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公开(公告)号：US11336234B2
公开(公告)日：2022-05-17
申请号：US16829776
申请日：2020-03-25
发明人： Takashi Yamada , Yuuri Honda , Satoshi Tanaka
摘要： A power amplifier circuit includes a power amplifier that amplifies an input signal and outputs the amplified signal from an output terminal thereof, a first filter circuit that has a frequency characteristic that attenuates an Nth-order harmonic of the amplified signal, N that is an integer greater than or equal to 2, and a second filter circuit that has a frequency characteristic that attenuates the Nth-order harmonic of the amplified signal. The first filter circuit includes a first capacitor and a first inductor. The first capacitor and the first inductor are connected in series between the output terminal and ground. The second filter circuit includes a second capacitor and a second inductor. The second capacitor and the second inductor are connected in series between the output terminal and ground.
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公开(公告)号：US20180041169A1
公开(公告)日：2018-02-08
申请号：US15684258
申请日：2017-08-23
发明人： Kazuma Sugiura , Takashi Yamada , Norio Hayashi , Satoshi Tanaka , Kenichi Shimamoto , Kazuo Watanabe
CPC分类号： H03F1/0205 , H03F1/0222 , H03F3/19 , H03F3/211 , H03F3/245 , H03F2200/451 , H03F2200/516 , H03F2200/555
摘要： A power amplifier has improved power added efficiency at high output power. The power amplifier includes: a first transistor for amplifying an input signal input to the base thereof and outputting the amplified signal from the collector thereof; a second transistor with power-supply voltage applied to the collector thereof to supply bias voltage or bias current from the emitter thereof to the base of the first transistor; a third transistor whose collector is connected to the collector of the first transistor to amplify the input signal input to the base thereof and output the amplified signal from a collector thereof; a fourth transistor whose base and collector are connected to supply bias from the emitter thereof to the base of the third transistor; and a first resistor with bias control voltage applied to one end thereof and the other end connected to the bases of the second and fourth transistors.
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公开(公告)号：US20160134241A1
公开(公告)日：2016-05-12
申请号：US14862865
申请日：2015-09-23
发明人： Kazuma Sugiura , Takashi Yamada , Norio Hayashi , Satoshi Tanaka , Kenichi Shimamoto , Kazuo Watanabe
CPC分类号： H03F1/0205 , H03F1/0222 , H03F3/19 , H03F3/211 , H03F3/245 , H03F2200/451 , H03F2200/516 , H03F2200/555
摘要： A power amplifier has improved power added efficiency at high output power. The power amplifier includes: a first transistor for amplifying an input signal input to the base thereof and outputting the amplified signal from the collector thereof; a second transistor with power-supply voltage applied to the collector thereof to supply bias voltage or bias current from the emitter thereof to the base of the first transistor; a third transistor whose collector is connected to the collector of the first transistor to amplify the input signal input to the base thereof and output the amplified signal from a collector thereof; a fourth transistor whose base and collector are connected to supply bias from the emitter thereof to the base of the third transistor; and a first resistor with bias control voltage applied to one end thereof and the other end connected to the bases of the second and fourth transistors.
摘要翻译： 功率放大器在高输出功率下提高了功率附加效率。 功率放大器包括：第一晶体管，用于放大输入到其基极的输入信号并从其集电极输出放大的信号; 第二晶体管，其具有施加到其集电极的电源电压，以将偏置电压或偏置电流从其发射极提供给第一晶体管的基极; 第三晶体管，其集电极连接到第一晶体管的集电极，以放大输入到其基极的输入信号，并从其集电极输出放大的信号; 第四晶体管，其基极和集电极连接以从其发射极向第三晶体管的基极提供偏置; 以及具有施加到其一端的偏置控制电压并且另一端连接到第二和第四晶体管的基极的第一电阻器。
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公开(公告)号：US10236828B2
公开(公告)日：2019-03-19
申请号：US15684258
申请日：2017-08-23
发明人： Kazuma Sugiura , Takashi Yamada , Norio Hayashi , Satoshi Tanaka , Kenichi Shimamoto , Kazuo Watanabe
摘要： A power amplifier has improved power added efficiency at high output power. The power amplifier includes: a first transistor for amplifying an input signal input to the base thereof and outputting the amplified signal from the collector thereof; a second transistor with power-supply voltage applied to the collector thereof to supply bias voltage or bias current from the emitter thereof to the base of the first transistor; a third transistor whose collector is connected to the collector of the first transistor to amplify the input signal input to the base thereof and output the amplified signal from a collector thereof; a fourth transistor whose base and collector are connected to supply bias from the emitter thereof to the base of the third transistor; and a first resistor with bias control voltage applied to one end thereof and the other end connected to the bases of the second and fourth transistors.
