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    Light emitting diode chip scale packaging structure and direct type backlight module
    3.
    发明授权
    Light emitting diode chip scale packaging structure and direct type backlight module 有权

    公开(公告)号：US10312408B2

    公开(公告)日：2019-06-04

    申请号：US15722368

    申请日：2017-10-02

    申请人： Lextar Electronics Corporation

    发明人： Che-Hsuan Huang ,  Hsin-Lun Su ,  Shu-Hsiu Chang ,  Chih-Hao Lin ,  Tzong-Liang Tsai

    IPC分类号： H01L33/08 ,  H01L33/50 ,  H01L33/56

    摘要： A light emitting diode chip scale packaging structure and a direct type backlight module are disclosed. The light emitting diode chip scale packaging structure includes a light emitting diode chip, a wavelength converting layer, a diffusion structure and a lens. The wavelength converting layer is disposed on the light emitting diode chip and directly contacting the light emitting diode chip, and the wavelength converting layer includes phosphor powders. The diffusion structure covers the light emitting diode chip and the wavelength converting layer, a ratio of a height of the diffusion structure to a width of the diffusion structure is 1:2 to 5:4, and the lens covers the diffusion structure. An outer surface of the lens is a free-form surface, and a material of the lens is different from a material of the diffusion structure.

    LIGHT EMITTING DIODE CHIP SCALE PACKAGING STRUCTURE AND DIRECT TYPE BACKLIGHT MODULE
    5.
    发明申请
    LIGHT EMITTING DIODE CHIP SCALE PACKAGING STRUCTURE AND DIRECT TYPE BACKLIGHT MODULE 审中-公开

    公开(公告)号：US20180102459A1

    公开(公告)日：2018-04-12

    申请号：US15722368

    申请日：2017-10-02

    申请人： Lextar Electronics Corporation

    发明人： Che-Hsuan Huang ,  Hsin-Lun Su ,  Shu-Hsiu Chang ,  Chih-Hao Lin ,  Tzong-Liang Tsai

    IPC分类号： H01L33/08

    CPC分类号： H01L33/08 ,  H01L33/50 ,  H01L33/56 ,  H01L2933/0091

    摘要： A light emitting diode chip scale packaging structure and a direct type backlight module are disclosed. The light emitting diode chip scale packaging structure includes a light emitting diode chip, a wavelength converting layer, a diffusion structure and a lens. The wavelength converting layer is disposed on the light emitting diode chip and directly contacting the light emitting diode chip, and the wavelength converting layer includes phosphor powders. The diffusion structure covers the light emitting diode chip and the wavelength converting layer, a ratio of a height of the diffusion structure to a width of the diffusion structure is 1:2 to 5:4, and the lens covers the diffusion structure. An outer surface of the lens is a free-form surface, and a material of the lens is different from a material of the diffusion structure.

    Pixel array package structure and display panel
    7.
    发明授权
    Pixel array package structure and display panel 有权

    公开(公告)号：US11367849B2

    公开(公告)日：2022-06-21

    申请号：US16232041

    申请日：2018-12-25

    申请人： Lextar Electronics Corporation

    发明人： Hui-Ru Wu ,  Jian-Chin Liang ,  Jo-Hsiang Chen ,  Lung-Kuan Lai ,  Cheng-Yu Tsai ,  Hsin-Lun Su ,  Ting-Kai Chen

    IPC分类号： H01L51/50 ,  H01L51/52 ,  H01L33/60

    摘要： A pixel array package structure includes: a substrate; a pixel array disposed on the substrate, in which the pixel array includes a plurality of light emitting diode chips, and the light emitting diode chips include at least one red diode chip, at least one green diode chip, at least one blue diode chip, and a combination thereof; a reflective layer disposed on the substrate and between any two adjacent of the light emitting diode chips; a light-absorbing layer disposed on the reflective layer and surrounding the pixel array; and a light-transmitting layer disposed on the pixel array, the reflective layer, and the light-absorbing layer, in which the light-transmitting layer has an upper surface and a lower surface opposite thereto, and the lower surface is in contact with the pixel array, and the upper surface has a roughness of 0.005 mm to 0.1 mm.