公开(公告)号：US11889776B2

公开(公告)日：2024-01-30

申请号：US17356029

申请日：2021-06-23

申请人： Nuvoton Technology Corporation Japan

发明人： Ryutaro Yasuhara ,  Satoru Fujii ,  Takumi Mikawa ,  Atsushi Himeno ,  Kengo Nishio ,  Takehide Miyazaki ,  Hiroyuki Akinaga ,  Yasuhisa Naitoh ,  Hisashi Shima

IPC分类号： H10N70/00 ,  H10B63/00 ,  H10N70/20

CPC分类号： H10N70/828 ,  H10B63/20 ,  H10B63/30 ,  H10N70/24

摘要： A variable resistance non-volatile memory element includes first and second electrodes and a variable resistance layer between the electrodes. The layer has a resistance value reversibly variable based on an electrical signal. The layer includes a first variable resistance layer that includes an oxygen deficient first metal oxide containing a first metal element and oxygen, and a second variable resistance layer that includes a composite oxide containing the first metal element, a second metal element different from the first metal element, and oxygen, and having a different degree of oxygen deficiency from the first metal oxide. The composite oxide has a lower degree of oxygen deficiency than the first metal oxide. At room temperature, the composite oxide has a smaller oxygen diffusion coefficient than a second metal oxide containing the first metal element and oxygen, and having the degree of oxygen deficiency equal to that of the composite oxide.