发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US14067335申请日： 2013-10-30
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公开(公告)号： US20140291767A1公开(公告)日： 2014-10-02
- 发明人: Da Soon Lee , Hyung Suk Choi , Jeong Gyu Park , Gil Ho Lee , Hyun Tae Jung , Meng An Jung , Woo Sig Min , Pil Seung Kang
- 申请人： MAGNACHIP SEMICONDUCTOR, LTD.
- 申请人地址： KR Cheongju-si
- 专利权人： MAGNACHIP SEMICONDUCTOR, LTD.
- 当前专利权人： MAGNACHIP SEMICONDUCTOR, LTD.
- 当前专利权人地址： KR Cheongju-si
- 优先权： KR10-2013-0034805 20130329
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/762
摘要：
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes: a deep trench in a substrate; a sidewall insulating film on a side surface of the deep trench; an interlayer insulating film on the sidewall insulating film; and an air gap in the interlayer insulating film.
公开/授权文献
- US09922865B2 Semiconductor device and manufacturing method thereof 公开/授权日：2018-03-20
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