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公开(公告)号：US20220238712A1
公开(公告)日：2022-07-28
申请号：US17560496
申请日：2021-12-23
Applicant: MEDIATEK INC.
Inventor： Cheng-Hua LIN , Yan-Liang JI , Ching-Han JAN
Abstract: A semiconductor device includes a semiconductor substrate having a well region and a gate structure formed over the well region of the semiconductor substrate. The gate structure has a first sidewall and a second sidewall. The second sidewall is opposite the first sidewall. The semiconductor device also includes a gate spacer structure having two asymmetrical portions. One of the asymmetrical portions is formed on the first sidewall of the gate structure, and the other asymmetrical portion is formed on the second sidewall of the gate structure. The semiconductor device includes a source region and a drain region formed in the semiconductor substrate and aligned with the outer edges of the asymmetrical portions of the gate spacer structure. In some embodiments, the lateral distance between the drain region and the gate structure is greater than the lateral distance between the source region and the gate structure.
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公开(公告)号：US20230187144A1
公开(公告)日：2023-06-15
申请号：US18055128
申请日：2022-11-14
Applicant: MEDIATEK INC.
Inventor： Je-Min WEN , Cheng-Hua LIN , Ching-Han JAN
Abstract: A capacitor structure includes a first comb-shaped electrode, a second comb-shaped electrode, a bottom electrode, an insulator layer, and a top electrode. The first comb-shaped electrode has a first pad and first fingers connecting to the first pad. The second comb-shaped electrode has a second pad and second fingers connecting to the first pad, wherein one of the second fingers is disposed between two adjacent first fingers. The bottom electrode includes a first portion, a second portion and a third portion which are spaced apart, wherein the first portion and the third portion are electrically coupled to the first comb-shaped electrode and the second comb-shaped electrode, respectively. The insulator layer is disposed over the bottom electrode. The top electrode is disposed over the insulator layer.
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3.发明申请公开(公告)号：US20230038119A1
公开(公告)日：2023-02-09
申请号：US17811326
申请日：2022-07-08
Applicant: MEDIATEK INC.
Inventor： Cheng-Hua LIN , Ching-Han JAN
IPC: H01L49/02
Abstract: A semiconductor device is provided. The semiconductor device includes a semiconductor substrate, a polysilicon resistive structure, dummy polysilicon resistive structures, and a polysilicon ring structure. The semiconductor substrate has an active region and a passive region adjacent to the active region. The polysilicon resistive structure is disposed on an isolation structure in the passive region. The dummy polysilicon resistive structures are disposed on the isolation structure, respectively disposed outside opposite sides of the polysilicon resistive structure. The polysilicon ring structure is disposed on the isolation structure, encircling the polysilicon resistive structure and the dummy polysilicon resistive structures.
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公开(公告)号：US20220384608A1
公开(公告)日：2022-12-01
申请号：US17735282
申请日：2022-05-03
Applicant: MEDIATEK INC.
Inventor： Cheng-Hua LIN , Yan-Liang JI , Ching-Han JAN
IPC: H01L29/66 , H01L29/417 , H01L29/423
Abstract: A semiconductor device includes a semiconductor substrate having a well region and a gate structure formed over the well region of the semiconductor substrate. The semiconductor device also includes a gate spacer structure having a first spacer portion and a second spacer portion on opposite sidewalls of the gate structure. The semiconductor device also includes a source region and a drain region formed in the semiconductor substrate. The source region and a drain region are separated from the gate structure. The source region is adjacent to the first spacer portion of the gate spacer structure, and the drain region is adjacent to the second spacer portion of the gate spacer structure. The bottom width of the second spacer portion is greater than the bottom width of the first spacer portion.
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