公开(公告)号：US09947821B2

公开(公告)日：2018-04-17

申请号：US14905710

申请日：2014-07-24

申请人： NewSouth Innovations Pty Limited

发明人： Brett Jason Hallam ,  Matthew Bruce Edwards ,  Stuart Ross Wenham ,  Phillip George Hamer ,  Catherine Emily Chan ,  Chee Mun Chong ,  Pei Hsuan Lu ,  Ly Mai ,  Li Hui Song ,  Adeline Sugianto ,  Alison Maree Wenham ,  Guang Qi Xu

IPC分类号： H01L21/324 ,  H01L31/068 ,  H01L21/30 ,  H01L21/22 ,  H01L21/225 ,  H01L31/18 ,  H01L31/0288 ,  H01L31/0352

CPC分类号： H01L31/068 ,  H01L21/2225 ,  H01L21/2255 ,  H01L21/3003 ,  H01L21/324 ,  H01L31/0288 ,  H01L31/035272 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  H01L31/1876 ,  Y02E10/547 ,  Y02P70/521

摘要： A silicon device, has a plurality of crystalline silicon regions. One crystalline silicon region is a doped crystalline silicon region. Deactivating some or all of the dopant atoms in the doped crystalline silicon region is achieved by introducing hydrogen atoms into the doped 5 crystalline silicon region, whereby the hydrogen coulombicly bonds with some or all of the dopant atoms to deactivate the respective dopant atoms. Deactivated dopant atoms may be reactivated by heating and illuminating the doped crystalline silicon region to break at least some of the dopant-hydrogen bonds while maintaining conditions to create a high concentration of neutral hydrogen atoms whereby 10 some of the hydrogen atoms diffuse from the doped crystalline silicon region without rebinding to the dopant atoms.

公开(公告)号：US09824897B2

公开(公告)日：2017-11-21

申请号：US14905711

申请日：2014-07-24

申请人： NewSouth Innovations Pty Limited

发明人： Brett Jason Hallam ,  Matthew Bruce Edwards ,  Stuart Ross Wenham ,  Phillip George Hamer ,  Catherine Emily Chan ,  Chee Mun Chong ,  Pei Hsuan Lu ,  Ly Mai ,  Li Hui Song ,  Adeline Sugianto ,  Alison Maree Wenham ,  Guang Qi Xu

IPC分类号： H01L31/048 ,  H01L21/322 ,  H01L23/31 ,  H01L31/068 ,  H01L21/225 ,  H01L21/324 ,  H01L21/56 ,  B32B17/10 ,  H01L31/18

CPC分类号： H01L21/3223 ,  B32B17/10036 ,  B32B17/10788 ,  H01L21/2253 ,  H01L21/324 ,  H01L21/56 ,  H01L23/3107 ,  H01L31/048 ,  H01L31/0488 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

摘要： A method is provided for the processing of a device having a crystalline silicon region containing an internal hydrogen source. The method comprises: i) applying encapsulating material to each of the front and rear surfaces of the device to form a lamination; ii) applying pressure to the lamination and heating the lamination to bond the encapsulating material to the device; and iii) cooling the device, where the heating step or cooling step or both are completed under illumination.

公开(公告)号：US10910509B2

公开(公告)日：2021-02-02

申请号：US16461864

申请日：2017-11-22

申请人： NEWSOUTH INNOVATIONS PTY LIMITED

发明人： Alison Ciesla ,  Brett Jason Hallam ,  Catherine Emily Chan ,  Chee Mun Chong ,  Daniel Chen ,  Darren Bagnall ,  David Neil Payne ,  Ly Mai ,  Malcolm David Abbott ,  Moonyong Kim ,  Ran Chen ,  Stuart Ross Wenham ,  Tsun Hang Fung ,  Zhengrong Shi

IPC分类号： H01L31/18 ,  H01L31/0288

摘要： The present disclosure is directed to a method for processing a silicon wafer that allows improving performance by exploiting the properties of crystallographic imperfections. The method comprises the steps of: forming a silicon layer with crystallographic imperfections in the proximity of a surface of the silicon; exposing at least a portion of the device to hydrogen atoms in a manner such that hydrogen atoms migrate towards the region with crystallographic imperfections and into the silicon along the crystallographic imperfections; and controlling the charge state of hydrogen atoms located at the crystallographic imperfections to be positive when the imperfections are in a p-type region of the wafer; and negative when the imperfections are at an n-type region of the wafer by thermally treating the silicon while exposing the silicon to an illumination intensity of less than 10 mW/cm2.

公开(公告)号：US10199523B2

公开(公告)日：2019-02-05

申请号：US14749755

申请日：2015-06-25

申请人： NewSouth Innovations Pty Limited ,  Suntech Power International Ltd.

