发明申请
- 专利标题： Semiconductor device and method of fabricating the same and method of forming nitride based semiconductor layer
- 专利标题（中）： 半导体器件及其制造方法以及形成氮化物基半导体层的方法
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申请号： US11054956申请日： 2005-02-11
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公开(公告)号： US20050145878A1公开(公告)日： 2005-07-07
- 发明人: Nobuhiko Hayashi , Takashi Kano
- 申请人： Nobuhiko Hayashi , Takashi Kano
- 专利权人： SANYO ELECTRIC CO., LTD.
- 当前专利权人： SANYO ELECTRIC CO., LTD.
- 优先权： JP10-213970 19980729
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L33/00 ; H01S5/02 ; H01S5/323 ; H01L29/22
摘要：
A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.
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