A light emitting device includes a first conductivity-type semiconductor layer, an active layer on the first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer on the active layer, a first electrode on the first conductivity-type semiconductor layer, a second electrode on the second conductivity-type semiconductor layer, and a diffusion layer between the first electrode and the first conductivity-type semiconductor layer. The first electrode includes a plurality of layers, and at least one layer of the plurality of layers includes a magnetic material. The diffusion layer includes a magnetic material, and a thickness of the diffusion layer is 100 nm or less.