Heating device, substrate processing apparatus, and method of manufacturing semiconductor device
    2.
    发明授权
    Heating device, substrate processing apparatus, and method of manufacturing semiconductor device 有权
    加热装置,基板处理装置以及半导体装置的制造方法

    公开(公告)号:US09064912B2

    公开(公告)日:2015-06-23

    申请号:US12838831

    申请日:2010-07-19

    CPC classification number: H01L21/67109

    Abstract: A heating device includes: a heating element including a mountain part and a valley part alternately connected in plurality to form a meander shape, and a holding body receiving part an end of the valley part, where a width of the holding body receiving part is greater than that of the valley part; an insulating body installed at an outer circumference of the heating element with both ends of the heating element fixed thereto; and a staple pin penetrating the holding body receiving part and a neighboring holdings body receiving part to fix the heating element to the insulating body, where the staple pin is dislocated with respect to a center of the holding body receiving part and an amount of dislocation of the staple pin varies according to a distance between the holding body receiving part and the both ends.

    Abstract translation: 一种加热装置,包括:加热元件,其包括多个交替连接以形成曲折形状的山部和谷部;以及保持体容纳部,其中,所述保持体容纳部的宽度较大 比谷部分; 绝热体,其安装在所述加热元件的外周上,所述加热元件的两端固定在所述加热元件的外周; 以及穿过保持体接收部的钉销和相邻的保持体接收部,以将加热元件固定在绝缘体上,在该绝缘体处,钉销相对于保持体接收部的中心脱位, 钉销根据保持体接收部和两端之间的距离而变化。

    Temperature regulating method, thermal processing system and semiconductor device manufacturing method
    3.
    发明申请
    Temperature regulating method, thermal processing system and semiconductor device manufacturing method 有权
    温度调节方法,热处理系统和半导体器件制造方法

    公开(公告)号:US20090187268A1

    公开(公告)日:2009-07-23

    申请号:US12382545

    申请日:2009-03-18

    Abstract: A temperature regulating method in a thermal processing system has heating means for heating an interior of a process chamber to process a substrate, a heating control section for controlling the heating means, and first and second temperature detecting means for detecting a temperature in the process chamber. The first temperature detecting means is arranged in a position closer to the substrate than the second temperature detecting means while the second temperature detecting means is arranged in a position closer to the heating means than the first temperature detecting means. The temperature regulating method includes a first step of controlling the heating means by performing integral operation, differential operation and proportional operation by means of the heating control section in a manner a detection temperature by the temperature detecting means becomes a predetermined target temperature, a second step of determining a first output control pattern by patterning a first operation amount for the heating control section to control the heating means depending upon a detection temperature detected by the first temperature detecting means, in controlling the heating means in the first step, a third step of controlling the heating means by means of the heating control section depending upon the first output control pattern determined in the second step, and a fourth step of determining a second output control pattern by patterning at least a part of a second operation amount for the heating control section to control the heating means depending upon a detection temperature detected by the second temperature detecting means, in controlling the heating means in the third step.

    Abstract translation: 热处理系统中的温度调节方法具有用于加热处理室内部以加工基板的加热装置,用于控制加热装置的加热控制部分,以及用于检测处理室中的温度的第一和第二温度检测装置 。 第一温度检测装置布置在比第二温度检测装置更靠近基板的位置,而第二温度检测装置布置在比第一温度检测装置更靠近加热装置的位置。 温度调节方法包括:通过以由温度检测装置的检测温度变为预定目标温度的方式通过加热控制部进行积分操作,差动运算和比例操作来控制加热装置的第一步骤;第二步骤 通过对所述加热控制部的图案化第一操作量来确定第一输出控制图案,以根据由所述第一温度检测装置检测到的检测温度来控制加热装置,在第一步骤中控制加热装置,第三步骤 根据在第二步骤中确定的第一输出控制模式,通过加热控制部分控制加热装置;以及第四步骤,通过对加热控制的至少一部分第二操作量进行构图来确定第二输出控制模式 根据检测来控制加热装置 由第二温度检测装置检测的吸收温度,在第三步骤中控制加热装置。

