Wide-angle pupil relay for cellphone-based fundus camera

    公开(公告)号:US11717161B2

    公开(公告)日:2023-08-08

    申请号:US16288096

    申请日:2019-02-27

    申请人: NIKON CORPORATION

    摘要: An optical imaging system includes a first lens system housed in a body of a mobile telecommunication device, the first lens system having a first optical axis, a first entrance pupil fixed in space in a reference plane associated with said body, and a first focal length; and an optical telescope providing a diffraction-limited imaging within a spectral range from at least 486 nm to at least 656 nm. The optical imaging system is configured to image, when the optical telescope is inserted between the first lens system and an entrance pupil of a visual system of an eye (EPE), the EPE onto the first entrance pupil and vice versa with a substantially unit magnification.

    Catadioptric unit-magnification afocal pupil relay and optical imaging system employing the same

    公开(公告)号:US11317798B2

    公开(公告)日:2022-05-03

    申请号:US16294050

    申请日:2019-03-06

    申请人: NIKON CORPORATION

    IPC分类号: A61B3/10 A61B3/12

    摘要: An optical system configured for imaging an object with the use of two independently-scanning reflectors, the optical system having an optical axis and including: first and second scanning reflectors, the first scanning reflector being configured to scan a beam of light incident thereon in a first plane, the second scanning reflector being configured to scan a beam of light incident thereon in a second plane, and the first and second planes being transverse to one another; and a catadioptric afocal relay system disposed along the optical axis in optical communication with, and between, the first and second scanning reflectors, the catadioptric afocal relay system being configured to image one of the first or second scanning reflectors onto another of the first or second scanning reflectors, in light propagating along the optical axis, with a unit magnification, and the catadioptric afocal relay system including only one reflector.

    Extreme ultraviolet lithography system that utilizes pattern stitching

    公开(公告)号:US10295911B2

    公开(公告)日:2019-05-21

    申请号:US15629353

    申请日:2017-06-21

    申请人: NIKON CORPORATION

    IPC分类号: G03F7/20

    摘要: An extreme ultraviolet lithography system (10) that creates a pattern (230) having a plurality of densely packed parallel lines (232) on a workpiece (22) includes a patterning element (16); an EUV illumination system (12) that directs an extreme ultraviolet beam (13A) at the patterning element (16); a projection optical assembly (18) that directs the extreme ultraviolet beam diffracted off of the patterning element (16) at the workpiece (22); and a pattern blind assembly (26) positioned in a beam path (55) of the extreme ultraviolet beam (13A). The pattern blind assembly (26) shapes the extreme ultraviolet beam (13A) so that an exposure field (28) on the workpiece (22) has a polygonal shape.

    Methods and devices for reducing errors in Goos-Hänchen corrections of displacement data
    5.
    发明授权
    Methods and devices for reducing errors in Goos-Hänchen corrections of displacement data 有权
    减少Goos-Hänchen位移数据校正误差的方法和装置

    公开(公告)号:US09335159B2

    公开(公告)日:2016-05-10

    申请号:US14462910

    申请日:2014-08-19

    申请人: Nikon Corporation

    摘要: An exemplary method involves, in a system comprising a tool that performs a task on a workpiece, a method for determining displacement of the workpiece relative to the tool. Respective displacements of loci of at least a region of the workpiece are mapped using a Goos-Hänchen-insensitive (GH-insensitive) displacement sensor to produce a first set of physical displacement data for the region. Also mapped are respective displacements, from the tool, of the loci using a GH sensitive sensor to produce a second set of optical displacement data for the region. Goodness of fit (GOF) is determined of the second set of data with the first set. According to the GOF, respective GH-correction (GHC) coefficients are determined for at least one locus of the region. When measuring displacement of the at least one locus in the region relative to the tool, the respective GHC coefficient is applied to the measured displacement to reduce an error that otherwise would be present in the measured displacement due to a GH effect.

    摘要翻译: 一种示例性方法涉及在包括在工件上执行任务的工具的系统中的一种用于确定工件相对于工具的位移的方法。 使用Goos-Hänchen不敏感(GH不敏感)位移传感器映射工件的至少一个区域的轨迹的相对位移,以产生该区域的第一组物理位移数据。 还映射了来自使用GH敏感传感器的轨迹的位置的相应位移,以产生该区域的第二组光学位移数据。 第一组数据的第二组数据确定适合度(GOF)。 根据GOF,针对该区域的至少一个轨迹确定各自的GH校正(GHC)系数。 当测量区域中的至少一个轨迹相对于工具的位移时,将相应的GHC系数应用于测量的位移,以减少否则将由于GH效应而在测量的位移中存在的误差。

    Optical objective for operation in EUV spectral region

    公开(公告)号:US11934105B2

    公开(公告)日:2024-03-19

    申请号:US16655932

    申请日:2019-10-17

    申请人: Nikon Corporation

    IPC分类号: G03F7/20 G03F7/00 G02B17/06

    摘要: A catoptric system having a reference axis and first, second, and third reflectors. The first reflector contains a pattern-source carrying a substantially one-dimensional pattern. A combination of the second and third reflectors is configured to form an optical image of the pattern, with a demagnification coefficient N>1 in extreme UV light, and with only two beams of light that have originated at the first reflector as a result of irradiation of the first reflector with light incident upon it. An exposure apparatus employing the catoptric system and method of device manufacturing with the use of the exposure apparatus.

    ILLUMINATION SYSTEM WITH FLAT 1D-PATTERNED MASK FOR USE IN EUV-EXPOSURE TOOL

    公开(公告)号:US20200057373A1

    公开(公告)日:2020-02-20

    申请号:US16664478

    申请日:2019-10-25

    申请人: Nikon Corporation

    IPC分类号: G03F7/20 G02B17/06

    摘要: A catoptric system having a reference axis and including a reflective pattern-source (carrying a substantially one-dimensional pattern) and a combination of only three optical components disposed sequentially to transfer EUV radiation incident the first optical component onto the pattern-source. The combination is disposed in a fixed spatial and optical relationship with respect to the pattern-source, and represents an illumination unit (IU) of a 1D EUV exposure tool that additionally includes a projection optic sub-system configured to form an optical image of the pattern-source on an image plane with the use of only two beams of radiation. These only two beams of radiation originate at the pattern-source from the EUV radiation transferred onto the pattern-source.

    EXTREME ULTRAVIOLET LITHOGRAPHY SYSTEM THAT UTILIZES PATTERN STITCHING

    公开(公告)号:US20170336720A1

    公开(公告)日:2017-11-23

    申请号:US15629353

    申请日:2017-06-21

    申请人: NIKON CORPORATION

    IPC分类号: G03F7/20

    摘要: An extreme ultraviolet lithography system (10) that creates a pattern (230) having a plurality of densely packed parallel lines (232) on a workpiece (22) includes a patterning element (16); an EUV illumination system (12) that directs an extreme ultraviolet beam (13A) at the patterning element (16); a projection optical assembly (18) that directs the extreme ultraviolet beam diffracted off of the patterning element (16) at the workpiece (22); and a pattern blind assembly (26) positioned in a beam path (55) of the extreme ultraviolet beam (13A). The pattern blind assembly (26) shapes the extreme ultraviolet beam (13A) so that an exposure field (28) on the workpiece (22) has a polygonal shape.