公开(公告)号：US20230402489A1

公开(公告)日：2023-12-14

申请号：US18037657

申请日：2020-11-25

Applicant: LG ELECTRONICS INC.

Inventor： Sunghyun HWANG ,  Mihee HEO ,  Kiseong JEON

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/36

CPC classification number: H01L27/15 ,  H01L33/0062 ,  H01L33/36 ,  H01L2933/0033

Abstract: The light emitting device includes an active layer, a plurality of first conductivity-type semiconductor layers under the active layer, and a plurality of second conductivity-type semiconductor layers on the active layer. The plurality of first conductivity-type semiconductor layers include an adsorption prevention layer spaced farthest from the active layer.
The adsorption prevention layer can include Alx1Ga(1-x1)InP, x1 can be 0.6 or less, and the thickness of the adsorption prevention layer can be 2 μm or less.

公开(公告)号：US20160351737A1

公开(公告)日：2016-12-01

申请号：US15166593

申请日：2016-05-27

Applicant: LG ELECTRONICS INC.

Inventor： Indo CHUNG ,  Juhong YANG ,  Eunjoo LEE ,  Mihee HEO

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: Disclosed is a method of manufacturing a solar cell, the method including forming a tunneling layer over one surface of a semiconductor substrate, forming a semiconductor layer over the tunneling layer, forming a conductive area including a first conductive area of a first conductive type and a second conductive area of a second conductive type in the semiconductor layer, and forming an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area. The forming of the conductive area includes forming a mask layer over the semiconductor layer, forming a doping opening corresponding to at least one of the first conductive area and the second conductive area in the mask layer using a laser, and performing doping using the doping opening.

Abstract translation: 公开了一种制造太阳能电池的方法，该方法包括在半导体衬底的一个表面上形成隧穿层，在隧道层上形成半导体层，形成包括第一导电类型的第一导电区域和 在所述半导体层中形成第二导电类型的第二导电区域，以及形成包括连接到所述第一导电区域的第一电极和连接到所述第二导电区域的第二电极的电极。 导电区域的形成包括在半导体层上形成掩模层，使用激光形成对应于掩模层中的第一导电区域和第二导电区域中的至少一个的掺杂开口，并且使用掺杂开口 。

公开(公告)号：US20220302342A1

公开(公告)日：2022-09-22

申请号：US17832221

申请日：2022-06-03

Applicant: LG ELECTRONICS INC.

Inventor： Junghoon KIM ,  Hyunwoo CHO ,  Mihee HEO

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/62

Abstract: A display device includes a plurality of semiconductor light emitting diodes, first and second electrodes respectively extending from the plurality of semiconductor light emitting diodes to supply an electrical signal to the plurality of semiconductor light emitting diodes, a plurality of pair electrodes disposed on a substrate and having a first electrode and a second electrode, a dielectric layer disposed on the plurality of pair electrodes, and a chemical bond layer disposed between the dielectric layer and the plurality of semiconductor light emitting diodes and forming a covalent bond with the dielectric layer and each of the plurality of semiconductor light emitting diodes. The chemical bond layer bonds the semiconductor light emitting diodes to the dielectric layer when a voltage applied to the plurality of pair electrodes is cut off after the plurality of semiconductor light emitting diodes are assembled on the dielectric layer.

公开(公告)号：US20190326457A1

公开(公告)日：2019-10-24

申请号：US16502812

申请日：2019-07-03

Applicant: LG ELECTRONICS INC.

Inventor： Indo CHUNG ,  Juhong YANG ,  Eunjoo LEE ,  Mihee HEO

IPC: H01L31/0224 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0745 ,  H01L31/068

Abstract: A solar cell can include a semiconductor substrate; a tunneling layer formed over the semiconductor substrate; a conductive area located over the tunneling layer, the conductive area including a first conductive area of a first conductive type and a second conductive area of a second conductive type; and an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area, wherein a mark is located in at least one of the first conductive area and the second conductive area, and has a different shape from that of a crystal plane of the semiconductor substrate and the conductive area, and wherein the mark is formed along a longitudinally extending edge of at least one of the first conductive area and the second conductive area.

公开(公告)号：US20180083149A1

公开(公告)日：2018-03-22

申请号：US15600042

申请日：2017-05-19

Applicant: LG ELECTRONICS INC.

Inventor： Chungyi KIM ,  Youngsung YANG ,  Jaewoo CHOI ,  Mihee HEO

IPC: H01L31/0368 ,  H01L31/0216 ,  H01L31/18

Abstract: Disclosed is a solar cell including a control passivation film on one surface of a semiconductor substrate, and being formed of a dielectric material; and a semiconductor layer on the control passivation film, wherein the semiconductor layer including a first conductive region having a first conductive type and a second conductive region having a second conductive type opposite to the first conductive type. The semiconductor substrate includes a diffusion region including at least one of a first diffusion region and a second diffusion region adjacent to the control passivation film, wherein the first diffusion region being locally formed to correspond to the first conductive region and having a doping concentration lower than a doping concentration of the first conductive region, wherein the second diffusion region being locally formed to correspond to the second conductive region and having a doping concentration lower than a doping concentration of the second conductive region.

