公开(公告)号：US20100252913A1

公开(公告)日：2010-10-07

申请号：US12818694

申请日：2010-06-18

申请人： Nobuhiko Hayashi ,  Takashi Kano

发明人： Nobuhiko Hayashi ,  Takashi Kano

IPC分类号： H01L29/20

CPC分类号： H01S5/32341 ,  H01L21/31608 ,  H01L33/007 ,  H01S5/0216 ,  H01S5/0217 ,  H01S2304/12

摘要： A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

摘要翻译： 在蓝宝石衬底上生长GaN层，在GaN层上形成SiO 2膜，然后使用外延横向生长在GaN层和SiO 2膜上生长包括MQW有源层的GaN半导体层。 通过蚀刻除去在SiO 2膜上的区域中的GaN基半导体层，然后在SiO 2膜上的GaN基半导体层的顶表面上形成ap电极，以将p电极连接到GaN基半导体层 涉及GaAs衬底上的欧姆电极。 n电极形成在GaN基半导体层的顶表面上。

公开(公告)号：US20090114941A1

公开(公告)日：2009-05-07

申请号：US12149960

申请日：2008-05-12

申请人： Nobuhiko Hayashi ,  Takashi Kano

发明人： Nobuhiko Hayashi ,  Takashi Kano

IPC分类号： H01L33/00 ,  H01L21/00 ,  H01L21/20 ,  H01L21/02

CPC分类号： H01S5/32341 ,  H01L21/31608 ,  H01L33/007 ,  H01S5/0216 ,  H01S5/0217 ,  H01S2304/12

摘要： A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

公开(公告)号：US20050145878A1

公开(公告)日：2005-07-07

申请号：US11054956

申请日：2005-02-11

申请人： Nobuhiko Hayashi ,  Takashi Kano

发明人： Nobuhiko Hayashi ,  Takashi Kano

IPC分类号： H01L21/316 ,  H01L33/00 ,  H01S5/02 ,  H01S5/323 ,  H01L29/22

CPC分类号： H01S5/32341 ,  H01L21/31608 ,  H01L33/007 ,  H01S5/0216 ,  H01S5/0217 ,  H01S2304/12

摘要： A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

摘要翻译： 在蓝宝石衬底上生长GaN层，在GaN层上形成SiO 2膜，然后在GaN层上生长包括MQW有源层的GaN半导体层，并且将SiO _{2 膜使用外延横向过度生长。 通过蚀刻除去GaN基半导体层，除了在SiO 2膜上的区域中，然后在SiO 2膜上的GaN基半导体层的顶表面上形成ap电极， / SUB>膜，将GaN基半导体层上的p电极连接到GaAs衬底上的欧姆电极。 n电极形成在GaN基半导体层的顶表面上。}

公开(公告)号：US07768030B2

公开(公告)日：2010-08-03

申请号：US12149960

申请日：2008-05-12

申请人： Nobuhiko Hayashi ,  Takashi Kano

发明人： Nobuhiko Hayashi ,  Takashi Kano

IPC分类号： H01L33/44

CPC分类号： H01S5/32341 ,  H01L21/31608 ,  H01L33/007 ,  H01S5/0216 ,  H01S5/0217 ,  H01S2304/12

摘要： A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

摘要翻译： 在蓝宝石衬底上生长GaN层，在GaN层上形成SiO 2膜，然后使用外延横向生长在GaN层和SiO 2膜上生长包括MQW有源层的GaN半导体层。 通过蚀刻除去在SiO 2膜上的区域中的GaN基半导体层，然后在SiO 2膜上的GaN基半导体层的顶表面上形成ap电极，以将p电极连接到GaN基半导体层 涉及GaAs衬底上的欧姆电极。 n电极形成在GaN基半导体层的顶表面上。

