Semiconductor Anti-fuse
    2.
    发明申请

    公开(公告)号:US20220393036A1

    公开(公告)日:2022-12-08

    申请号:US17824149

    申请日:2022-05-25

    摘要: An anti-fuse having two electrical connections is constructed by adding at least one zener diode and resistor to a power MOSFET. When the voltage across the two electrical connections exceeds the zener diode voltage and the maximum gate voltage of the MOSFET, the MOSFET burns out. This shorts out the device which can be used to bypass an LED or other load when that load burns out and forms an open circuit.