发明人： Alison Maree Wenham ,  Ziv Hameiri ,  Jing Jia Ji ,  Ly Mai ,  Zhengrong Shi ,  Budi Tjahjono ,  Stuart Ross Wenham

IPC分类号： H01L21/225 ,  H01L31/068 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/028 ,  H01L21/268

摘要： A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor.The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating. The anti-reflection coating is located on a light receiving surface of the semiconductor material structure and comprises a thin layer of thermal expansion mismatch correction material having a thermal expansion coefficient less than or equal to that of the semiconductor material, to provide thermal expansion coefficient mismatch correction. An anti-reflection layer is provided having a refractive index and thickness selected to match the semiconductor material structure so as to give good overall antireflection properties to the solar cell.

公开(公告)号：US20150132881A1

公开(公告)日：2015-05-14

申请号：US14560973

申请日：2014-12-04

申请人： NewSouth Innovations Pty Limited

发明人： STUART ROSS WENHAM ,  Phillip George Hamer ,  Brett Jason Hallam ,  Adeline Sugianto ,  Catherine Emily Chan ,  Lihui Song ,  Pei Hsuan Lu ,  Alison Maree Wenham ,  Ly Mai ,  Chee Mun Chong ,  GuangQi Xu ,  Matthew Edwards

IPC分类号： H01L31/18

CPC分类号： H01L31/1868 ,  H01L21/3003 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67706 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  Y02B10/10 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction.The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) Providing one or more hydrogen sources accessible by each surface of the device; and iii) Heating the device, or a local region of the device to at least 40° C. while simultaneously illuminating at least some and/or advantageously all of the device with at least one light source whereby the cumulative power of all the incident photons with sufficient energy to generate electron hole pairs within the silicon (in other words photons with energy levels above the bandgap of silicon of 1.12 eV) is at least 20 mW/cm2

公开(公告)号：US09847443B2

公开(公告)日：2017-12-19

申请号：US15204813

申请日：2016-07-07

申请人： NewSouth Innovations Pty Limited

发明人： Stuart Ross Wenham ,  Phillip George Hamer ,  Brett Jason Hallam ,  Adeline Sugianto ,  Catherine Emily Chan ,  Lihui Song ,  Pei Hsuan Lu ,  Alison Maree Wenham ,  Ly Mai ,  Chee Mun Chong ,  GuangQi Xu ,  Matthew Edwards

IPC分类号： H01L21/00 ,  H01L31/18 ,  H01L21/30 ,  H01L21/67 ,  H01L21/677

CPC分类号： H01L31/1868 ,  H01L21/3003 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67706 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  Y02B10/10 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction.The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) Providing one or more hydrogen sources accessible by each surface of the device; and iii) Heating the device, or a local region of the device to at least 40° C. while simultaneously illuminating at least some and/or advantageously all of the device with at least one light source whereby the cumulative power of all the incident photons with sufficient energy to generate electron hole pairs within the silicon (in other words photons with energy levels above the bandgap of silicon of 1.12 eV) is at least 20 mW/cm2.

公开(公告)号：US20160372625A1

公开(公告)日：2016-12-22

申请号：US15204813

申请日：2016-07-07

申请人： NewSouth Innovations Pty Limited

发明人： Stuart Ross Wenham ,  Phillip George Hamer ,  Brett Jason Hallam ,  Adeline Sugianto ,  Catherine Emily Chan ,  Lihui Song ,  Pei Hsuan Lu ,  Alison Maree Wenham ,  Ly Mai ,  Chee Mun Chong ,  GuangQi Xu ,  Matthew Edwards

IPC分类号： H01L31/18 ,  H01L21/677 ,  H01L21/67

CPC分类号： H01L31/1868 ,  H01L21/3003 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67706 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  Y02B10/10 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction.The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) Providing one or more hydrogen sources accessible by each surface of the device; and iii) Heating the device, or a local region of the device to at least 40° C. while simultaneously illuminating at least some and/or advantageously all of the device with at least one light source whereby the cumulative power of all the incident photons with sufficient energy to generate electron hole pairs within the silicon (in other words photons with energy levels above the bandgap of silicon of 1.12 eV) is at least 20 mW/cm2

摘要翻译： 提供了一种硅光电接合器件的氢化方法，该硅光电转换器件包括形成至少一个p-n结的p型硅半导体材料和n型硅半导体材料。 该方法包括：i）确保氢必须扩散的任何硅表面磷扩散层的峰值掺杂浓度为1×10 20原子/ cm 3或更小，并且硅必须扩散的硅表面硼扩散层的峰值掺杂浓度为1×10 19 原子/ cm 3以下; ii）提供可由设备的每个表面接近的一个或多个氢源; 以及iii）将所述装置或所述装置的局部区域加热到至少100℃，随后冷却所述装置，同时用至少一个光源照射所述装置的至少一些和/或有利地全部，由此累积功率 所有入射光子具有足够的能量以在硅内产生电子空穴对（换句话说，具有高于1.12eV的硅的带隙的能级的光子）为至少20mW / cm 2

