- 专利标题: SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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申请号: US17765439申请日: 2019-12-04
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公开(公告)号: US20220336402A1公开(公告)日: 2022-10-20
- 发明人: Haruko HITOMI , Kozo HARADA , Ken SAKAMOTO
- 申请人: Mitsubishi Electric Corporation
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 国际申请: PCT/JP2019/047510 WO 20191204
- 主分类号: H01L23/00
- IPC分类号: H01L23/00
摘要:
A semiconductor device includes a semiconductor element, at least one first resin member, and at least one conducting wire. The semiconductor element includes a front electrode and a body part. The at least one first resin member is disposed on a second surface of the front electrode. The at least one conducting wire includes a joining part. The at least one first resin member includes a convex part. The convex part protrudes from the front electrode in a direction away from the body part. The at least one conducting wire includes a concave part. The concave part is adjacent to the joining part. The concave part extends along the convex part. The concave part is fitted to the convex part.
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