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公开(公告)号：US20230114358A1
公开(公告)日：2023-04-13
申请号：US17908167
申请日：2021-03-29
发明人： Yuto HASHIMOTO , Tokio NISHITA , Yuki ENDO
IPC分类号： H01L21/311 , G03F7/11 , C09D163/04 , H01L21/306 , H01L21/308
摘要： A protective film-forming composition excelling in preservation stability and having a favorable masking (protection) function against wet etching solutions when processing a semiconductor substrate, a protective film manufactured by using the composition, a substrate with a resist pattern, and a method for manufacturing a semiconductor device. The protective film-forming composition provides protection against wet etching solutions for semiconductors and contains: a polymer having a unit structure represented by Formula (1-1): Ar represents a benzene ring, a naphthalene ring, or an anthracene ring; R1 represents a hydroxy group, a mercapto group; n1 represents an integer from 0-3; n2 represents 1 or 2; L1 represents a single bond or an alkylene group that has 1-10 carbons; E represents an epoxy group; when n2=1, T1 represents an alkylene group that has 1-10 carbons; and when n2=2, T1 represents a nitrogen atom or an amide bond.
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2.发明申请公开(公告)号：US20220204686A1
公开(公告)日：2022-06-30
申请号：US17601674
申请日：2020-04-09
摘要： A protective film-forming composition including good mask (protection) function against a wet etching liquid and a high dry etching rate during processing of semiconductor substrates, including good coverage even in stepped substrates, and from which flat films can be formed due to a small difference in film thickness after embedding; a protective film produced using said composition; a substrate with a resist pattern; and a method for manufacturing a semiconductor device. A protective film-forming composition which protects against a semiconductor wet etching liquid, wherein a reaction product (P) of a diepoxy compound (B) and an bifunctional proton-generating compound (C) contains a structure represented by formula (1) (in formula (1), Ar represents a C6-40 aryl group, n represents an integer of 2-10, —Y— represents —OCO—, —O— or —S—, and * represents the bonding site with the reaction product (P) molecule terminal). The protective film-forming composition further includes an organic solvent (S).
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公开(公告)号：US20210403635A1
公开(公告)日：2021-12-30
申请号：US17279299
申请日：2019-10-31
发明人： Takafumi ENDO , Tokio NISHITA , Ryuta MIZUOCHI
IPC分类号： C08G59/24 , C08G59/68 , G03F7/11 , H01L21/311 , G03F7/16 , H01L21/308 , H01L21/033
摘要： A protective film forming composition forms a flat film having good mask function against a wet etching liquid during a semiconductor substrate processing, high dry etching rate and good coverage of a substrate with level difference, while having small film thickness difference after embedding. A protective film is produced using this composition. A substrate has a resist pattern. A method produces a semiconductor device. A composition forms a protective film against a wet etching liquid for semiconductors, containing a solvent and a ring-opened polymer (C) obtained by reaction between a diepoxy compound (A) and a bi- or higher functional proton-generating compound (B). The ring-opened polymer (C) is preferably represented by a unit structure of formula (A-1). (In formula (A-1), Q represents a divalent organic group generated by the diepoxy compound (A) ring-opening polymerization; and T represents a divalent organic group derived from the bi- or higher functional proton-generating compound (B)).
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公开(公告)号：US20240219834A1
公开(公告)日：2024-07-04
申请号：US18286612
申请日：2022-04-25
发明人： Shun KUBODERA , Takahiro KISHIOKA , Tokio NISHITA
摘要： A semiconductor device manufacturing process, forming a multilayer structure of a metal oxide (e.g., copper oxide) and a resist underlayer film on a stepped metal substrate reduces exposure reflectance from the substrate, thereby reducing standing waves of the resist pattern (defects caused by reflection) and provides a favorable rectangular resist pattern on the substrate. A pattern-equipped substrate manufacturing method includes: a step for performing an oxidation treatment on a substrate containing metal on a surface thereof to form a metal oxide film on the substrate surface; a step for applying a resist on the metal oxide film and conducting baking to form a resist film; a step for exposing a semiconductor substrate covered by the metal oxide film and the resist; and a step for developing the exposed resist film and conducting patterning.
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公开(公告)号：US20230333470A1
公开(公告)日：2023-10-19
申请号：US18025336
申请日：2021-09-09
发明人： Tokio NISHITA , Yuki ENDO
CPC分类号： G03F7/0385 , G03F7/0045 , G03F7/168 , G03F7/2016
摘要： A protective film formation composition contains a polymer having a unit structure represented by formula (1-1), a compound or a polymer having phenolic hydroxy group other than catechol, (C) a thermal acid generator, and (D) a solvent.
