- Patent Title: Semiconductor device with selectively etched surface passivation
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Application No.: US16237362Application Date: 2018-12-31
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Publication No.: US10957790B2Publication Date: 2021-03-23
- Inventor: Bruce McRae Green , Darrell Glenn Hill , Karen Elizabeth Moore , Jenn-Hwa Huang , Yuanzheng Yue , James Allen Teplik , Lawrence Scott Klingbeil
- Applicant: NXP USA, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Agent Bruce M. Green
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/311 ; H01L21/285 ; H01L29/20 ; H01L29/205 ; H01L29/06 ; H01L29/66 ; H01L29/40 ; H01L29/10 ; H01L23/31 ; H01L29/812 ; H01L29/51
Abstract:
A semiconductor device includes a semiconductor substrate configured to include a channel, first and second ohmic contacts supported by the semiconductor substrate, in ohmic contact with a contact region formed within the semiconductor substrate, and spaced from one another for current flow between the first and second ohmic contacts through the channel, and first and second dielectric layers supported by the semiconductor substrate. At least one of the first and second ohmic contacts extends through respective openings in the first and second dielectric layers. The second dielectric layer is disposed between the first dielectric layer and a surface of the semiconductor substrate, and the second dielectric layer includes a wet etchable material having an etch selectivity to a dry etchant of the first dielectric layer.
Public/Granted literature
- US20190157440A1 SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION Public/Granted day:2019-05-23
Information query
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