公开(公告)号：US20190310186A1

公开(公告)日：2019-10-10

申请号：US16465990

申请日：2017-02-22

Applicant: LG ELECTRONICS INC.

Inventor： Minwoo LEE ,  Junho SUNG

IPC: G01N21/3504

Abstract: The present invention relates to a gas sensor employing a non-dispersive infrared (NDIR) scheme. The gas sensor may comprise: a light source portion for emitting light; a light cavity portion for multi-reflecting the emitted light; a light detecting portion for detecting the multi-reflected light; a first light coupling portion for reflecting and concentrating the light emitted by the light source portion toward the light cavity portion; and a second light coupling portion for reflecting and concentrating the light reflected by the light cavity portion toward the light detecting portion. The first light coupling portion may comprise a light emitting surface that faces a side surface of the light cavity portion and has a via hole through which light passes, and a reflecting surface extending from the light emitting surface so as to surround the upper portion and the side portion of the light source portion such that light emitted by the light source portion is reflected toward the via hole of the light emitting surface. The second light coupling portion may comprise a light incident surface that faces a side surface of the light cavity portion and has a via hole through which light incident from the light cavity portion passes, and a reflecting surface extending from the light incident surface so as to surround the upper portion and the side portion of the light detecting portion such that light incident from the light cavity portion is reflected toward the light detecting portion.

公开(公告)号：US20220254951A1

公开(公告)日：2022-08-11

申请号：US17627069

申请日：2019-07-26

Applicant: LG ELECTRONICS INC.

Inventor： Junho SUNG

IPC: H01L33/00 ,  H01L25/075

Abstract: The present disclosure relates to a method for manufacturing a display device capable of transferring semiconductor light emitting diodes formed at predetermined intervals on a growth substrate to a wiring board or an assembly board while maintaining the intervals when the semiconductor light emitting diodes are transferred from the growth substrate to the assembly board by self-assembly.

公开(公告)号：US20240379911A1

公开(公告)日：2024-11-14

申请号：US18687208

申请日：2021-09-06

Applicant: LG ELECTRONICS INC. ,  LG DISPLAY CO., LTD.

Inventor： Jisoo KO ,  Minwoo LEE ,  Seongmin MOON ,  Junho SUNG

IPC: H01L33/48 ,  H01L25/075 ,  H01L25/16 ,  H01L33/62

Abstract: The display device may include a substrate having a plurality of assembly areas and non-assembly areas, a first partition arranged on a plurality of assembly areas and having an assembly hole, a second partition disposed on the non-assembly areas and a semiconductor light emitting device in the assembly hole, wherein a thickness of the second partition is greater than the thickness of the first partition.

公开(公告)号：US20240213426A1

公开(公告)日：2024-06-27

申请号：US18383763

申请日：2023-10-25

Applicant: LG ELECTRONICS INC.

Inventor： Byungjun KANG ,  Kiseong JEON ,  Sunghyun HWANG ,  Junho SUNG ,  Mihee HEO ,  Minwoo LEE ,  Hyungjo PARK

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L33/38

Abstract: Discussed is a semiconductor light emitting device can include a light emitting layer, a passivation layer on an upper surface and a side surface of the light emitting layer, a protective layer on a lower surface and the side surface of the light emitting layer, a first electrode between the light emitting layer and the protective layer, and a second electrode between the light emitting layer and the passivation layer. An inner angle between the side surface and the lower surface of the light emitting layer can have an obtuse angle.

公开(公告)号：US20210399171A1

公开(公告)日：2021-12-23

申请号：US17287638

申请日：2019-09-02

Applicant: LG ELECTRONICS INC.

Inventor： Junho SUNG

IPC: H01L33/22 ,  H01L33/00 ,  H01L25/075 ,  H01L33/38

Abstract: A semiconductor light emitting device according to an embodiment of the present invention includes a growth substrate, a first conductivity type semiconductor layer formed on the growth substrate, an active layer formed in a partial region on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer, a trench formed by etching a portion of the surface of the second conductivity type semiconductor layer, and metal nanoparticles inserted into the trench.

公开(公告)号：US20170345802A1

公开(公告)日：2017-11-30

申请号：US15604593

申请日：2017-05-24

Applicant: LG ELECTRONICS INC.

Inventor： Junho SUNG ,  Minwoo LEE

IPC: H01L25/075 ,  H01L33/50 ,  H01L33/62 ,  H01L25/00 ,  H01L33/54 ,  H01L33/38

CPC classification number: H01L25/0753 ,  H01L25/50 ,  H01L33/38 ,  H01L33/507 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/95001 ,  H01L2933/0016 ,  H01L2933/0041

Abstract: The present disclosure relates to a display device using a semiconductor light emitting device and a fabrication method thereof. A display device may include a plurality of semiconductor light emitting device packages; a wiring substrate coupled to the plurality of semiconductor light emitting device packages; and a plurality of wiring electrodes. A semiconductor light emitting device packages may include a plurality of semiconductor light emitting devices; a support substrate coupled to the plurality of semiconductor light emitting devices; and a conversion layer configured to covert a color of light emitted from at least some of the plurality of semiconductor light emitting devices to a different color, forming a red sub-pixel, a green sub-pixel, and a blue sub-pixel. A semiconductor light emitting device corresponding to the red or green sub-pixel and a semiconductor light emitting device corresponding to the blue sub-pixel may have light emitting areas that are of different sizes.