公开(公告)号：US20230070214A1

公开(公告)日：2023-03-09

申请号：US17795536

申请日：2020-03-13

申请人： Mitsubishi Electric Corporation

发明人： Hodaka ROKUBUICHI ,  Kei YAMAMOTO ,  Ken SAKAMOTO

IPC分类号： H01L23/495 ,  H01L23/31 ,  H01L23/00

摘要： A semiconductor device includes: a semiconductor element, a first lead frame, a second lead frame, and a thermally conductive member; and a sealing member sealing them. The first lead frame includes: a first portion exposed from a first side surface of the sealing member; and a second portion located closer to a lower surface of the sealing member than the first portion in a second direction crossing the lower surface. The semiconductor device further includes an intermediate frame which is located between the second portion and the fifth portion at least in the second direction. A distance, in the first direction, between the second portion and the intermediate frame is shorter than a distance, in the second direction, between an upper surface of the first portion and the upper surface of the second portion.

公开(公告)号：US20200176273A1

公开(公告)日：2020-06-04

申请号：US16500856

申请日：2017-08-23

申请人： Mitsubishi Electric Corporation

发明人： Ken SAKAMOTO

IPC分类号： H01L21/48 ,  H01L21/56

摘要： A heat sink (4) having a step in a bottom surface corner and a rectangular planar shape is disposed in an interior of a cavity (5) of a metal mold (1) and a first pin (2) is caused to project from a bottom surface of the cavity (5) to position the heat sink (4). A second pin (3) projecting from the bottom surface of the cavity (5) is disposed at the step of the positioned heat sink (4). After the heat sink (4) is positioned, the first pin (2) is lowered to the bottom surface of the cavity (5) and the heat sink (4) is sealed with the mold resin (10) with the second pin (3) being left projecting.

公开(公告)号：US20200091047A1

公开(公告)日：2020-03-19

申请号：US16686971

申请日：2019-11-18

申请人： Mitsubishi Electric Corporation

发明人： Ken SAKAMOTO ,  Taketoshi SHIKANO ,  Hiroshi KAWASHIMA

IPC分类号： H01L23/495 ,  H01L21/56 ,  H01L21/48 ,  H01L23/00

摘要： A first lead terminal, a second lead terminal provided parallel to the first lead terminal, and a tie bar connecting the first lead terminal and the second lead terminal are provided. The tie bar includes a first narrow-width section touching the first lead terminal, a second narrow-width section touching the second lead terminal, and a wide-width section having a larger width than the first narrow-width section and the second narrow-width section and connecting the first narrow-width section and the second narrow-width section. The wide-width section has a through-hole formed between the first narrow-width section and the second narrow-width section.

公开(公告)号：US20190043788A1

公开(公告)日：2019-02-07

申请号：US16070352

申请日：2016-02-08

申请人： Mitsubishi Electric Corporation

发明人： Takamasa IWAI ,  Satoshi KONDO ,  Hiroshi KAWASHIMA ,  Junji FUJINO ,  Ken SAKAMOTO

IPC分类号： H01L23/495

CPC分类号： H01L23/49524 ,  H01L23/49541 ,  H01L23/49544 ,  H01L23/49551 ,  H01L23/49575 ,  H01L23/49582 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A leadframe of a semiconductor device includes a die pad, first and second suspension leads, and a frame. The main surfaces of the die pad and the frame are located on different planes, and the die pad and the frame are connected to each other by the first and second suspension leads. A first boundary line between the first suspension lead and the die pad runs on a straight line different from a second boundary line between the second suspension lead and the die pad. A third boundary line between the first suspension lead and the frame runs on a straight line different from a fourth boundary line between the second suspension lead and the frame.

公开(公告)号：US20160343644A1

公开(公告)日：2016-11-24

申请号：US15112890

申请日：2014-05-12

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Hiroshi KAWASHIMA ,  Ken SAKAMOTO ,  Taketoshi SHIKANO

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56

CPC分类号： H01L24/49 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49537 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/291 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48108 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49052 ,  H01L2224/49171 ,  H01L2224/49505 ,  H01L2224/73265 ,  H01L2924/10161 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00

摘要： A power semiconductor element is fixed on a die pad of the lead frame. A metal plate is bonded to a lower surface of the die pad via an insulating film. The inner lead etc. are disposed in a cavity between a lower mold and an upper mold and are encapsulated with an encapsulation resin. The lower mold has a stepped portion provided in a bottom surface of the cavity below the inner lead. A height of an upper surface of the stepped portion is larger than a height of an upper surface of the power semiconductor element disposed in the cavity. When an encapsulation resin is injected into the cavity, a lower surface of the metal plate is in contact with the bottom surface of the cavity, and the encapsulation resin flows downward from above the stepped portion toward the upper surface of the power semiconductor element.

摘要翻译： 功率半导体元件固定在引线框的芯片焊盘上。 金属板经由绝缘膜与芯片焊盘的下表面接合。 内引线等设置在下模和上模之间的空腔中，并用封装树脂封装。 下模具有设置在内引线下方的空腔的底表面中的台阶部分。 阶梯部的上表面的高度大于设置在空腔中的功率半导体元件的上表面的高度。 当封装树脂注入到空腔中时，金属板的下表面与空腔的底表面接触，并且封装树脂从台阶部分的上方朝着功率半导体元件的上表面向下流动。

公开(公告)号：US20240266194A1

公开(公告)日：2024-08-08

申请号：US18565355

申请日：2021-06-09

申请人： Mitsubishi Electric Corporation

发明人： Ken SAKAMOTO ,  Keitaro ICHIKAWA

IPC分类号： H01L21/67 ,  H01L21/56

CPC分类号： H01L21/67126 ,  H01L21/565

摘要： An object is to provide a technology for enabling reduction in cracks in cut portions of adjacent molded parts when a runner part that connects the molded parts is cut and removed. A semiconductor manufacturing apparatus includes: a plurality of cavities filled with a molding resin to form a plurality of respective molded parts; and at least one runner through which the molding resin flows, the at least one runner having one end connected to a gate of one of the cavities, and an other end connected to a gate of an other of the cavities, the cavities being adjacent to each other, wherein an upper end of the at least one runner on one end side is higher than an upper end of the at least one runner on an other end side.

