公开(公告)号：US5667034A

公开(公告)日：1997-09-16

申请号：US212242

申请日：1994-03-14

Applicant: Neil Jones ,  Mark D. Morris

Inventor： Neil Jones ,  Mark D. Morris

IPC: B62D6/02 ,  B62D5/06

CPC classification number: B62D6/02

Abstract: A vehicle power steering motor (31) provides a force to turn vehicle steerable wheels (14 and 16). A power steering control valve (22) includes first and second relatively rotatable valve members (40 and 42). The first and second valve members (40 and 42) port fluid to actuate the vehicle power steering motor (31) upon relative movement. A device (114) senses at least one vehicle operational characteristic and provides a signal indicative of the at least one vehicle operational characteristic. In a preferred embodiment, the at least one vehicle operational characteristic is vehicle lateral acceleration. A force transmitting device (116, 120, and 130) resists relative movement between the first and second valve members (40 and 42) with a force which varies as a function of the output signal. The force varies as a function of vehicle lateral acceleration.

Abstract translation: 车辆动力转向马达（31）提供转向车辆转向轮（14和16）的力。 动力转向控制阀（22）包括第一和第二相对可旋转的阀构件（40和42）。 第一和第二阀构件（40和42）在相对运动时将流体引导以致动车辆动力转向电动机（31）。 设备（114）感测至少一个车辆操作特性并提供指示至少一个车辆操作特性的信号。 在优选实施例中，至少一个车辆操作特性是车辆横向加速度。 力传递装置（116,120和130）利用作为输出信号的函数而变化的力抵抗第一和第二阀构件（40和42）之间的相对运动。 力作为车辆横向加速度的函数而变化。

公开(公告)号：US20080161549A1

公开(公告)日：2008-07-03

申请号：US11940934

申请日：2007-11-15

Applicant: Mark D. Morris ,  Michael R. Meyer ,  Jon C. Marlowe

Inventor： Mark D. Morris ,  Michael R. Meyer ,  Jon C. Marlowe

IPC: C07H21/00

CPC classification number: C07H21/00 ,  C12N15/1017

Abstract: The present invention provides methods for purifying nucleic acid molecules, wherein each method includes the steps of: (a) synthesizing nucleic acid molecules in a reaction mixture; (b) contacting the nucleic acid molecules with a proteinase for a period of time sufficient to degrade protein in the reaction mixture; (c) applying the nucleic acid molecules treated in accordance with step (b) to a size-limiting filter so that at least some of the nucleic acid molecules are trapped on the filter; and (d) washing the filter with a phosphate buffer having a pH in the range of from about 5.7 to about 8.5.

Abstract translation: 本发明提供了纯化核酸分子的方法，其中每种方法包括以下步骤：（a）在反应混合物中合成核酸分子; （b）使核酸分子与蛋白酶接触足以降解反应混合物中蛋白质的时间; （c）将根据步骤（b）处理的核酸分子应用于限制尺寸的过滤器，使得至少一些核酸分子被捕获在过滤器上; 和（d）用pH为约5.7至约8.5的磷酸盐缓冲液洗涤过滤器。

公开(公告)号：US5098119A

公开(公告)日：1992-03-24

申请号：US673680

申请日：1991-03-22

Applicant: Daniel E. Williams ,  Mark D. Morris

Inventor： Daniel E. Williams ,  Mark D. Morris

IPC: B60G17/018 ,  B60G17/033 ,  B60G17/04 ,  B60G21/06

CPC classification number: B60G17/018 ,  B60G17/033 ,  B60G17/04 ,  B60G21/06 ,  B60G2202/154 ,  B60G2202/24 ,  B60G2204/80 ,  B60G2400/104 ,  B60G2400/106 ,  B60G2400/25 ,  B60G2400/252 ,  B60G2400/50 ,  B60G2500/10 ,  B60G2500/20

