公开(公告)号：US20190157440A1

公开(公告)日：2019-05-23

申请号：US16237362

申请日：2018-12-31

申请人： NXP USA, Inc.

发明人： Bruce McRae Green ,  Darrell Glenn Hill ,  Karen Elizabeth Moore ,  Jenn-Hwa Huang ,  Yuanzheng Yue ,  James Allen Teplik ,  Lawrence Scott Klingbeil

IPC分类号： H01L29/778 ,  H01L21/311 ,  H01L21/285 ,  H01L29/20 ,  H01L29/10 ,  H01L29/205 ,  H01L29/06 ,  H01L29/66 ,  H01L29/40

摘要： A semiconductor device includes a semiconductor substrate configured to include a channel, first and second ohmic contacts supported by the semiconductor substrate, in ohmic contact with a contact region formed within the semiconductor substrate, and spaced from one another for current flow between the first and second ohmic contacts through the channel, and first and second dielectric layers supported by the semiconductor substrate. At least one of the first and second ohmic contacts extends through respective openings in the first and second dielectric layers. The second dielectric layer is disposed between the first dielectric layer and a surface of the semiconductor substrate, and the second dielectric layer includes a wet etchable material having an etch selectivity to a dry etchant of the first dielectric layer.

公开(公告)号：US10957790B2

公开(公告)日：2021-03-23

申请号：US16237362

申请日：2018-12-31

申请人： NXP USA, Inc.

发明人： Bruce McRae Green ,  Darrell Glenn Hill ,  Karen Elizabeth Moore ,  Jenn-Hwa Huang ,  Yuanzheng Yue ,  James Allen Teplik ,  Lawrence Scott Klingbeil

IPC分类号： H01L29/778 ,  H01L21/311 ,  H01L21/285 ,  H01L29/20 ,  H01L29/205 ,  H01L29/06 ,  H01L29/66 ,  H01L29/40 ,  H01L29/10 ,  H01L23/31 ,  H01L29/812 ,  H01L29/51

摘要： A semiconductor device includes a semiconductor substrate configured to include a channel, first and second ohmic contacts supported by the semiconductor substrate, in ohmic contact with a contact region formed within the semiconductor substrate, and spaced from one another for current flow between the first and second ohmic contacts through the channel, and first and second dielectric layers supported by the semiconductor substrate. At least one of the first and second ohmic contacts extends through respective openings in the first and second dielectric layers. The second dielectric layer is disposed between the first dielectric layer and a surface of the semiconductor substrate, and the second dielectric layer includes a wet etchable material having an etch selectivity to a dry etchant of the first dielectric layer.

公开(公告)号：US11784236B2

公开(公告)日：2023-10-10

申请号：US17036681

申请日：2020-09-29

申请人： NXP USA, Inc.

发明人： Jenn Hwa Huang ,  Yuanzheng Yue ,  Bruce Mcrae Green ,  Karen Elizabeth Moore ,  James Allen Teplik

IPC分类号： H01L29/66 ,  H01L21/265 ,  H01L29/778 ,  H01L29/08 ,  H01L29/20

CPC分类号： H01L29/66462 ,  H01L21/26553 ,  H01L29/0843 ,  H01L29/7786 ,  H01L29/2003

摘要： Methods of fabricating a semiconductor device include providing a semiconductor substrate that includes a plurality of epitaxial layers, including a channel layer and a permanent cap over the channel layer, where the permanent cap defines an upper surface of the semiconductor substrate, and forming a sacrificial cap over the permanent cap in an active region of the device, where the sacrificial cap comprises a semiconductor material that includes aluminum. The method also includes forming one or more current carrying regions (e.g., source and drain regions) in the semiconductor substrate in the active region of the device by performing an ion implantation process to implant ions through the sacrificial cap, and into the semiconductor substrate, completely removing the sacrificial cap in the active region of the device, while refraining from removing the permanent cap, and forming one or more current carrying contacts over the one or more current carrying regions.

公开(公告)号：US20220102529A1

公开(公告)日：2022-03-31

申请号：US17036681

申请日：2020-09-29

申请人： NXP USA, Inc.

发明人： Jenn Hwa Huang ,  Yuanzheng Yue ,  Bruce McRae Green ,  Karen Elizabeth Moore ,  James Allen Teplik

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L21/265 ,  H01L29/778 ,  H01L29/20

摘要： Methods of fabricating a semiconductor device include providing a semiconductor substrate that includes a plurality of epitaxial layers, including a channel layer and a permanent cap over the channel layer, where the permanent cap defines an upper surface of the semiconductor substrate, and forming a sacrificial cap over the permanent cap in an active region of the device, where the sacrificial cap comprises a semiconductor material that includes aluminum. The method also includes forming one or more current carrying regions (e.g., source and drain regions) in the semiconductor substrate in the active region of the device by performing an ion implantation process to implant ions through the sacrificial cap, and into the semiconductor substrate, completely removing the sacrificial cap in the active region of the device, while refraining from removing the permanent cap, and forming one or more current carrying contacts over the one or more current carrying regions.