公开(公告)号：US12148580B2

公开(公告)日：2024-11-19

申请号：US18046774

申请日：2022-10-14

Applicant: Menlo Microsystems, Inc.

Inventor： Andrew Minnick ,  Christopher F. Keimel ,  Xu Zhu

IPC: H01H1/0237 ,  B81C1/00 ,  H01H49/00 ,  H01H59/00 ,  H01L21/00 ,  H01H1/00

Abstract: A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum-group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.

公开(公告)号：US11676872B2

公开(公告)日：2023-06-13

申请号：US16897788

申请日：2020-06-10

Applicant: Menlo Microsystems, Inc.

Inventor： Jaeseok Jeon ,  Christopher F. Keimel ,  Chris Nassar ,  Andrew Minnick

IPC: H01L23/15 ,  C23C16/40 ,  C23C16/455 ,  H01L23/29

CPC classification number: H01L23/15 ,  C23C16/402 ,  C23C16/45525 ,  H01L23/291

Abstract: A through-glass via (TGV) formed in a glass substrate may comprise a metal plating layer formed in the TGV. The TGV may have a three-dimensional (3D) topology through the glass substrate and the metal plating layer conformally covering the 3D topology. The TGV may further comprise a barrier layer disposed over the metal plating layer, and a metallization layer disposed over the barrier layer. The metallization layer may be electrically coupled to the metal plating layer through the barrier layer. The barrier layer may comprise a metal-nitride film disposed on the metal plating layer that is electrically coupled to the metallization layer. The barrier layer may comprise a metal film disposed over the metal plating layer and over a portion of glass surrounding the TGV, and an electrically-insulating film disposed upon the metal film, the electrically-insulating film completely overlapping the metal plating layer and partially overlapping the metal film.

公开(公告)号：US20230064520A1

公开(公告)日：2023-03-02

申请号：US18046774

申请日：2022-10-14

Applicant: Menlo Microsystems, Inc.

Inventor： Andrew Minnick ,  Christopher F. Keimel ,  Xu Zhu

IPC: H01H1/0237 ,  H01H49/00 ,  H01H59/00 ,  H01L21/00

Abstract: A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum-group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.

公开(公告)号：US20210391228A1

公开(公告)日：2021-12-16

申请号：US16897788

申请日：2020-06-10

Applicant: Menlo Microsystems, Inc.

Inventor： Jaeseok Jeon ,  Christopher F. Keimel ,  Chris Nassar ,  Andrew Minnick

IPC: H01L23/15 ,  H01L23/29 ,  C23C16/455 ,  C23C16/40

Abstract: A through-glass via (TGV) formed in a glass substrate may comprise a metal plating layer formed in the TGV. The TGV may have a three-dimensional (3D) topology through the glass substrate and the metal plating layer conformally covering the 3D topology. The TGV may further comprise a barrier layer disposed over the metal plating layer, and a metallization layer disposed over the barrier layer. The metallization layer may be electrically coupled to the metal plating layer through the barrier layer. The barrier layer may comprise a metal-nitride film disposed on the metal plating layer that is electrically coupled to the metallization layer. The barrier layer may comprise a metal film disposed over the metal plating layer and over a portion of glass surrounding the TGV, and an electrically-insulating film disposed upon the metal film, the electrically-insulating film completely overlapping the metal plating layer and partially overlapping the metal film.

公开(公告)号：US11501928B2

公开(公告)日：2022-11-15

申请号：US16832408

申请日：2020-03-27

Applicant: Menlo Microsystems, Inc.

Inventor： Andrew Minnick ,  Christopher F. Keimel ,  Xu Zhu

IPC: B81C1/00 ,  H01H1/0237 ,  H01H49/00 ,  H01H59/00 ,  H01L21/00 ,  H01H1/00

Abstract: A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum-group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.

公开(公告)号：US20210304973A1

公开(公告)日：2021-09-30

申请号：US16832408

申请日：2020-03-27

Applicant: Menlo Microsystems, Inc.

Inventor： Andrew Minnick ,  Christopher F. Keimel ,  Xu Zhu

IPC: H01H1/0237 ,  H01H59/00 ,  H01H49/00

Abstract: A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum-group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.