    Temperature Adjustment Method
    4.
    发明申请
    Temperature Adjustment Method 有权
    温度调节方法

    公开(公告)号:US20090107978A1

    公开(公告)日:2009-04-30

    申请号:US12224436

    申请日:2007-03-05

    CPC classification number: H01L21/324 H01L21/67248

    Abstract: A temperature adjustment method is provided to improve operating efficiency and reduce costs. Control of a heating unit in a thermal processing system including a heating control section is performed based on a first output control pattern obtained by subjecting a detection temperature provided by a first temperature detecting unit to an integral operation, a differential operation, and a proportional operation under a condition of a first set of temperature-setting conditions, a second output control pattern obtained by determining a first heat quantity in a period from the start of an increase in temperature detected by a second temperature detecting unit until the temperature inside the processing chamber reaches a maximum temperature, and using a second heat quantity obtained by subtracting the part of the output provided by the proportional operation from the first heat quantity.

    Abstract translation: 提供温度调节方法以提高操作效率并降低成本。 基于通过对由第一温度检测单元提供的检测温度进行积分运算,差分运算和比例运算而获得的第一输​​出控制图案来执行包括加热控制部分的热处理系统中的加热单元的控制 在第一组温度设定条件的条件下,确定第二输出控制模式,该第二输出控制模式通过在从第二温度检测单元检测到的温度升高开始的时间段内确定第一热量直到处理室内的温度 达到最高温度,并且使用通过从第一热量减去由比例操作提供的输出的一部分而获得的第二热量。

    Substrate processing apparatus and substrate processing method
    6.
    发明申请
    Substrate processing apparatus and substrate processing method 有权
    基板加工装置及基板处理方法

    公开(公告)号:US20060188240A1

    公开(公告)日:2006-08-24

    申请号:US10550202

    申请日:2004-06-18

    CPC classification number: H01L21/67248 G05D23/1928 G05D23/22 H01L21/67109

    Abstract: It is an object of the invention to provide a substrate processing equipment that can predict a temperature of a substrate and easily control temperature of the substrate. Formed in a reactor (processing chamber) 3 are four temperature adjustment zones, of which setting and adjustment of temperature can be made by zone heaters 340-1 to 340-4. A temperature controller 4 mixes temperatures detected by inner thermocouples 302-1 to 302-4 and outer thermocouples 342-1 to 342-4 to calculate predicted temperatures of substrates by means of the first-order lag calculation on the basis of time constants of temperatures of substrates heated by the zone heaters 340-1 to 340-4. Also, the temperature controller 4 calculates electric power values (operating variables) for the zone heaters 340-1 to 340-4 with the use of predicted temperatures of substrates to output the same to the zone heaters 340-1 to 340-4.

    Abstract translation: 本发明的目的是提供一种能够预测基板的温度并容易地控制基板的温度的基板处理设备。 在反应器(处理室)3中形成的是四个温度调节区域,其中温度的设定和调节可以由区域加热器340-1至340-4进行。 温度控制器4将由内部热电偶302-1至302-4检测的温度与外部热电偶342-1至342-4混合,以基于温度的时间常数通过一阶滞后计算来计算衬底的预测温度 的区域加热器340-1至340-4加热的基底。 此外,温度控制器4使用基板的预测温度来计算区域加热器340-1至340-4的电功率值(操作变量),以将其输出到区域加热器340-1至340-4。

    Heater supporting device
    7.
    发明授权

    公开(公告)号:US09779970B2

    公开(公告)日:2017-10-03

    申请号:US13101625

    申请日:2011-05-05

    CPC classification number: H01L21/67109

    Abstract: A heater supporting device for use in a semiconductor manufacturing apparatus is provided so as to improve the uniformity of a temperature property and the expected lifespan by preventing support pieces from being damaged and separated from piece holders, and preventing deterioration in adiabatic efficiency in the vicinity of a ceiling of a vertical type furnace. A heating element of a coil shape is disposed around an object. The support pieces are vertically connected in multiple. Hollows of an elliptical shape are formed between the respective support pieces. Concave insertions are formed on one of upper and lower surfaces of the respective support pieces, and convex insertions are formed on the other one of the upper and lower surfaces of the respective support pieces. The convex insertions are insert-fitted with the concave insertions. The support pieces are vertically connected in multiple by insert-fitting the concave insertions to the convex insertions.