公开(公告)号：US20240213426A1

公开(公告)日：2024-06-27

申请号：US18383763

申请日：2023-10-25

Applicant: LG ELECTRONICS INC.

Inventor： Byungjun KANG ,  Kiseong JEON ,  Sunghyun HWANG ,  Junho SUNG ,  Mihee HEO ,  Minwoo LEE ,  Hyungjo PARK

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L33/38

Abstract: Discussed is a semiconductor light emitting device can include a light emitting layer, a passivation layer on an upper surface and a side surface of the light emitting layer, a protective layer on a lower surface and the side surface of the light emitting layer, a first electrode between the light emitting layer and the protective layer, and a second electrode between the light emitting layer and the passivation layer. An inner angle between the side surface and the lower surface of the light emitting layer can have an obtuse angle.

公开(公告)号：US20240072213A1

公开(公告)日：2024-02-29

申请号：US18271183

申请日：2021-01-06

Applicant: LG ELECTRONICS INC.

Inventor： Mihee HEO ,  Hyeyoung YANG ,  Jisoo KO

IPC: H01L33/48 ,  H01L25/16 ,  H01L33/20

CPC classification number: H01L33/483 ,  H01L25/167 ,  H01L33/20

Abstract: A display device, according to the present invention, comprises a red semiconductor light-emitting element, a green semiconductor light-emitting element and a blue semiconductor light-emitting element, and comprises: a substrate on which the red, green and blue semiconductor light-emitting elements are arranged; and receiving holes which are formed on the substrate and in which the red, green and blue semiconductor light-emitting elements are assembled, wherein the red, green and blue semiconductor light-emitting elements each comprise a tip on a side surface thereof, such that at least any one among the angle formed by the tip and the thickness of one side with respect to the tip is formed so as to be different.

公开(公告)号：US20230395762A1

公开(公告)日：2023-12-07

申请号：US18035710

申请日：2020-11-06

Applicant: LG ELECTRONICS INC.

Inventor： Sunghyun HWANG ,  Mihee HEO ,  Kiseong JEON

IPC: H01L33/58 ,  H01L25/075 ,  H01L23/00 ,  H01L33/40

CPC classification number: H01L33/58 ,  H01L25/0753 ,  H01L24/96 ,  H01L33/40 ,  H01L2224/95085 ,  H01L2224/95144

Abstract: A light emitting device includes a first conductivity-type semiconductor layer, an active layer on the first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer on the active layer, a first electrode on the first conductivity-type semiconductor layer, a second electrode on the second conductivity-type semiconductor layer, and a diffusion layer between the first electrode and the first conductivity-type semiconductor layer. The first electrode includes a plurality of layers, and at least one layer of the plurality of layers includes a magnetic material. The diffusion layer includes a magnetic material, and a thickness of the diffusion layer is 100 nm or less.

公开(公告)号：US20220393074A1

公开(公告)日：2022-12-08

申请号：US17775746

申请日：2019-11-15

Applicant: LG ELECTRONICS INC.

Inventor： Mihee HEO ,  Junghoon KIM

IPC: H01L33/44 ,  H01L25/075 ,  H01L23/00 ,  H01L21/683

Abstract: A method of manufacturing a display device according to the present invention involves assembling a semiconductor light emitting element to an assembly substrate and then transferring the same to a wiring substrate, wherein, during self-assembly using magnetic and electric fields, the semiconductor light emitting element is fixed to the assembly substrate by forming a covalent bond between the semiconductor light emitting element and the assembly substrate so that the semiconductor light emitting element does not become separated from the assembly substrate, and when transferring the assembled object to the wiring substrate, the formed covalent bond is broken down so that the semiconductor light emitting element can be easily detached from the assembly substrate.

公开(公告)号：US20230005886A1

公开(公告)日：2023-01-05

申请号：US17779907

申请日：2020-02-10

Applicant: LG ELECTRONICS INC.

Inventor： Byungjun KANG ,  Junghoon KIM ,  Byoungkwon CHO ,  Mihee HEO

IPC: H01L25/075 ,  H01L33/38 ,  H01L33/62 ,  H01L33/20

Abstract: Discussed is a display device including a base part; a plurality of assembly electrodes disposed on the base part and having a first electrode and a second electrode that generate an electric field when power is applied; a dielectric layer disposed to cover the plurality of assembly electrodes; and a plurality of semiconductor light emitting devices disposed on a surface of the dielectric layer, wherein one surface of the plurality of semiconductor light emitting devices facing the dielectric layer and one surface of the dielectric layer facing the plurality of semiconductor light emitting devices respectively comprise a concave-convex structure.