Abstract:
A temperature sensor that includes a first electrode layer, a second electrode layer, and a thermistor layer between the first and second electrode layers. The thermistor layer includes a spinel-type semiconductor ceramic composition powder containing Mn, Ni, and Fe, and an organic polymer component. In the semiconductor ceramic composition powder, the molar ratio of Mn to Ni is 85/15≥Mn/Ni≥65/35, and when the total molar quantity of Mn and Ni is 100 parts by mole, the content of Fe is 30 parts by mole or less, and the semiconductor ceramic composition powder is 2 μm or less in particle size.
Abstract:
A resin composition constituting dielectric resin films of a film capacitor includes a first atom group including at least one functional group selected from among a methylene group, an aromatic ring and an ether group and having a relatively small molar polarizability, and a second atom group including at least one functional group selected from among a hydroxyl group, an amino group and a carbonyl group and having a relatively large molar polarizability. The resin composition satisfies the condition that a value calculated from the formula (sum of absorption band intensities of first atom group)/(sum of absorption band intensities of second atom group) is 1.0 or more. Herein, as absorption band intensities of the functional groups, peak intensities detected in specific wavenumber ranges are employed.
Abstract:
A temperature sensor that includes an organic-inorganic composite negative temperature coefficient thermistor and a transistor. The organic-inorganic composite negative temperature coefficient thermistor includes a thermistor layer which includes spinel-type semiconductor ceramic composition powder containing Mn, Ni and Fe and an organic polymer component, and a pair of electrode layers. The semiconductor ceramic composition powder has a molar ratio of Mn to Ni of 85/15≥Mn/Ni≥65/35 and a Fe content of 30 parts by mole or less when a total molar amount of Mn and Ni is regarded as 100 parts by mole, and has a peak with a local maximum value of around 29° to 31° in its X-ray diffraction pattern, a half width of which peak is 0.15 or more. The transistor is electrically connected with either one of the pair of electrode layers.
Abstract:
A dielectric resin composition for a film capacitor is a mixture containing an organic material A and an organic material B. The organic material A includes at least two kinds of organic material components A1, A2, . . . having reactive groups (for example, OH, NCO) that cross-link each other. The organic material B does not have a reactive site capable of reacting with the organic material A and has a dielectric loss tan δ of 0.3% or less at a temperature of 125° C. The mixture has a glass transition temperature of 130° C. or higher and preferably 280° C. or lower.
Abstract:
A temperature sensor that includes an organic-inorganic composite negative temperature coefficient thermistor and a transistor. The organic-inorganic composite negative temperature coefficient thermistor includes a thermistor layer which includes spinel-type semiconductor ceramic composition powder containing Mn, Ni and Fe and an organic polymer component, and a pair of electrode layers. The semiconductor ceramic composition powder has a molar ratio of Mn to Ni of 85/15≥Mn/Ni≥65/35 and a Fe content of 30 parts by mole or less when a total molar amount of Mn and Ni is regarded as 100 parts by mole, and has a peak with a local maximum value of around 29° to 31° in its X-ray diffraction pattern, a half width of which peak is 0.15 or more. The transistor is electrically connected with either one of the pair of electrode layers.
Abstract:
A temperature sensor that includes a first electrode layer, a second electrode layer, and a thermistor layer between the first and second electrode layers. The thermistor layer includes a spinel-type semiconductor ceramic composition powder containing Mn, Ni, and Fe, and an organic polymer component. In the semiconductor ceramic composition powder, the molar ratio of Mn to Ni is 85/15≥Mn/Ni≥65/35, and when the total molar quantity of Mn and Ni is 100 parts by mole, the content of Fe is 30 parts by mole or less, and the semiconductor ceramic composition powder is 2 μm or less in particle size.
Abstract:
A resin composition constituting dielectric resin films of a film capacitor includes a first atom group including at least one functional group selected from among a methylene group, an aromatic ring and an ether group and having a relatively small molar polarizability, and a second atom group including at least one functional group selected from among a hydroxyl group, an amino group and a carbonyl group and having a relatively large molar polarizability. The resin composition satisfies the condition that a value calculated from the formula (sum of absorption band intensities of first atom group)/(sum of absorption band intensities of second atom group) is 1.0 or more. Herein, as absorption band intensities of the functional groups, peak intensities detected in specific wavenumber ranges are employed.
Abstract:
A dielectric resin composition for a film capacitor is a mixture containing an organic material A and an organic material B. The organic material A includes at least two kinds of organic material components A1, A2, . . . having reactive groups (for example, OH, NCO) that cross-link each other. The organic material B does not have a reactive site capable of reacting with the organic material A and has a dielectric loss tan δ of 0.3% or less at a temperature of 125° C. The mixture has a glass transition temperature of 130° C. or higher and preferably 280° C. or lower.