公开(公告)号：US20150132881A1

公开(公告)日：2015-05-14

申请号：US14560973

申请日：2014-12-04

申请人： NewSouth Innovations Pty Limited

发明人： STUART ROSS WENHAM ,  Phillip George Hamer ,  Brett Jason Hallam ,  Adeline Sugianto ,  Catherine Emily Chan ,  Lihui Song ,  Pei Hsuan Lu ,  Alison Maree Wenham ,  Ly Mai ,  Chee Mun Chong ,  GuangQi Xu ,  Matthew Edwards

IPC分类号： H01L31/18

CPC分类号： H01L31/1868 ,  H01L21/3003 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67706 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  Y02B10/10 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction.The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) Providing one or more hydrogen sources accessible by each surface of the device; and iii) Heating the device, or a local region of the device to at least 40° C. while simultaneously illuminating at least some and/or advantageously all of the device with at least one light source whereby the cumulative power of all the incident photons with sufficient energy to generate electron hole pairs within the silicon (in other words photons with energy levels above the bandgap of silicon of 1.12 eV) is at least 20 mW/cm2

公开(公告)号：US09412897B2

公开(公告)日：2016-08-09

申请号：US14560973

申请日：2014-12-04

申请人： NewSouth Innovations Pty Limited

发明人： Stuart Ross Wenham ,  Phillip George Hamer ,  Brett Jason Hallam ,  Adeline Sugianto ,  Catherine Emily Chan ,  Lihui Song ,  Pei Hsuan Lu ,  Alison Maree Wenham ,  Ly Mai ,  Chee Mun Chong ,  GuangQi Xu ,  Matthew Edwards

IPC分类号： H01L21/00 ,  H01L31/18 ,  H01L21/30

CPC分类号： H01L31/1868 ,  H01L21/3003 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67706 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  Y02B10/10 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction. The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) providing one or more hydrogen sources accessible by each surface of the device; and iii) heating the device, or a local region of the device to at least 40° C. while simultaneously illuminating at least some and/or advantageously all of the device with at least one light source whereby the cumulative power of all the incident photons with sufficient energy to generate electron hole pairs within the silicon (in other words photons with energy levels above the bandgap of silicon of 1.12 eV) is at least 20 mW/cm2.

摘要翻译： 提供了一种硅光电接合器件的氢化方法，该硅光电转换器件包括形成至少一个p-n结的p型硅半导体材料和n型硅半导体材料。 该方法包括：i）确保氢必须扩散的任何硅表面磷扩散层的峰值掺杂浓度为1×1020原子/ cm3或更小，并且必须扩散氢的硅表面硼扩散层的峰值掺杂浓度为1× 1019原子/ cm3以下; ii）提供可由所述装置的每个表面接近的一个或多个氢源; 以及iii）将所述装置或所述装置的局部区域加热至少40℃，同时用至少一个光源照射所述装置的至少一些和/或有利地全部，由此所有入射光子的累积功率 具有足够的能量以在硅内产生电子空穴对（换句话说，具有高于1.12eV的硅的带隙的能级的光子）为至少20mW / cm 2。

公开(公告)号：US20150111333A1

公开(公告)日：2015-04-23

申请号：US14402654

申请日：2013-05-20

申请人： NewSouth Innovations Pty Limited

发明人： Stuart Ross Wenham ,  Phillip George Hamer ,  Brett Jason Hallam ,  Adeline Sugianto ,  Catherine Emily Chan ,  Lihui Song ,  Pei Hsuan Lu ,  Alison Maree Wenham ,  Ly Mai ,  Chee Mun Chong ,  GuangQi Xu ,  Matthew Edwards

IPC分类号： H01L31/18

CPC分类号： H01L31/1868 ,  H01L21/3003 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67706 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  Y02B10/10 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction.The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) Providing one or more hydrogen sources accessible by each surface of the device; and iii) Heating the device, or a local region of the device to at least 40° C. while simultaneously illuminating at least some and/or advantageously all of the device with at least one light source whereby the cumulative power of all the incident photons with sufficient energy to generate electron hole pairs within the silicon (in other words photons with energy levels above the bandgap of silicon of 1.12 eV) is at least 20 mW/cm2

摘要翻译： 提供了一种硅光电接合器件的氢化方法，该硅光电转换器件包括形成至少一个p-n结的p型硅半导体材料和n型硅半导体材料。 该方法包括：i）确保氢必须扩散的任何硅表面磷扩散层的峰值掺杂浓度为1×1020原子/ cm3或更小，并且必须扩散氢的硅表面硼扩散层的峰值掺杂浓度为1× 1019原子/ cm3以下; ii）提供可由设备的每个表面接近的一个或多个氢源; 以及iii）将所述装置或所述装置的局部区域加热至少40℃，同时用至少一个光源同时照射所述装置的至少一些和/或有利地全部，由此所有入射的光子的累积功率 具有足够的能量以在硅内产生电子空穴对（换句话说，具有高于1.12eV的硅的带隙的能级的光子）为至少20mW / cm 2