公开(公告)号：US09190556B2

公开(公告)日：2015-11-17

申请号：US14402654

申请日：2013-05-20

申请人： NewSouth Innovations Pty Limited

发明人： Stuart Ross Wenham ,  Phillip George Hamer ,  Brett Jason Hallam ,  Adeline Sugianto ,  Catherine Emily Chan ,  Lihui Song ,  Pei Hsuan Lu ,  Alison Maree Wenham ,  Ly Mai ,  Chee Mun Chong ,  GuangQi Xu ,  Matthew Edwards

IPC分类号： H01L21/00 ,  H01L31/18 ,  H01L21/30

CPC分类号： H01L31/1868 ,  H01L21/3003 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67706 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  Y02B10/10 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction.The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) Providing one or more hydrogen sources accessible by each surface of the device; and iii) Heating the device, or a local region of the device to at least 40° C. while simultaneously illuminating at least some and/or advantageously all of the device with at least one light source whereby the cumulative power of all the incident photons with sufficient energy to generate electron hole pairs within the silicon (in other words photons with energy levels above the bandgap of silicon of 1.12 eV) is at least 20 mW/cm2.

摘要翻译： 提供了一种硅光电接合器件的氢化方法，该硅光电转换器件包括形成至少一个p-n结的p型硅半导体材料和n型硅半导体材料。 该方法包括：i）确保氢必须扩散的任何硅表面磷扩散层的峰值掺杂浓度为1×1020原子/ cm3或更小，并且必须扩散氢的硅表面硼扩散层的峰值掺杂浓度为1× 1019原子/ cm3以下; ii）提供可由设备的每个表面接近的一个或多个氢源; 以及iii）将所述装置或所述装置的局部区域加热至少40℃，同时用至少一个光源同时照射所述装置的至少一些和/或有利地全部，由此所有入射的光子的累积功率 具有足够的能量以在硅内产生电子空穴对（换句话说，具有高于1.12eV的硅的带隙的能级的光子）为至少20mW / cm 2。

公开(公告)号：US11031520B2

公开(公告)日：2021-06-08

申请号：US16461852

申请日：2017-11-22

申请人： NEWSOUTH INNOVATIONS PTY LIMITED

发明人： Stuart Ross Wenham ,  Alison Ciesla ,  Darren Bagnall ,  Ran Chen ,  Malcolm David Abbott ,  Brett Jason Hallam ,  Catherine Emily Chan ,  Chee Mun Chong ,  Daniel Chen ,  David Neil Payne ,  Ly Mai ,  Moonyong Kim ,  Tsun Hang Fung ,  Zhengrong Shi

IPC分类号： H01L31/18 ,  H01L31/0288

摘要： The present disclosure provides methodologies for manufacturing photovoltaic devices. In particular, the disclosure relates to the use of hydrogen during manufacturing of photovoltaic devices for passivating defects in the silicon and addressing light-induced degradation. The methodologies in the present disclosures take advantage of generation and manipulation of hydrogen in the neutral or charged state to optimise defect passivation. Some of the methodologies disclose use thermal treatments, illumination with sub-bandgap photons, electric fields or defects in the silicon to control the state of charge or hydrogen, move hydrogen to different locations in the device or retain hydrogen at specific locations.

公开(公告)号：US09412897B2

公开(公告)日：2016-08-09

申请号：US14560973

申请日：2014-12-04

申请人： NewSouth Innovations Pty Limited

发明人： Stuart Ross Wenham ,  Phillip George Hamer ,  Brett Jason Hallam ,  Adeline Sugianto ,  Catherine Emily Chan ,  Lihui Song ,  Pei Hsuan Lu ,  Alison Maree Wenham ,  Ly Mai ,  Chee Mun Chong ,  GuangQi Xu ,  Matthew Edwards

IPC分类号： H01L21/00 ,  H01L31/18 ,  H01L21/30

CPC分类号： H01L31/1868 ,  H01L21/3003 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67706 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  Y02B10/10 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction. The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) providing one or more hydrogen sources accessible by each surface of the device; and iii) heating the device, or a local region of the device to at least 40° C. while simultaneously illuminating at least some and/or advantageously all of the device with at least one light source whereby the cumulative power of all the incident photons with sufficient energy to generate electron hole pairs within the silicon (in other words photons with energy levels above the bandgap of silicon of 1.12 eV) is at least 20 mW/cm2.

摘要翻译： 提供了一种硅光电接合器件的氢化方法，该硅光电转换器件包括形成至少一个p-n结的p型硅半导体材料和n型硅半导体材料。 该方法包括：i）确保氢必须扩散的任何硅表面磷扩散层的峰值掺杂浓度为1×1020原子/ cm3或更小，并且必须扩散氢的硅表面硼扩散层的峰值掺杂浓度为1× 1019原子/ cm3以下; ii）提供可由所述装置的每个表面接近的一个或多个氢源; 以及iii）将所述装置或所述装置的局部区域加热至少40℃，同时用至少一个光源照射所述装置的至少一些和/或有利地全部，由此所有入射光子的累积功率 具有足够的能量以在硅内产生电子空穴对（换句话说，具有高于1.12eV的硅的带隙的能级的光子）为至少20mW / cm 2。