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1.发明授权Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same 有权多异质结纳米颗粒，其制备方法和包含其的制品公开(公告)号：US09123638B2
公开(公告)日：2015-09-01
申请号：US13834381
申请日：2013-03-15
申请人： Moonsub Shim , Nuri Oh , You Zhai , Sooji Nam , Peter Trefonas , Kishori Deshpande , Jake Joo
发明人： Moonsub Shim , Nuri Oh , You Zhai , Sooji Nam , Peter Trefonas , Kishori Deshpande , Jake Joo
IPC分类号： H01L29/06 , H01L29/22 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L31/0296 , H01L31/0352 , H01L29/12 , H01L33/06 , H01L51/50 , B82Y20/00
CPC分类号： H01L33/06 , B82Y10/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H01L29/0669 , H01L29/068 , H01L29/127 , H01L29/22 , H01L31/0296 , H01L31/035218 , H01L31/035227 , H01L33/0083 , H01L33/28 , H01L51/50 , H01L51/502 , Y10S977/774 , Y10S977/95
摘要： Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; a first node that comprises a first semiconductor; where the first node contacts a radial surface of the one-dimensional semiconducting nanoparticle producing a first heterojunction at the point of contact; and a second node that comprises a second semiconductor; where the second node contacts the radial surface of the one-dimensional semiconducting nanoparticle producing a second heterojunction at the point of contact; where the first heterojunction is compositionally different from the second heterojunction.
摘要翻译： 本文公开了包含具有第一端和第二端的一维半导体纳米颗粒的半导体纳米颗粒; 第二端与第一端相反; 包括第一半导体的第一节点; 其中第一节点接触一维半导体纳米颗粒的径向表面，在接触点处产生第一异质结; 以及包括第二半导体的第二节点; 其中第二节点接触一维半导体纳米颗粒的径向表面，在接触点处产生第二异质结; 其中第一异质结在组成上不同于第二异质结。
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2.发明申请MULTI-HETEROJUNCTION NANOPARTICLES, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME 审中-公开多功能纳米粒子及其制造方法及其相关文章公开(公告)号：US20150243837A1
公开(公告)日：2015-08-27
申请号：US13834325
申请日：2013-03-15
申请人： Moonsub Shim , Nuri Oh , You Zhai , Sooji Nam , Peter Trefonas , Kishori Deshpande , Jake Joo
发明人： Moonsub Shim , Nuri Oh , You Zhai , Sooji Nam , Peter Trefonas , Kishori Deshpande , Jake Joo
CPC分类号： H01L33/06 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L29/0669 , H01L29/068 , H01L29/127 , H01L33/0083 , H01L33/18 , H01L33/28 , H01L51/502
摘要： Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; a first endcap contacting one of the first end or the second end; where the first endcap comprises a first semiconductor and where the first endcap extends from the one-dimensional nanoparticle to form a first nanocrystal heterojunction; and a second endcap that contacts the first endcap; where the second endcap comprises a second semiconductor and where the second endcap extends from the first endcap to form a second nanocrystal heterojunction; and where the first semiconductor is different from the second semiconductor.
摘要翻译： 本文公开了包含具有第一端和第二端的一维半导体纳米颗粒的半导体纳米颗粒; 第一端盖接触第一端或第二端中的一个; 其中所述第一端盖包括第一半导体，并且其中所述第一端帽从所述一维纳米颗粒延伸以形成第一纳米晶体异质结; 以及与所述第一端盖接触的第二端盖; 其中所述第二端盖包括第二半导体，并且其中所述第二端盖从所述第一端盖延伸以形成第二纳米晶体异质结; 并且其中第一半导体与第二半导体不同。
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3.发明申请公开(公告)号：US20140264259A1
公开(公告)日：2014-09-18
申请号：US13834381
申请日：2013-03-15
申请人： Moonsub Shim , Nuri Oh , You Zhai , Sooji Nam , Peter Trefonas , Kishori Deshpande , Jake Joo
发明人： Moonsub Shim , Nuri Oh , You Zhai , Sooji Nam , Peter Trefonas , Kishori Deshpande , Jake Joo
CPC分类号： H01L33/06 , B82Y10/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H01L29/0669 , H01L29/068 , H01L29/127 , H01L29/22 , H01L31/0296 , H01L31/035218 , H01L31/035227 , H01L33/0083 , H01L33/28 , H01L51/50 , H01L51/502 , Y10S977/774 , Y10S977/95
摘要： Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; a first node that comprises a first semiconductor; where the first node contacts a radial surface of the one-dimensional semiconducting nanoparticle producing a first heterojunction at the point of contact; and a second node that comprises a second semiconductor; where the second node contacts the radial surface of the one-dimensional semiconducting nanoparticle producing a second heterojunction at the point of contact; where the first heterojunction is compositionally different from the second heterojunction.