公开(公告)号：US09847443B2

公开(公告)日：2017-12-19

申请号：US15204813

申请日：2016-07-07

申请人： NewSouth Innovations Pty Limited

发明人： Stuart Ross Wenham ,  Phillip George Hamer ,  Brett Jason Hallam ,  Adeline Sugianto ,  Catherine Emily Chan ,  Lihui Song ,  Pei Hsuan Lu ,  Alison Maree Wenham ,  Ly Mai ,  Chee Mun Chong ,  GuangQi Xu ,  Matthew Edwards

IPC分类号： H01L21/00 ,  H01L31/18 ,  H01L21/30 ,  H01L21/67 ,  H01L21/677

CPC分类号： H01L31/1868 ,  H01L21/3003 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67706 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  Y02B10/10 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction.The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) Providing one or more hydrogen sources accessible by each surface of the device; and iii) Heating the device, or a local region of the device to at least 40° C. while simultaneously illuminating at least some and/or advantageously all of the device with at least one light source whereby the cumulative power of all the incident photons with sufficient energy to generate electron hole pairs within the silicon (in other words photons with energy levels above the bandgap of silicon of 1.12 eV) is at least 20 mW/cm2.

公开(公告)号：US20160372625A1

公开(公告)日：2016-12-22

申请号：US15204813

申请日：2016-07-07

申请人： NewSouth Innovations Pty Limited

发明人： Stuart Ross Wenham ,  Phillip George Hamer ,  Brett Jason Hallam ,  Adeline Sugianto ,  Catherine Emily Chan ,  Lihui Song ,  Pei Hsuan Lu ,  Alison Maree Wenham ,  Ly Mai ,  Chee Mun Chong ,  GuangQi Xu ,  Matthew Edwards

IPC分类号： H01L31/18 ,  H01L21/677 ,  H01L21/67

CPC分类号： H01L31/1868 ,  H01L21/3003 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67706 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  Y02B10/10 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction.The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) Providing one or more hydrogen sources accessible by each surface of the device; and iii) Heating the device, or a local region of the device to at least 40° C. while simultaneously illuminating at least some and/or advantageously all of the device with at least one light source whereby the cumulative power of all the incident photons with sufficient energy to generate electron hole pairs within the silicon (in other words photons with energy levels above the bandgap of silicon of 1.12 eV) is at least 20 mW/cm2

摘要翻译： 提供了一种硅光电接合器件的氢化方法，该硅光电转换器件包括形成至少一个p-n结的p型硅半导体材料和n型硅半导体材料。 该方法包括：i）确保氢必须扩散的任何硅表面磷扩散层的峰值掺杂浓度为1×10 20原子/ cm 3或更小，并且硅必须扩散的硅表面硼扩散层的峰值掺杂浓度为1×10 19 原子/ cm 3以下; ii）提供可由设备的每个表面接近的一个或多个氢源; 以及iii）将所述装置或所述装置的局部区域加热到至少100℃，随后冷却所述装置，同时用至少一个光源照射所述装置的至少一些和/或有利地全部，由此累积功率 所有入射光子具有足够的能量以在硅内产生电子空穴对（换句话说，具有高于1.12eV的硅的带隙的能级的光子）为至少20mW / cm 2

公开(公告)号：US09190556B2

公开(公告)日：2015-11-17

申请号：US14402654

申请日：2013-05-20

申请人： NewSouth Innovations Pty Limited

发明人： Stuart Ross Wenham ,  Phillip George Hamer ,  Brett Jason Hallam ,  Adeline Sugianto ,  Catherine Emily Chan ,  Lihui Song ,  Pei Hsuan Lu ,  Alison Maree Wenham ,  Ly Mai ,  Chee Mun Chong ,  GuangQi Xu ,  Matthew Edwards

IPC分类号： H01L21/00 ,  H01L31/18 ,  H01L21/30

CPC分类号： H01L31/1868 ,  H01L21/3003 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67706 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1864 ,  Y02B10/10 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction.The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) Providing one or more hydrogen sources accessible by each surface of the device; and iii) Heating the device, or a local region of the device to at least 40° C. while simultaneously illuminating at least some and/or advantageously all of the device with at least one light source whereby the cumulative power of all the incident photons with sufficient energy to generate electron hole pairs within the silicon (in other words photons with energy levels above the bandgap of silicon of 1.12 eV) is at least 20 mW/cm2.

摘要翻译： 提供了一种硅光电接合器件的氢化方法，该硅光电转换器件包括形成至少一个p-n结的p型硅半导体材料和n型硅半导体材料。 该方法包括：i）确保氢必须扩散的任何硅表面磷扩散层的峰值掺杂浓度为1×1020原子/ cm3或更小，并且必须扩散氢的硅表面硼扩散层的峰值掺杂浓度为1× 1019原子/ cm3以下; ii）提供可由设备的每个表面接近的一个或多个氢源; 以及iii）将所述装置或所述装置的局部区域加热至少40℃，同时用至少一个光源同时照射所述装置的至少一些和/或有利地全部，由此所有入射的光子的累积功率 具有足够的能量以在硅内产生电子空穴对（换句话说，具有高于1.12eV的硅的带隙的能级的光子）为至少20mW / cm 2。