公开(公告)号：US10756693B1

公开(公告)日：2020-08-25

申请号：US16596749

申请日：2019-10-08

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Kai-Po Shang ,  Jui-Hsiu Jao

IPC: H03H7/00 ,  H01L23/64

Abstract: An integrated circuit device is disclosed. The integrated circuit device includes a capacitor array, a decoder circuit, and an integrated circuit. The capacitor array includes a plurality of capacitor units. The decoder circuit is coupled to the capacitor array. The integrated circuit is coupled to the decoder circuit. The decoder circuit is configured to conduct part of the plurality of capacitor units, and to un-conduct part of the plurality of capacitor units, so as to adjust a capacitance value coupled to the integrated circuit.

公开(公告)号：US12057393B2

公开(公告)日：2024-08-06

申请号：US17508965

申请日：2021-10-22

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Kai-Po Shang ,  Jui-Hsiu Jao

IPC: H01L23/525 ,  H01L27/06

CPC classification number: H01L23/5256 ,  H01L23/5252 ,  H01L27/0617 ,  H01L27/0688

Abstract: A semiconductor device with a fuse component is provided. The semiconductor device includes a substrate having an active region; a fuse dielectric layer disposed in the active region; and a gate metal layer disposed in the active region and surrounded by the fuse dielectric layer. The gate metal layer is configured to receive a voltage to change a resistivity between the gate metal layer and the active region.

公开(公告)号：US12002752B2

公开(公告)日：2024-06-04

申请号：US17541745

申请日：2021-12-03

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Kai-Po Shang ,  Jui-Hsiu Jao

IPC: H01L23/525 ,  H01L29/40 ,  H01L29/423 ,  H01L23/535

CPC classification number: H01L23/5256 ,  H01L23/5252 ,  H01L29/401 ,  H01L29/4236 ,  H01L23/535

Abstract: The present disclosure provides a method for manufacturing a fuse component having a three-dimensional (3D) structure. The method includes providing an active region, forming a first recess region and a second recess region in the active region, disposing a fuse dielectric material in the first recess region and the second recess region, and filling the first recess region and the second recess region with a gate metal material.

公开(公告)号：US11916015B2

公开(公告)日：2024-02-27

申请号：US17510747

申请日：2021-10-26

Applicant: NANYA TECHNOLOGY CORPORATION

Inventor： Kai-Po Shang ,  Jui-Hsiu Jao

IPC: H01L23/525 ,  H01L29/40 ,  H01L29/423 ,  H10B12/00

CPC classification number: H01L23/5252 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/4238 ,  H10B12/01

Abstract: A fuse component, a semiconductor device, and a method of manufacturing a fuse component are provided. The fuse component includes an active region having a surface, a fuse dielectric layer extending from the surface of the active region into the active region, and a gate metal layer surrounded by the fuse dielectric layer.