公开(公告)号：US12202733B2

公开(公告)日：2025-01-21

申请号：US17617367

申请日：2020-06-17

Applicant: NORTHWESTERN UNIVERSITY

Inventor： Mark C. Hersam ,  Xiaolong Liu

IPC: C01B32/182 ,  B05D5/12 ,  C01B35/02 ,  C01B35/04 ,  C23C14/04 ,  C23C14/12 ,  C23C14/24 ,  C23C16/04 ,  C23C16/22 ,  H01B1/06 ,  H10K71/16 ,  H10K77/10 ,  H10K85/30 ,  H10K85/60 ,  H10K102/00

Abstract: The invention relates to two dimensional (2D) heterostructures and methods of fabricating the same. The 2D hetero structures are integration of borophene with graphene and 2D lateral and vertical hetero structures with sharp and rotationally commensurate interfaces. The rich bonding configurations of boron indicate that borophene can be integrated into a diverse range of 2D heterostructures.

公开(公告)号：US20240150185A1

公开(公告)日：2024-05-09

申请号：US18281648

申请日：2022-03-22

Applicant: NORTHWESTERN UNIVERSITY

Inventor： Mark C. Hersam ,  Xiaolong Liu

IPC: C01B35/02

CPC classification number: C01B35/023 ,  C01P2002/20 ,  C01P2004/04 ,  C01P2004/20 ,  C01P2006/80

Abstract: The invention relates to multi-atomic layer borophene and a method of synthesizing multi-atomic layer borophene. The multi-atomic layer borophene comprises bilayer (BL) borophene. The BL borophene is BL-α borophene comprising two covalently bonded α-phase borophene monolayers and being metallic and in form of a highly faceted island with a six-fold symmetric Moiré superlattice surrounded by full-coverage intermixed SL v1/5 and v1/6 borophene. The BL-α borophene nucleates and emerges at intersections of multiple SL borophene domains. The synthesizing method includes depositing boron on a substrate with atomically flat terraces at a temperature in an ultrahigh vacuum (UHV) chamber to grow multi-atomic layer borophene beyond a full coverage of single-atomic layer (SL) borophene.

公开(公告)号：US20200148546A1

公开(公告)日：2020-05-14

申请号：US16714990

申请日：2019-12-16

Applicant: NORTHWESTERN UNIVERSITY

Inventor： Mark C. Hersam ,  Xiaolong Liu

IPC: C01B35/04 ,  H01L51/00 ,  C23C16/22 ,  C23C16/04 ,  C23C14/24 ,  C23C14/12 ,  C23C14/04

Abstract: A method of preparing a boron allotrope-organic lateral heterostructural article includes providing an article comprising a substrate comprising a portion thereof coupled to a boron allotrope comprising an elemental boron layer; generating an organic compound vapor from a solid organic compound source, said organic compound vapor having a higher enthalpy of adsorption on said substrate compared to enthalpy of adsorption on said boron allotrope; and contacting said organic compound vapor with said article to selectively deposit said organic compound on a substrate portion not coupled to said boron allotrope to provide a heterostructural article comprising said organic compound and said boron allotrope laterally adjacent one to the other and providing a lateral interface one with the other.

公开(公告)号：US20180222755A1

公开(公告)日：2018-08-09

申请号：US15892124

申请日：2018-02-08

Applicant: Northwestern University

Inventor： Mark C. Hersam ,  Xiaolong Liu

IPC: C01B35/04 ,  C23C16/04 ,  C23C16/22 ,  H01L51/00

CPC classification number: C01B35/04 ,  C01P2002/20 ,  C01P2002/60 ,  C01P2004/90 ,  C01P2006/40 ,  C01P2006/90 ,  C23C14/04 ,  C23C14/12 ,  C23C14/24 ,  C23C16/04 ,  C23C16/22 ,  H01L51/0011 ,  H01L51/0053 ,  H01L51/008 ,  H01L51/0096 ,  H01L2251/301

Abstract: Articles comprising a boron allotrope and an organic compound having a lateral interface one with the other, together with method(s) of preparation of such articles.