(Ar represents a benzene, naphthalene, or an anthracene ring; R1 represents a hydroxy, mercapto,amino, halogeno, or an alkyl group that has 1-10 carbon atoms and that may be substituted or interrupted by a hetero atom and may be substituted by a hydroxy group; n1 represents an integer of 0-3; L1 represents a single bond or an alkylene group having 1-10 carbon atoms; E represents an epoxy group; when n2=1, T1 represents a single bond or an alkylene group having 1-10 carbon atoms and may be interrupted by an ether bond, an ester bond, or an amide bond; and when n2=2, T1 represents a nitrogen atom or an amide bond.)-
6.发明公开公开(公告)号：US20240301126A1
公开(公告)日：2024-09-12
申请号：US18616255
申请日：2024-03-26
CPC分类号： C08G59/1483 , C08G59/1455 , C08G59/26 , C08G59/621 , C08G59/68 , H01L21/027 , H01L21/67075
摘要： A protective film-forming composition including good mask (protection) function against a wet etching liquid and a high dry etching rate during processing of semiconductor substrates, including good coverage even in stepped substrates, and from which flat films can be formed due to a small difference in film thickness after embedding; a protective film produced using said composition; a substrate with a resist pattern; and a method for manufacturing a semiconductor device. A protective film-forming composition which protects against a semiconductor wet etching liquid, wherein a reaction product (P) of a diepoxy compound (B) and an bifunctional proton-generating compound (C) contains a structure represented by formula (1) (in formula (1), Ar represents a C6-40 aryl group, n represents an integer of 2-10, —Y— represents—OCO—, —O— or —S—, and * represents the bonding site with the reaction product (P) molecule terminal). The protective film-forming composition further includes an organic solvent (S).
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公开(公告)号：US20210151318A1
公开(公告)日：2021-05-20
申请号：US17045304
申请日：2019-04-02
摘要： Provided are: a composition for forming a coating film, the composition comprising (a) a polymer containing a structural unit represented by formula (1a) or (1b), and (b) a solvent including 51-99 mass % of water and 1-49 mass % of at least one organic solvent selected from the group consisting of propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether, methyl 2-hydroxyisobutyrate, ethyl 3-ethoxypropionate, and ethyl lactate; and a method for manufacturing a semiconductor device using the same.
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公开(公告)号：US20190227438A1
公开(公告)日：2019-07-25
申请号：US16332219
申请日：2017-09-15
发明人： Tokio NISHITA , Rikimaru SAKAMOTO
IPC分类号： G03F7/11 , C08F220/36 , C09D133/14 , G03F7/16 , G03F7/20 , G03F7/38 , G03F7/32
摘要： A resist underlayer film-forming composition for lithography including a copolymer having a structural unit of the following Formula (1) to Formula (3), a crosslinking agent, an organic acid catalyst, and a solvent: (wherein R1s are independently a hydrogen atom or a methyl group, R2 is a C1-3 alkylene group, A is a protective group, R3 is an organic group having a 4-membered ring to 7-membered ring lactone framework, adamantane framework, tricyclodecane framework or norbornane framework, R4 is a linear, branched or cyclic organic group having a carbon atom number of 1 to 12 in which at least one hydrogen atom is substituted with a fluoro group and which optionally has at least one hydroxy group as a substituent).
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公开(公告)号：US20240168385A1
公开(公告)日：2024-05-23
申请号：US18279766
申请日：2022-03-03
发明人： Tokio NISHITA , Yuto HASHIMOTO , Yuki ENDO
CPC分类号： G03F7/168 , C08G59/20 , G03F7/0045 , G03F7/0048 , G03F7/11 , G03F7/40
摘要： A protection film formation composition for a wet-etching solution for semiconductors, the protection film formation composition including: (A) a compound having no repeating structural unit and contains a terminal group (A1), a polyvalent group (A2) and a linking group (A3). Terminal group (A1) binds only to linking group (A3), polyvalent group (A2) binds only to linking group (A3), linking group (A3) binds to terminal group (A1) at one terminal and to polyvalent group (A2) at the other terminal and optionally binds to another linking group (A3), terminal group (A1) is represented by formula (I), polyvalent group (A2) represents a group having a valency of 2 to 4; and linking group (A3) represents an aromatic hydrocarbon group; (B) a thermoacid generator (B-1) and/or a curing agent (B-2); and (C) a solvent.
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公开(公告)号：US20230187208A1
公开(公告)日：2023-06-15
申请号：US17926033
申请日：2021-06-11
发明人： Tokio NISHITA , Yuto HASHIMOTO , Yuki ENDO
IPC分类号： H01L21/027 , C07D303/27 , C07D303/16 , H01L21/306
CPC分类号： H01L21/0275 , C07D303/27 , C07D303/16 , H01L21/30604
摘要： A composition for protective film formation can form a flat film that satisfactorily functions as a mask (protection) against wet etchants during semiconductor substrate processing and has a low dry etching rate, the composition having satisfactory covering and recess-filling properties when applied to rugged substrates and having a small thickness difference after the recess filling. A protective film, a resist underlayer film, and a resist-pattern-coated substrate each produced using the composition; and a method for producing a semiconductor device. The composition, which is for forming films for protection against wet etchants for semiconductors, includes an organic solvent and a compound that has a molecular end having a structure including at least one pair of adjoining hydroxyl groups and has a molecular weight of 1,500 or less, wherein particles present therein have an average particle diameter, as determined by a dynamic light scattering method, of 3 nm or smaller.
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