公开(公告)号：US20220336402A1

公开(公告)日：2022-10-20

申请号：US17765439

申请日：2019-12-04

申请人： Mitsubishi Electric Corporation

发明人： Haruko HITOMI ,  Kozo HARADA ,  Ken SAKAMOTO

IPC分类号： H01L23/00

摘要： A semiconductor device includes a semiconductor element, at least one first resin member, and at least one conducting wire. The semiconductor element includes a front electrode and a body part. The at least one first resin member is disposed on a second surface of the front electrode. The at least one conducting wire includes a joining part. The at least one first resin member includes a convex part. The convex part protrudes from the front electrode in a direction away from the body part. The at least one conducting wire includes a concave part. The concave part is adjacent to the joining part. The concave part extends along the convex part. The concave part is fitted to the convex part.

公开(公告)号：US20170294369A1

公开(公告)日：2017-10-12

申请号：US15508118

申请日：2014-11-07

申请人： Mitsubishi Electric Corporation

发明人： Hiroshi KAWASHIMA ,  Ken SAKAMOTO ,  Satoshi KONDO ,  Taketoshi SHIKANO ,  Yoshihiro TAKAI ,  Claudio FELICIANI

IPC分类号： H01L23/495 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H01L23/498

CPC分类号： H01L23/49537 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49513 ,  H01L23/49541 ,  H01L23/49551 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49861 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L25/07 ,  H01L25/18 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48108 ,  H01L2224/48137 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A power semiconductor device includes a power semiconductor element, a controlling element, a first lead frame and a second lead frame, respectively, a first metal wire electrically connecting the power semiconductor element and the first lead frame, and a sealing body covering these components. The first lead frame includes a first inner lead having a connecting surface to which one end of the first metal wire is connected. Among surfaces of the sealing body, in a side surface, a resin inlet mark is formed in a side surface portion from which the first lead frame and the second lead frame do not project, the resin inlet mark being greater in surface roughness than another area. The resin inlet mark is formed opposite to a side where the first metal wire is positioned on the connecting surface when seen in the direction along the mounting surface.

公开(公告)号：US20170004981A1

公开(公告)日：2017-01-05

申请号：US15113472

申请日：2014-05-14

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Ken SAKAMOTO

IPC分类号： H01L21/56 ,  H01L21/48 ,  H01L21/78 ,  H01L23/495 ,  H01L23/31

CPC分类号： H01L21/565 ,  H01L21/4825 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/3735 ,  H01L23/3737 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49568 ,  H01L23/49575 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： It is an object to provide a method for manufacturing a semiconductor device which can reduce degradation in package strength and a manufacturing cost, and promote miniaturization of a package. A method for manufacturing a semiconductor device includes steps of (a) preparing a lead frame having a die pad on which a semiconductor element is mounted, (b) placing a first resin which is granular in a mold, (c) placing the lead frame in the mold in such a manner that the first resin comes into contact with a lower side of the die pad, (d) filling the mold with a second resin on an upper side of the first resin in the mold, and (e) curing the first resin and the second resin, to mold the first resin and the second resin.

摘要翻译： 本发明的目的是提供一种能够降低封装强度的降低和制造成本的半导体装置的制造方法，促进封装的小型化。 一种制造半导体器件的方法包括以下步骤：（a）制备具有其上安装有半导体元件的管芯焊盘的引线框架，（b）将颗粒状的第一树脂放置在模具中，（c）将引线框架 在模具中使第一树脂与模片垫的下侧接触，（d）在模具中的第一树脂的上侧用第二树脂填充模具，（e）固化 第一树脂和第二树脂，以模制第一树脂和第二树脂。

公开(公告)号：US20160079143A1

公开(公告)日：2016-03-17

申请号：US14889482

申请日：2013-09-11

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Ken SAKAMOTO

IPC分类号： H01L23/367 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/373

CPC分类号： H01L23/3675 ,  H01L21/4878 ,  H01L21/4882 ,  H01L21/565 ,  H01L23/16 ,  H01L23/3107 ,  H01L23/367 ,  H01L23/3735 ,  H01L23/433 ,  H01L23/4334 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/49109 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： In the present invention, a heat spreader has a sagging surface or a C surface being a chamfered portion at an outer peripheral end portion of a back surface thereof. A plurality of power elements formed into chips are mounted on a surface of the heat spreader with a solder therebetween, and an insulating sheet portion is located on the back surface side of the heat spreader. The insulating sheet portion has a laminated structure of an insulating layer and a metal foil, and the insulating layer being the upper layer is closely bonded to the back surface of the heat spreader. A space region between the sagging surface and the insulating sheet portion is filled with a molding resin.

摘要翻译： 在本发明中，散热器在其背面的外周端部具有下垂面或C面为倒角部。 形成为芯片的多个功率元件以其间的焊料安装在散热器的表面上，并且绝热片部分位于散热器的背面侧。 绝缘片部分具有绝缘层和金属箔的叠层结构，并且作为上层的绝缘层紧密地结合到散热器的背面。 在下垂表面和绝缘片部分之间的空间区域填充有模制树脂。