公开(公告)号：US12116279B2

公开(公告)日：2024-10-15

申请号：US17723595

申请日：2022-04-19

Applicant: NORTHWESTERN UNIVERSITY

Inventor： Mark C. Hersam ,  Qiucheng Li ,  Xiaolong Liu ,  Eden B Aklile

IPC: C01B32/182 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B35/02 ,  H01L21/02 ,  H01L21/285

CPC classification number: C01B32/182 ,  C01B35/023 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02499 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/02603 ,  H01L21/02617 ,  H01L21/28506 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B2204/06 ,  C01B2204/20

Abstract: This invention in one aspect relates to a method of synthesizing a self-assembled mixed-dimensional heterostructure including 2D metallic borophene and 1D semiconducting armchair-oriented graphene nanoribbons (aGNRs). The method includes depositing boron on a substrate to grow borophene thereon at a substrate temperature in an ultrahigh vacuum (UHV) chamber; sequentially depositing 4,4″-dibromo-p-terphenyl on the borophene grown substrate at room temperature in the UHV chamber to form a composite structure; and controlling multi-step on-surface coupling reactions of the composite structure to self-assemble a borophene/graphene nanoribbon mixed-dimensional heterostructure. The borophene/aGNR lateral heterointerfaces are structurally and electronically abrupt, thus demonstrating atomically well-defined metal-semiconductor heterojunctions.

公开(公告)号：US20230008590A1

公开(公告)日：2023-01-12

申请号：US17723595

申请日：2022-04-19

Applicant: NORTHWESTERN UNIVERSITY

Inventor： Mark C. Hersam ,  Qiucheng Li ,  Xiaolong Liu ,  Eden B Aklile

IPC: C01B32/184 ,  H01L21/02 ,  H01L21/285 ,  C01B35/02

Abstract: This invention in one aspect relates to a method of synthesizing a self-assembled mixed-dimensional heterostructure including 2D metallic borophene and 1D semiconducting armchair-oriented graphene nanoribbons (aGNRs). The method includes depositing boron on a substrate to grow borophene thereon at a substrate temperature in an ultrahigh vacuum (UHV) chamber; sequentially depositing 4,4″-dibromo-p-terphenyl on the borophene grown substrate at room temperature in the UHV chamber to form a composite structure; and controlling multi-step on-surface coupling reactions of the composite structure to self-assemble a borophene/graphene nanoribbon mixed-dimensional heterostructure. The borophene/aGNR lateral heterointerfaces are structurally and electronically abrupt, thus demonstrating atomically well-defined metal-semiconductor heterojunctions.

公开(公告)号：US10550003B2

公开(公告)日：2020-02-04

申请号：US15892124

申请日：2018-02-08

Applicant: Northwestern University

Inventor： Mark C. Hersam ,  Xiaolong Liu

IPC: C01B35/04 ,  H01L51/00 ,  C23C16/04 ,  C23C16/22

Abstract: Articles comprising a boron allotrope and an organic compound having a lateral interface one with the other, together with method(s) of preparation of such articles.

公开(公告)号：US20220242740A1

公开(公告)日：2022-08-04

申请号：US17617367

申请日：2020-06-17

Applicant: NORTHWESTERN UNIVERSITY

Inventor： Mark C. Hersam ,  Xiaolong Liu

IPC: C01B35/04 ,  C23C16/04 ,  C23C16/22 ,  H01L51/00 ,  C23C14/04 ,  C23C14/12 ,  C23C14/24 ,  B05D5/12 ,  H01B1/06

Abstract: The invention relates to two dimensional (2D) heterostructures and methods of fabricating the same. The 2D hetero structures are integration of borophene with graphene and 2D lateral and vertical hetero structures with sharp and rotationally commensurate interfaces. The rich bonding configurations of boron indicate that borophene can be integrated into a diverse range of 2D heterostructures.

公开(公告)号：US10954132B2

公开(公告)日：2021-03-23

申请号：US16714990

申请日：2019-12-16

Applicant: NORTHWESTERN UNIVERSITY

Inventor： Mark C. Hersam ,  Xiaolong Liu

IPC: H01B1/06 ,  C23C14/00 ,  B05D5/12 ,  C01B35/04 ,  C23C16/04 ,  C23C16/22 ,  H01L51/00 ,  C23C14/04 ,  C23C14/12 ,  C23C14/24

Abstract: A method of preparing a boron allotrope-organic lateral heterostructural article includes providing an article comprising a substrate comprising a portion thereof coupled to a boron allotrope comprising an elemental boron layer; generating an organic compound vapor from a solid organic compound source, said organic compound vapor having a higher enthalpy of adsorption on said substrate compared to enthalpy of adsorption on said boron allotrope; and contacting said organic compound vapor with said article to selectively deposit said organic compound on a substrate portion not coupled to said boron allotrope to provide a heterostructural article comprising said organic compound and said boron allotrope laterally adjacent one to the other and providing a lateral interface one with the other.