Abstract: A semi-active suspension system having a linear actuator operatively connected between a sprung mass and an unsprung mass of the vehicle for each corner of the vehicle. An accumulator connected to the actuator through an electrically controlled valve. An actuatable fluid RAM is in fluid communication with the accumulator for controlling fluid pressure in the accumulator. A hydraulic ram driver is operatively connected to the RAM. A sensor senses force inputs to the vehicle. A controller controls (i) the ram driver for pressurizing the accumulator to a desired fluid pressure, and (ii) the electrically controlled valve in response to sensed force input so as to effect a fluid pressure change in the actuator. Each fluid RAM includes a hydraulic motor having a housing and a piston slidably mounted in the housing. The piston divides the housing into two variable volume fluid chambers, one fluid chamber in fluid communication with the accumulator and a second fluid chamber in communication with the second fluid chambers of each RAM of the other corners of the vehicle. This arrangement permits movement of the piston of the fluid RAM with reduced energy.

Abstract translation: 一种半主动悬架系统，其具有线性致动器，其可操作地连接在车辆的每个角落的车辆的簧上质量块和非簧载质量之间。 通过电控阀连接到执行机构的蓄能器。 可致动流体RAM与蓄能器流体连通以控制蓄能器中的流体压力。 液压柱塞驱动器可操作地连接到RAM。 传感器感测到车辆的力输入。 控制器控制（i）用于将蓄能器加压到所需流体压力的压头驱动器，以及（ii）响应于感测的力输入的电控阀，以便实现致动器中的流体压力变化。 每个流体RAM包括具有壳体和可滑动地安装在壳体中的活塞的液压马达。 活塞将壳体分成两个可变容积的流体室，一个与蓄能器流体连通的流体室和与车辆其它角落的每个RAM的第二流体室连通的第二流体室。 这种布置允许流体RAM的活塞以更低的能量移动。

公开(公告)号：US4824796A

公开(公告)日：1989-04-25

申请号：US77953

申请日：1987-07-10

Applicant: Tzu-Yin Chiu ,  Gen M. Chin ,  Ronald C. Hanson ,  Maureen Y. Lau ,  Kwing F. Lee ,  Mark D. Morris ,  Alexander M. Voshchenkov ,  Avinoam Kornblit ,  Joseph Lebowitz ,  William T. Lynch

Inventor： Tzu-Yin Chiu ,  Gen M. Chin ,  Ronald C. Hanson ,  Maureen Y. Lau ,  Kwing F. Lee ,  Mark D. Morris ,  Alexander M. Voshchenkov ,  Avinoam Kornblit ,  Joseph Lebowitz ,  William T. Lynch

IPC: H01L29/73 ,  H01L21/225 ,  H01L21/3215 ,  H01L21/331 ,  H01L21/82 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/732 ,  H01L21/70 ,  H01L27/00

CPC classification number: H01L29/41783 ,  H01L21/2257 ,  H01L21/32155 ,  H01L21/8249 ,  H01L27/0623 ,  Y10S148/009 ,  Y10S148/01 ,  Y10S148/124 ,  Y10S148/151

Abstract: A process for creating bipolar and CMOS transistors on a p-type silicon substrate is disclosed. The silicon substrate has typical n+ buried wells and field oxide regions to isolate the individual transistor devices. In accordance with the process, stacks of material are created over the gate elements of the CMOS devices and over the emitter elements of the bipolar transistors. The stacks of material over the gate elements have a silicon dioxide gate layer in contact with the epitaxial layer of the substrate, and the stacks of material over the emitter elements have a polycrystalline silicon layer in contact with the epitaxial layer. Walls of silicon dioxide are created around the stacks in order to insulate the material within the stacks from the material deposited outside of the walls. Polycrystalline silicon in contact with the epitaxial layer is deposited outside the walls surrounding the stacks. All polycrystalline silicon layers in contact with the epitaxial layer are implanted with appropriate dopants such that these layers serve as reservoirs of dopant in order to simultaneously create the source and drain elements of the CMOS devices and the emitter elements of the bipolar devices during a heating step in the process. A tungsten layer is deposited over the polycrystalline layer in order to provide a conductive coupling to aluminum electrodes.