摘要翻译： 本文公开了包含具有第一端和第二端的一维半导体纳米颗粒的半导体纳米颗粒; 第二端与第一端相反; 包括第一半导体的第一节点; 其中第一节点接触一维半导体纳米颗粒的径向表面，在接触点处产生第一异质结; 以及包括第二半导体的第二节点; 其中第二节点接触一维半导体纳米颗粒的径向表面，在接触点处产生第二异质结; 其中第一异质结在组成上不同于第二异质结。
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4.发明授权Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same 有权多异质结纳米颗粒，其制备方法和包含其的制品公开(公告)号：US08937294B2
公开(公告)日：2015-01-20
申请号：US13834363
申请日：2013-03-15
申请人： Moonsub Shim , Nuri Oh , You Zhai , Sooji Nam , Peter Trefonas , Kishori Deshpande , Jake Joo
发明人： Moonsub Shim , Nuri Oh , You Zhai , Sooji Nam , Peter Trefonas , Kishori Deshpande , Jake Joo
IPC分类号： H01L33/06 , H01L29/06 , H01L21/02 , H01L31/0352
CPC分类号： H01L33/06 , B82Y10/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H01L21/02557 , H01L21/0256 , H01L21/02601 , H01L21/02603 , H01L21/02606 , H01L21/02628 , H01L29/0669 , H01L29/068 , H01L29/125 , H01L29/127 , H01L29/225 , H01L31/0296 , H01L31/035218 , H01L31/035227 , H01L31/1828 , H01L33/0083 , H01L33/18 , H01L33/28 , H01L33/502 , H01L51/0037 , H01L51/0042 , H01L51/502 , H01L51/5072 , H01L2251/5369 , Y10S977/762 , Y10S977/825 , Y10S977/949
摘要： Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other.
摘要翻译： 本文公开了包含具有第一端和第二端的一维半导体纳米颗粒的半导体纳米颗粒; 第二端与第一端相反; 和两个第一端盖，其中一个端接触第一端，另一端接触一维半导体纳米颗粒的第二端; 其中与第一端接触的第一端帽包括第一半导体，并且其中第一端帽从一维半导体纳米颗粒的第一端延伸以形成第一纳米晶体异质结; 其中与第二端接触的第一端盖包括第二半导体; 其中第一端帽从一维半导体纳米颗粒的第二端延伸以形成第二纳米晶体异质结; 并且其中第一半导体和第二半导体在化学上彼此不同。
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5.发明申请公开(公告)号：US20140264258A1
公开(公告)日：2014-09-18
申请号：US13834363
申请日：2013-03-15
申请人： Moonsub Shim , Nuri Oh , You Zhai , Sooji Nam , Peter Trefonas , Kishori Deshpande , Jake Joo
发明人： Moonsub Shim , Nuri Oh , You Zhai , Sooji Nam , Peter Trefonas , Kishori Deshpande , Jake Joo
IPC分类号： H01L29/06 , H01L21/02 , H01L31/0352 , H01L33/06
CPC分类号： H01L33/06 , B82Y10/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H01L21/02557 , H01L21/0256 , H01L21/02601 , H01L21/02603 , H01L21/02606 , H01L21/02628 , H01L29/0669 , H01L29/068 , H01L29/125 , H01L29/127 , H01L29/225 , H01L31/0296 , H01L31/035218 , H01L31/035227 , H01L31/1828 , H01L33/0083 , H01L33/18 , H01L33/28 , H01L33/502 , H01L51/0037 , H01L51/0042 , H01L51/502 , H01L51/5072 , H01L2251/5369 , Y10S977/762 , Y10S977/825 , Y10S977/949
摘要： Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other.
