公开(公告)号：US10395972B2

公开(公告)日：2019-08-27

申请号：US15872747

申请日：2018-01-16

申请人： MagnaChip Semiconductor, Ltd.

发明人： Da Soon Lee ,  Hyung Suk Choi ,  Jeong Gyu Park ,  Gil Ho Lee ,  Hyun Tae Jung ,  Meng An Jung ,  Woo Sig Min ,  Pil Seung Kang

IPC分类号： H01L21/762 ,  H01L21/764 ,  H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L29/06 ,  H01L29/10

摘要： A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes: a deep trench in a substrate; a sidewall insulating film on a side surface of the deep trench; an interlayer insulating film on the sidewall insulating film; and an air gap in the interlayer insulating film.

公开(公告)号：US20140291767A1

公开(公告)日：2014-10-02

申请号：US14067335

申请日：2013-10-30

申请人： MAGNACHIP SEMICONDUCTOR, LTD.

发明人： Da Soon Lee ,  Hyung Suk Choi ,  Jeong Gyu Park ,  Gil Ho Lee ,  Hyun Tae Jung ,  Meng An Jung ,  Woo Sig Min ,  Pil Seung Kang

IPC分类号： H01L29/06 ,  H01L21/762

CPC分类号： H01L21/76229 ,  H01L21/764 ,  H01L29/0653 ,  H01L29/1045 ,  H01L29/42368 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes: a deep trench in a substrate; a sidewall insulating film on a side surface of the deep trench; an interlayer insulating film on the sidewall insulating film; and an air gap in the interlayer insulating film.

摘要翻译： 提供了一种半导体器件及其制造方法。 半导体器件包括：衬底中的深沟槽; 在深沟槽的侧表面上的侧壁绝缘膜; 侧壁绝缘膜上的层间绝缘膜; 以及层间绝缘膜中的气隙。

公开(公告)号：US09922865B2

公开(公告)日：2018-03-20

申请号：US14067335

申请日：2013-10-30

申请人： MagnaChip Semiconductor, Ltd.

发明人： Da Soon Lee ,  Hyung Suk Choi ,  Jeong Gyu Park ,  Gil Ho Lee ,  Hyun Tae Jung ,  Meng An Jung ,  Woo Sig Min ,  Pil Seung Kang

IPC分类号： H01L21/8242 ,  H01L21/336 ,  H01L21/762 ,  H01L21/764 ,  H01L29/78 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06 ,  H01L29/10

CPC分类号： H01L21/76229 ,  H01L21/764 ,  H01L29/0653 ,  H01L29/1045 ,  H01L29/42368 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes: a deep trench in a substrate; a sidewall insulating film on a side surface of the deep trench; an interlayer insulating film on the sidewall insulating film; and an air gap in the interlayer insulating film.