Abstract translation: 公开了一种在p型硅衬底上制造双极和CMOS晶体管的工艺。 硅衬底具有典型的n +掩埋阱和场氧化物区域以隔离各个晶体管器件。 根据该过程，在CMOS器件的栅极元件和双极晶体管的发射极元件之上形成材料堆叠。 在栅极元件上的堆叠材料具有与衬底的外延层接触的二氧化硅栅极层，并且在发射极元件上的材料堆叠具有与外延层接触的多晶硅层。 在堆叠周围产生二氧化硅壁，以便将堆叠内的材料与沉积在壁外部的材料隔离。 与外延层接触的多晶硅沉积在堆叠周围的壁的外部。 与外延层接触的所有多晶硅层都注入合适的掺杂剂，使得这些层用作掺杂剂的储存器，以便在加热步骤期间同时产生CMOS器件的源极和漏极元件以及双极器件的发射极元件 正在进行中。 为了提供与铝电极的导电耦合，在多晶层上沉积钨层。

公开(公告)号：US4784971A

公开(公告)日：1988-11-15

申请号：US47946

申请日：1987-05-08

Applicant: Tzu-Yin Chiu ,  Gen M. Chin ,  Ronald. C. Hanson ,  Maureen Y. Lau ,  Kwing F. Lee ,  Mark D. Morris ,  Alexander M. Voschenkov

Inventor： Tzu-Yin Chiu ,  Gen M. Chin ,  Ronald. C. Hanson ,  Maureen Y. Lau ,  Kwing F. Lee ,  Mark D. Morris ,  Alexander M. Voschenkov

IPC: H01L29/73 ,  H01L21/225 ,  H01L21/3215 ,  H01L21/331 ,  H01L21/82 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/732 ,  H01L21/70 ,  H01L27/00

CPC classification number: H01L29/41783 ,  H01L21/2257 ,  H01L21/32155 ,  H01L21/8249 ,  H01L27/0623 ,  Y10S148/009 ,  Y10S148/01 ,  Y10S148/124 ,  Y10S148/151

Abstract: A process for creating bipolar and CMOS transistors on a p-type silicon substrate is disclosed. The silicon substrate has a typical n+ buried wells and field oxide regions to isolate the individual transistor devices. In accordance with the process, stacks of material are created over the gate elements of the CMOS devices and over the emitter elements of the bipolar transistors. The stacks of material over the gate elements have a silicon dioxide gate layer in contact with the epitaxial layer of the substrate, and the stacks of material over the emitter elements have a polycrystalline silicon layer in contact with the epitaxial layer. Walls of silicon dioxide are created around the stacks in order to insulate the material within the stacks from the material deposited outside of the walls. Polycrystalline silicon in contact with the epitaxial layer is deposited outside the walls surrounding the stacks. All polycrystalline silicon layers in contact with the epitaxial layer are implanted with appropriate dopants such that these layers serve as reservoirs of dopant in order to simultaneously create the source and drain elements of the CMOS devices and the emitter elements of the bipolar device during a heating step in the process. A tungsten layer is deposited over the polycrystalline layer in order to provide a conductive coupling to aluminum electrodes.

Abstract translation: 公开了一种在p型硅衬底上制造双极和CMOS晶体管的工艺。 硅衬底具有典型的n +掩埋阱和场氧化物区域以隔离各个晶体管器件。 根据该过程，在CMOS器件的栅极元件和双极晶体管的发射极元件之上形成材料堆叠。 在栅极元件上的堆叠材料具有与衬底的外延层接触的二氧化硅栅极层，并且在发射极元件上的材料堆叠具有与外延层接触的多晶硅层。 在堆叠周围产生二氧化硅壁，以便将堆叠内的材料与沉积在壁外部的材料隔离。 与外延层接触的多晶硅沉积在堆叠周围的壁的外部。 与外延层接触的所有多晶硅层都注入合适的掺杂剂，使得这些层用作掺杂剂的储存器，以便在加热步骤期间同时产生CMOS器件的源极和漏极元件以及双极器件的发射极元件 正在进行中。 为了提供与铝电极的导电耦合，在多晶层上沉积钨层。