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公开(公告)号：US09768729B2
公开(公告)日：2017-09-19
申请号：US14862865
申请日：2015-09-23
发明人： Kazuma Sugiura , Takashi Yamada , Norio Hayashi , Satoshi Tanaka , Kenichi Shimamoto , Kazuo Watanabe
CPC分类号： H03F1/0205 , H03F1/0222 , H03F3/19 , H03F3/211 , H03F3/245 , H03F2200/451 , H03F2200/516 , H03F2200/555
摘要： A power amplifier has improved power added efficiency at high output power. The power amplifier includes: a first transistor for amplifying an input signal input to the base thereof and outputting the amplified signal from the collector thereof; a second transistor with power-supply voltage applied to the collector thereof to supply bias voltage or bias current from the emitter thereof to the base of the first transistor; a third transistor whose collector is connected to the collector of the first transistor to amplify the input signal input to the base thereof and output the amplified signal from a collector thereof; a fourth transistor whose base and collector are connected to supply bias from the emitter thereof to the base of the third transistor; and a first resistor with bias control voltage applied to one end thereof and the other end connected to the bases of the second and fourth transistors.
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公开(公告)号：US12119793B2
公开(公告)日：2024-10-15
申请号：US17193494
申请日：2021-03-05
CPC分类号： H03F3/21 , H01L23/49822 , H01L23/642 , H01L23/645 , H01L24/16 , H01L25/16 , H03F1/56 , H01L2224/16014 , H01L2224/16227 , H03F2200/387 , H03F2200/447
摘要： A power amplifier module includes a substrate, an amplifier circuit including a plurality of transistors to be mounted on the substrate and a bump connected to the plurality of transistors, a harmonic termination circuit and an output matching circuit that are disposed in or on the substrate and configured to be electrically connected to the amplifier circuit, a connection pad disposed on the substrate and configured to be connected to the bump, and a plurality of connection wiring lines branching from the connection pad. The plurality of connection wiring lines include at least a first connection wiring line that connects the connection pad and the harmonic termination circuit to each other, a second connection wiring line that connects the connection pad and the output matching circuit to each other, and a third connection wiring line that connects the connection pad and an external power supply to each other.
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公开(公告)号：US10692982B2
公开(公告)日：2020-06-23
申请号：US16281162
申请日：2019-02-21
发明人： Takashi Yamada
IPC分类号： H03F1/32 , H01L29/417 , H03F3/195 , H03F3/213 , H01L29/737 , H03F1/56 , H03F1/26 , H03F3/24
摘要： A semiconductor apparatus includes the following elements. A substrate includes a ground portion to which a ground potential is supplied. A semiconductor chip is mounted on the substrate and includes first and second output terminals, a first terminator, and a ground terminal. First and second amplifiers are respectively formed in first and second regions of the semiconductor chip and respectively amplify first and second input signals of first and second frequency bands and output first and second amplified signals from the first and second output terminals via first and second output wires. A first harmonic termination circuit includes a first wire which electrically connects the first terminator and the ground portion. A ground wire is disposed between the first wire and the second output wire in a plan view of a main surface of the semiconductor chip and electrically connects the ground terminal and the ground portion.
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公开(公告)号：US11152893B2
公开(公告)日：2021-10-19
申请号：US16589332
申请日：2019-10-01
发明人： Takashi Yamada , Toshikazu Terashima , Yuuki Oomae
摘要： A power amplifying circuit includes a first amplifying unit that amplifies a first radio-frequency signal and a second amplifying unit that amplifies a second radio-frequency signal. The first amplifying unit includes a first matching circuit that performs impedance matching for a circuit in a preceding stage, and a first amplifying circuit that amplifies the first radio-frequency signal that has passed through the first matching circuit. The second amplifying unit includes a second matching circuit that performs impedance matching for the circuit in the preceding stage, a resistor including a first end and a second end, the first end being electrically connected to the second matching circuit, and a second amplifying circuit that is electrically connected to the second end of the resistor and that amplifies the second radio-frequency signal that has passed through the resistor.
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公开(公告)号：US20190068132A1
公开(公告)日：2019-02-28
申请号：US16112998
申请日：2018-08-27
发明人： Takashi Yamada , Yuuri Honda , Satoshi Tanaka
摘要： A power amplifier circuit includes a power amplifier that amplifies an input signal and outputs the amplified signal from an output terminal thereof, a first filter circuit that has a frequency characteristic that attenuates an Nth-order harmonic of the amplified signal, N that is an integer greater than or equal to 2, and a second filter circuit that has a frequency characteristic that attenuates the Nth-order harmonic of the amplified signal. The first filter circuit includes a first capacitor and a first inductor. The first capacitor and the first inductor are connected in series between the output terminal and ground. The second filter circuit includes a second capacitor and a second inductor. The second capacitor and the second inductor are connected in series between the output terminal and ground.
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