Thermal Diode
    4.
    发明申请
    Thermal Diode 审中-公开
    热二极管

    公开(公告)号:US20160195344A1

    公开(公告)日:2016-07-07

    申请号:US15044299

    申请日:2016-02-16

    Abstract: The thermal diode is formed of a first material as a ceramic material exhibiting thermal conductivity that increases in a certain temperature range of −200° C. or higher but 1000° C. or lower and a second material exhibiting the thermal conductivity that decreases in the temperature range, the first material and the second material being bonded together. The first material has preferably a microstructure having a characteristic length La of 1 nm to 10 μm.

    Abstract translation: 热二极管由作为陶瓷材料的第一材料形成,其具有在-200℃或更高但1000℃或更低的特定温度范围内增加的导热性,并且在第 温度范围,第一材料和第二材料结合在一起。 第一材料优选具有1nm至10μm的特征长度La的微结构。

    Oriented ALN sintered body and method for producing the same

    公开(公告)号:US11059753B2

    公开(公告)日:2021-07-13

    申请号:US16420334

    申请日:2019-05-23

    Abstract: A method for producing an oriented AlN sintered body includes a first step of preparing a formed body by forming a mixture obtained by mixing a sintering aid with an AlN raw-material powder containing a plate-like AlN powder whose plate surface is a c-plane and which has an aspect ratio of 3 or more and an average thickness of 0.05 to 1.8 μm, wherein the mixture is formed such that the plate surface of the plate-like AlN powder is disposed along a surface of the formed body; and a second step of obtaining an oriented AlN sintered body by subjecting the formed body to hot-press sintering in a non-oxidizing atmosphere while applying a pressure to the surface of the formed body.

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