公开(公告)号：US20080248603A1

公开(公告)日：2008-10-09

申请号：US12155804

申请日：2008-06-10

申请人： Tatsuya Kunisato ,  Hiroki Ohbo ,  Nobuhiko Hayashi ,  Takashi Kano

发明人： Tatsuya Kunisato ,  Hiroki Ohbo ,  Nobuhiko Hayashi ,  Takashi Kano

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L33/0075

摘要： A method of preparing a nitride semiconductor capable of forming a nitride-based semiconductor layer having a small number of dislocations as well as a small number of crystal defects resulting from desorption with excellent crystallinity on the upper surface of a substrate through a small number of growth steps is proposed. The method of preparing a nitride-based semiconductor comprises steps of forming a mask layer on the upper surface of a substrate to partially expose the upper surface of the substrate, forming a buffer layer on the exposed part of the upper surface of the substrate and the upper surface of the mask layer and thereafter growing a nitride-based semiconductor layer. Thus, the outermost growth surface of the nitride-based semiconductor layer laterally grown on the mask layer does not come into contact with the mask layer. Therefore, desorption hardly takes place from the outermost growth surface of the nitride-based semiconductor layer, whereby a nitride-based semiconductor layer having a small number of defects is formed. Further, the mask layer is directly formed on the substrate, whereby the number of growth steps for the nitride-based semiconductor layer is reduced.

摘要翻译： 一种制备氮化物半导体的方法，所述氮化物半导体能够通过少量的生长形成具有少量位错的氮化物基半导体层以及在基板的上表面上具有优异结晶度的解吸所产生的少量晶体缺陷 提出步骤。 制备氮化物基半导体的方法包括以下步骤：在衬底的上表面上形成掩模层以部分地暴露衬底的上表面，在衬底的上表面的暴露部分上形成缓冲层， 掩模层的上表面，然后生长氮化物基半导体层。 因此，在掩模层上横向生长的氮化物基半导体层的最外生长表面不与掩模层接触。 因此，从氮化物系半导体层的最外侧生长面几乎不发生解吸，从而形成缺陷少的氮化物系半导体层。 此外，掩模层直接形成在基板上，由此氮化物基半导体层的生长步骤的数量减少。

公开(公告)号：US07388234B2

公开(公告)日：2008-06-17

申请号：US11054956

申请日：2005-02-11

申请人： Nobuhiko Hayashi ,  Takashi Kano

发明人： Nobuhiko Hayashi ,  Takashi Kano

IPC分类号： H01L29/201 ,  H01L33/00

CPC分类号： H01S5/32341 ,  H01L21/31608 ,  H01L33/007 ,  H01S5/0216 ,  H01S5/0217 ,  H01S2304/12

摘要： A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

摘要翻译： 在蓝宝石衬底上生长GaN层，在GaN层上形成SiO 2膜，然后在GaN层上生长包括MQW有源层的GaN半导体层，并且将SiO _{2 膜使用外延横向过度生长。 通过蚀刻除去GaN基半导体层，除了在SiO 2膜上的区域中，然后在SiO 2膜上的GaN基半导体层的顶表面上形成ap电极， / SUB>膜，将GaN基半导体层上的p电极连接到GaAs衬底上的欧姆电极。 n电极形成在GaN基半导体层的顶表面上。}

公开(公告)号：US06872982B2

公开(公告)日：2005-03-29

申请号：US09955600

申请日：2001-09-19

申请人： Nobuhiko Hayashi ,  Takashi Kano

发明人： Nobuhiko Hayashi ,  Takashi Kano

IPC分类号： H01L21/316 ,  H01L33/00 ,  H01S5/02 ,  H01S5/323 ,  H01L27/15

CPC分类号： H01S5/32341 ,  H01L21/31608 ,  H01L33/007 ,  H01S5/0216 ,  H01S5/0217 ,  H01S2304/12

摘要： A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

摘要翻译： 在蓝宝石衬底上生长GaN层，在GaN层上形成SiO 2膜，然后使用外延横向生长在GaN层和SiO 2膜上生长包括MQW有源层的GaN半导体层。 通过蚀刻除去在SiO 2膜上的区域中的GaN基半导体层，然后在SiO 2膜上的GaN基半导体层的顶表面上形成ap电极，以将p电极连接到GaN基半导体层 涉及GaAs衬底上的欧姆电极。 n电极形成在GaN基半导体层的顶表面上。

公开(公告)号：US06821807B2

公开(公告)日：2004-11-23

申请号：US09941982

申请日：2001-08-30

申请人： Takashi Kano ,  Hiroki Ohbo ,  Nobuhiko Hayashi

发明人： Takashi Kano ,  Hiroki Ohbo ,  Nobuhiko Hayashi

IPC分类号： H01L2120

CPC分类号： H01S5/32341 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01S5/0213 ,  H01S2304/04

摘要： In the manufacture of a semiconductor laser device, a low temperature buffer layer is grown on a sapphire substrate at a growth rate of 25 to 30 Å/sec. On the low temperature buffer layer, an n-GaN layer, a anti-crack layer, an n-cladding layer, an n-guide layer, an MQW active layer, a p-carrier blocking layer, a p-guide layer, a p-cladding layer and a p-contact layer are grown in this order. The growth of the low temperature buffer layer at the high growth rate allows a good low temperature buffer layer to be stably provided with good reproducibility. Thus, good crystallinity and electrical characteristics can stably be provided in the above layers.

