公开(公告)号：US10121777B2

公开(公告)日：2018-11-06

申请号：US15275492

申请日：2016-09-26

Applicant: Novatek Microelectronics Corp.

Inventor： Chun-Yu Lin ,  Jie-Ting Chen ,  Ming-Dou Ker ,  Tzu-Chien Tzeng ,  Keko-Chun Liang ,  Ju-Lin Huang

IPC: H01L29/74 ,  H01L27/02 ,  H01L29/87 ,  H01L29/06

Abstract: A silicon controlled rectifier including a semiconductor substrate, first and second semiconductor wells, first and second semiconductor regions, third and fourth semiconductor regions and a silicide layer is provided. The first and the second semiconductor wells are formed in the semiconductor substrate. The first and the second semiconductor regions are respectively formed in the first and the second semiconductor wells in spaced apart relation. The third and the fourth semiconductor regions are respectively formed in the first and the second semiconductor wells. The silicide layer is formed on the third and the fourth semiconductor regions. The silicon controlled rectifier is at least suitable for high frequency circuit application. The silicon controlled rectifier has a relatively low trigger voltage, a relatively high electrostatic discharge level, and a relatively low capacitance.

公开(公告)号：US09780085B1

公开(公告)日：2017-10-03

申请号：US15373491

申请日：2016-12-09

Applicant: Novatek Microelectronics Corp.

Inventor： Rong-Kun Chang ,  Jie-Ting Chen ,  Chun-Yu Lin ,  Ming-Dou Ker ,  Tzu-Chien Tzeng ,  Ping-Chang Lin

IPC: H01L27/02 ,  H01L49/02

CPC classification number: H01L27/0292 ,  H01L23/60 ,  H01L27/0255 ,  H01L27/0262 ,  H01L27/0288 ,  H01L28/10 ,  H02H9/046

Abstract: An electronic static discharge protection apparatus provided. A plurality of ESD circuits serially coupled between a pad and a internal circuit, a first stage ESD circuit includes a ESD element directly coupled to the pad, and a last stage ESD circuit includes an inductive element directly coupled to the internal circuit, so as to improve electronic discharge protecting ability of the ESD protection apparatus and increase circuit operation bandwidth without signal loss attenuation.

公开(公告)号：US10476263B2

公开(公告)日：2019-11-12

申请号：US14985462

申请日：2015-12-31

Applicant: Novatek Microelectronics Corp.

Inventor： Tzu-Chien Tzeng ,  Jie-Ting Chen ,  Chun-Yu Lin ,  Ming-Dou Ker

IPC: H02H9/04

Abstract: An electrostatic discharge (ESD) protection device and an operation method of the ESD protection device are provided. The ESD protection device includes an ESD current rail, an ESD protection element string, and a bias circuit. A first end and a second end of the ESD protection element string are electrically connected to the ESD current rail and a signal pad, respectively. The ESD protection element string includes a first ESD protection element and a second ESD protection element that are serially connected. The bias circuit is electrically connected to the ESD protection element string to provide a bias voltage to a common connection node between the first ESD protection element and the second ESD protection element.

公开(公告)号：US20180159318A1

公开(公告)日：2018-06-07

申请号：US15372363

申请日：2016-12-07

Applicant: NOVATEK Microelectronics Corp.

Inventor： Jie-Ting Chen ,  Chun-Yu Lin ,  Ming-Dou Ker ,  Ju-Lin Huang ,  Tzu-Chiang Lin ,  Tzu-Chien Tzeng

IPC: H02H9/04 ,  H02H1/04

CPC classification number: H02H9/04 ,  H02H1/04 ,  H02H9/041

Abstract: A power rail clamp circuit is coupled between a system power supply and a ground for alleviating an electrostatic discharge effect. The power rail clamp circuit includes a first conduction circuit, a second conduction circuit, an AND gate module and a switch module. The AND gate module receives a first conduction signal generated by the first conduction circuit and a second conduction signal generated by the second conduction circuit to generate an enabling signal. The switch module conducts the power rail clamp circuit according to the enabling signal, to process an electrostatic discharge operation. The first conduction circuit is operated to prevent a high voltage value of the system power supply, and the second conduction circuit is operated to prevent a short initiation period of the system power supply.

公开(公告)号：US20170309612A1

公开(公告)日：2017-10-26

申请号：US15275492

申请日：2016-09-26

Applicant: Novatek Microelectronics Corp.

Inventor： Chun-Yu Lin ,  Jie-Ting Chen ,  Ming-Dou Ker ,  Tzu-Chien Tzeng ,  Keko-Chun Liang ,  Ju-Lin Huang

IPC: H01L27/02

CPC classification number: H01L27/0262 ,  H01L29/0649 ,  H01L29/87

Abstract: A silicon controlled rectifier including a semiconductor substrate, first and second semiconductor wells, first and second semiconductor regions, third and fourth semiconductor regions and a silicide layer is provided. The first and the second semiconductor wells are formed in the semiconductor substrate. The first and the second semiconductor regions are respectively formed in the first and the second semiconductor wells in spaced apart relation. The third and the fourth semiconductor regions are respectively formed in the first and the second semiconductor wells. The silicide layer is formed on the third and the fourth semiconductor regions. The silicon controlled rectifier is at least suitable for high frequency circuit application. The silicon controlled rectifier has a relatively low trigger voltage, a relatively high electrostatic discharge level, and a relatively low capacitance.

公开(公告)号：US20170194786A1

公开(公告)日：2017-07-06

申请号：US14985462

申请日：2015-12-31

Applicant: Novatek Microelectronics Corp.

Inventor： Tzu-Chien Tzeng ,  Jie-Ting Chen ,  Chun-Yu Lin ,  Ming-Dou Ker

IPC: H02H9/04

CPC classification number: H02H9/041 ,  H02H9/046

Abstract: An electrostatic discharge (ESD) protection device and an operation method of the ESD protection device are provided. The ESD protection device includes an ESD current rail, an ESD protection element string, and a bias circuit. A first end and a second end of the ESD protection element string are electrically connected to the ESD current rail and a signal pad, respectively. The ESD protection element string includes a first ESD protection element and a second ESD protection element that are serially connected. The bias circuit is electrically connected to the ESD protection element string to provide a bias voltage to a common connection node between the first ESD protection element and the second ESD protection element.