摘要翻译： 本文公开了包含具有第一端和第二端的一维半导体纳米颗粒的半导体纳米颗粒; 第二端与第一端相反; 和两个第一端盖，其中一个端接触第一端，另一端接触一维半导体纳米颗粒的第二端; 其中与第一端接触的第一端帽包括第一半导体，并且其中第一端帽从一维半导体纳米颗粒的第一端延伸以形成第一纳米晶体异质结; 其中与第二端接触的第一端盖包括第二半导体; 其中第一端帽从一维半导体纳米颗粒的第二端延伸以形成第二纳米晶体异质结; 并且其中第一半导体和第二半导体在化学上彼此不同。
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公开(公告)号：US08367035B2
公开(公告)日：2013-02-05
申请号：US13596343
申请日：2012-08-28
申请人： John A. Rogers , Coskun Kocabas , Moonsub Shim , Seong Jun Kang , Jang-Ung Park
发明人： John A. Rogers , Coskun Kocabas , Moonsub Shim , Seong Jun Kang , Jang-Ung Park
CPC分类号： B82Y40/00 , B82Y10/00 , B82Y30/00 , C01B32/162 , C01B2202/02 , C01B2202/08 , C01B2202/34 , H01L51/0012 , H01L51/0048 , H01L51/0541 , H01L51/0545
摘要： The present invention provides arrays of longitudinally aligned carbon nanotubes having specified positions, nanotube densities and orientations, and corresponding methods of making nanotube arrays using guided growth and guided deposition methods. Also provided are electronic devices and device arrays comprising one or more arrays of longitudinally aligned carbon nanotubes including multilayer nanotube array structures and devices.
摘要翻译： 本发明提供了具有特定位置，纳米管密度和取向的纵向排列的碳纳米管的阵列，以及使用引导生长和引导沉积方法制备纳米管阵列的相应方法。 还提供了包括一个或多个纵向排列的碳纳米管阵列的电子器件和器件阵列，其包括多层纳米管阵列结构和器件。
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公开(公告)号：US06939604B1
公开(公告)日：2005-09-06
申请号：US09694090
申请日：2000-10-19
IPC分类号： H01L21/20 , H01L21/36 , H01L31/0352 , H01L31/18 , H01L33/02 , B32B5/16 , B32B15/02 , H01L21/04 , H01L31/09
CPC分类号： H01L21/0237 , H01L21/02551 , H01L21/02557 , H01L21/0256 , H01L21/02601 , H01L21/02628 , H01L31/0352 , H01L31/1828 , H01L33/02 , H01L2924/0002 , Y02E10/543 , Y02P70/521 , Y10T428/25 , Y10T428/2982 , H01L2924/00
摘要： A particle, includes a semiconductor nanocrystal. The nanocrystal is doped.
摘要翻译： 颗粒包括半导体纳米晶体。 纳米晶体掺杂。
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公开(公告)号：US20120321785A1
公开(公告)日：2012-12-20
申请号：US13596343
申请日：2012-08-28
申请人： John A. Rogers , Coskun Kocabas , Moonsub Shim , Seong Jun Kang , Jang-Ung Park
发明人： John A. Rogers , Coskun Kocabas , Moonsub Shim , Seong Jun Kang , Jang-Ung Park
CPC分类号： B82Y40/00 , B82Y10/00 , B82Y30/00 , C01B32/162 , C01B2202/02 , C01B2202/08 , C01B2202/34 , H01L51/0012 , H01L51/0048 , H01L51/0541 , H01L51/0545
摘要： The present invention provides arrays of longitudinally aligned carbon nanotubes having specified positions, nanotube densities and orientations, and corresponding methods of making nanotube arrays using guided growth and guided deposition methods. Also provided are electronic devices and device arrays comprising one or more arrays of longitudinally aligned carbon nanotubes including multilayer nanotube array structures and devices.
摘要翻译： 本发明提供了具有特定位置，纳米管密度和取向的纵向排列的碳纳米管的阵列，以及使用引导生长和引导沉积方法制备纳米管阵列的相应方法。 还提供了包括一个或多个纵向排列的碳纳米管阵列的电子器件和器件阵列，其包括多层纳米管阵列结构和器件。
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公开(公告)号：US07227177B2
公开(公告)日：2007-06-05
申请号：US11111153
申请日：2005-04-21
CPC分类号： H01L21/0237 , H01L21/02551 , H01L21/02557 , H01L21/0256 , H01L21/02601 , H01L21/02628 , H01L31/0352 , H01L31/1828 , H01L33/02 , H01L2924/0002 , Y02E10/543 , Y02P70/521 , Y10T428/25 , Y10T428/2982 , H01L2924/00
摘要： A particle, includes a semiconductor nanocrystal. The nanocrystal is doped.
摘要翻译： 颗粒包括半导体纳米晶体。 纳米晶体掺杂。
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公开(公告)号：US20050189534A1
公开(公告)日：2005-09-01
申请号：US11111153
申请日：2005-04-21
CPC分类号： H01L21/0237 , H01L21/02551 , H01L21/02557 , H01L21/0256 , H01L21/02601 , H01L21/02628 , H01L31/0352 , H01L31/1828 , H01L33/02 , H01L2924/0002 , Y02E10/543 , Y02P70/521 , Y10T428/25 , Y10T428/2982 , H01L2924/00
摘要： A particle, includes a semiconductor nanocrystal. The nanocrystal is doped.
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