    Substrate processing apparatus capable of switching control mode of heater
    8.
    发明授权
    Substrate processing apparatus capable of switching control mode of heater 有权
    能够切换加热器的控制模式的基板处理装置

    公开(公告)号:US09418881B2

    公开(公告)日:2016-08-16

    申请号:US13192784

    申请日:2011-07-28

    Abstract: Provided is a substrate processing apparatus capable of suppressing inferiority when heat treatment is controlled using a temperature sensor. The substrate processing apparatus includes a heating means configured to heat a process chamber wherein a substrate is accommodated; a first temperature detection means configured to detect a temperature about the substrate using a first thermocouple; a second temperature detection means configured to detect a temperature about the heating means using a second thermocouple; a control unit configured to control the heating means based on the temperature detected by the first temperature detection means and the temperature detected by the second temperature detection means; and a control switching means configured to control the control unit based on the temperatures detected by the first temperature detection means and the second temperature detection means such that the control unit is switched between a first control mode and a second control mode, wherein a heat resistance of the first thermocouple is greater than that of the second thermocouple, and a temperature detection performance of the second thermocouple is higher than that of the first thermocouple.

    Abstract translation: 提供一种当使用温度传感器控制热处理时能够抑制劣化的基板处理装置。 基板处理装置包括加热装置,其构造成加热容纳基板的处理室; 第一温度检测装置,被配置为使用第一热电偶检测关于所述基板的温度; 第二温度检测装置,被配置为使用第二热电偶检测关于加热装置的温度; 控制单元,被配置为基于由第一温度检测装置检测的温度和由第二温度检测装置检测的温度来控制加热装置; 以及控制切换装置,被配置为基于由第一温度检测装置和第二温度检测装置检测到的温度来控制控制单元,使得控制单元在第一控制模式和第二控制模式之间切换,其中耐热性 的第一热电偶的温度检测性能高于第一热电偶的温度检测性能。

    Substrate processing apparatus and substrate processing method
    9.
    发明授权
    Substrate processing apparatus and substrate processing method 有权
    基板加工装置及基板处理方法

    公开(公告)号:US08501599B2

    公开(公告)日:2013-08-06

    申请号:US12087479

    申请日:2007-02-21

    CPC classification number: H01L21/67109 C23C16/46 H01L21/67248

    Abstract: A substrate processing apparatus has: a process chamber in which a substrate is processed; a heating device that optically heats the substrate accommodated in the process chamber from an outer periphery side of the substrate; a cooling device that cools the outer periphery side of the substrate by flowing a fluid in a vicinity of an outer periphery of the substrate optically heated by the heating device; a temperature detection portion that detects a temperature inside the process chamber; and a heating control portion that controls the heating device and the cooling device in such a manner so as to provide a temperature difference between a center portion of the substrate and an end portion of the substrate while maintaining a temperature at the center portion at a pre-determined temperature according to the temperature detected by the temperature detection portion.

    Abstract translation: 基板处理装置具有:处理基板的处理室; 加热装置,其从基板的外周侧光学加热容纳在处理室中的基板; 冷却装置,其通过使由加热装置光学加热的基板的外周附近的流体流动来冷却基板的外周侧; 温度检测部,其检测处理室内的温度; 以及加热控制部,其以这样的方式控制加热装置和冷却装置,以在基板的中心部分和基板的端部之间提供温度差,同时将中心部分处的温度保持在预先 根据由温度检测部分检测的温度确定温度。

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