摘要翻译： 在半导体激光器件的制造中，在蓝宝石衬底上以25〜30 /秒的生长速度生长低温缓冲层。 在低温缓冲层上，n-GaN层，抗裂纹层，n包层，n引导层，MQW有源层，p载流子阻挡层，p引导层， p覆层和p-接触层按此顺序生长。 低温缓冲层在高生长速率下的生长允许良好的低温缓冲层稳定地提供良好的再现性。 因此，在上述层中可以稳定地提供良好的结晶度和电特性。

公开(公告)号：US20060011946A1

公开(公告)日：2006-01-19

申请号：US10506100

申请日：2003-02-28

申请人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura ,  Masayuki Shouno ,  Yuuji Hishida ,  Keiichi Yodoshi ,  Daijiro Inoue ,  Takashi Kano ,  Nobuhiko Hayashi

发明人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura ,  Masayuki Shouno ,  Yuuji Hishida ,  Keiichi Yodoshi ,  Daijiro Inoue ,  Takashi Kano ,  Nobuhiko Hayashi

IPC分类号： H01L27/10

CPC分类号： H01S5/32341 ,  H01S5/22 ,  H01S5/2219

摘要： A nitride semiconductor laser element capable of controlling the lateral confinement of light with a good reproducibility, the nitride semiconductor element comprising an n-type cladding layer (3), an MQW light emitting layer (4) formed on the cladding layer (3), a p-type cladding layer (5) and a p-type contact layer (6) formed on the light emitting layer (4), and an ion implantation light absorbing layer (7) formed, by introducing carbon, in regions other than a current passing region (8) in the cladding layer (5) and the contact layer (6).

摘要翻译： 一种氮化物半导体激光元件，其能够以良好的再现性控制光的横向限制，所述氮化物半导体元件包括n型包覆层（3），形成在所述包层（3）上的MQW发光层（4） 形成在发光层（4）上的p型覆盖层（5）和p型接触层（6），以及通过引入碳而形成的离子注入光吸收层（7） 包覆层（5）和接触层（6）中的电流通过区域（8）。

公开(公告)号：US06914922B2

公开(公告)日：2005-07-05

申请号：US09898043

申请日：2001-07-05

申请人： Nobuhiko Hayashi ,  Takenori Goto ,  Takashi Kano ,  Yasuhiko Nomura

发明人： Nobuhiko Hayashi ,  Takenori Goto ,  Takashi Kano ,  Yasuhiko Nomura

IPC分类号： H01L33/14 ,  H01L33/32 ,  H01S5/20 ,  H01S5/22 ,  H01S5/323 ,  H01S5/00 ,  H01L29/06 ,  H01L33/00

CPC分类号： H01S5/32341 ,  H01L33/14 ,  H01L33/32 ,  H01S5/2004 ,  H01S5/2218 ,  H01S5/2222 ,  H01S2301/18

摘要： A semiconductor laser device is constructed by stacking a buffer layer, an undoped GaN layer, an n-GaN contact layer, an n-InGaN crack preventing layer, an n-AlGaN cladding layer, a light emitting layer, a p-AlGaN cladding layer, and a p-GaN contact layer in this order. A ridge portion comprising the p-GaN contact layer and the p-AlGaN cladding layer is formed, and the thickness of the p-AlGaN cladding layer in the ridge portion is less than 0.3 μm.

摘要翻译： 半导体激光器件通过堆叠缓冲层，未掺杂的GaN层，n-GaN接触层，n-InGaN防裂层，n-AlGaN包层，发光层，p-AlGaN包层 ，和p-GaN接触层。 形成包含p-GaN接触层和p-AlGaN包覆层的脊部，并且脊部中的p-AlGaN包层的厚度小于0.3μm。