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    CONDUCTIVE RESIN COMPOSITION, METHOD OF PREPARING THE SAME, AND MOLDED ARTICLE INCLUDING THE SAME
    1.
    发明申请
    CONDUCTIVE RESIN COMPOSITION, METHOD OF PREPARING THE SAME, AND MOLDED ARTICLE INCLUDING THE SAME 有权

    公开(公告)号：US20220356343A1

    公开(公告)日：2022-11-10

    申请号：US17630867

    申请日：2021-07-08

    Applicant: LG CHEM, LTD.

    Inventor： Gi Dae Choi ,  Jinseon Kim ,  Myong Jo Ham ,  Hyun Jin Lee

    IPC: C08L67/02 ,  C08J3/20 ,  H01B1/24

    Abstract: A conductive resin composition including 100 parts by weight of a base resin (A), which includes a polyester, a polyarylene ether, and an aromatic elastomer; 3 to 12 parts by weight of two or more polyfunctional reaction agents (B); 0.1 to 3 parts by weight of carbon nanotubes (C); 0.1 to 5 parts by weight of carbon nanoplates (D); and 1 to 10 parts by weight of glass powder (E), a method of preparing the conductive resin composition, and a molded article including the conductive resin composition. The conductive resin composition has excellent moisture stability and heat resistance in addition to excellent appearance, rigidity, and conductivity; can minimize the influence of moisture and heat when exposed to external environments; and thus, can be used in exterior parts to replace metal parts used in automobiles.

    Method for forming silicon oxide and metal nanopattern's, and Magnetic recording medium for information storage using the same
    2.
    发明申请
    Method for forming silicon oxide and metal nanopattern's, and Magnetic recording medium for information storage using the same 有权
    用于形成氧化硅和金属纳米图案的方法，以及用于使用其的信息存储的磁记录介质

    公开(公告)号：US20150228298A1

    公开(公告)日：2015-08-13

    申请号：US14419616

    申请日：2013-09-09

    Applicant: LG CHEM, LTD. ,  IUCF-HYU (Industry-University Cooperation Foundatiion Hanyang University)

    Inventor： Yang Kyoo Han ,  Je Gwon Lee ,  Hyun Jin Lee ,  No Ma Kim ,  Sung Soo Yoon ,  Eun Ji Shin ,  Yeon Sik Jung

    IPC: G11B5/855 ,  G11B5/74 ,  G11B5/84 ,  G11B5/851

    CPC classification number: G11B5/855 ,  B81C1/00396 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y10/00 ,  B82Y40/00 ,  C08F220/18 ,  C08F220/56 ,  C08F2438/03 ,  G03F7/0002 ,  G11B5/746 ,  G11B5/8404 ,  G11B5/851 ,  H01L21/027 ,  H01L21/3065

    Abstract: The present invention relates to a method for forming a silicon oxide nanopattern, in which the method can be used to easily form a nanodot or nanohole-type nanopattern, and a metal nanopattern formed by using the same can be properly applied to a next-generation magnetic recording medium for storage information, etc., a method for forming a metal nanopattern, and a magnetic recording medium for information storage using the same.The method for forming a silicon oxide nanopattern includes the steps of forming a block copolymer thin film including specific hard segments and soft segments containing a (meth)acrylate-based repeating unit on silicon oxide of a substrate; conducting orientation of the thin film; selectively removing the soft segments from the block copolymer thin film; and conducting reactive ion etching of silicon oxide using the block copolymer thin film from which the soft segments are removed, as a mask to form a silicon oxide nanodot or nanohole pattern.

    Abstract translation: 本发明涉及一种形成氧化硅纳米图案的方法，其中该方法可用于容易地形成纳米点或纳米孔型纳米图案，并且通过使用该纳米图案形成的金属纳米图案可以适用于下一代 用于存储信息的磁记录介质等，用于形成金属纳米图案的方法和使用该磁记录介质的信息存储用磁记录介质。 形成氧化硅纳米图案的方法包括以下步骤：在基材的氧化硅上形成包含特定硬链段和含有（甲基）丙烯酸酯基重复单元的软链段的嵌段共聚物薄膜; 导电薄膜的取向; 从嵌段共聚物薄膜中选择性地除去软链段; 并使用去除了软链段的嵌段共聚物薄膜作为掩模进行氧化硅的反应离子蚀刻，以形成氧化硅纳米点或纳米孔图案。

    METHOD FOR FORMING METAL NANOWIRE OR METAL NANOMESH
    6.
    发明申请
    METHOD FOR FORMING METAL NANOWIRE OR METAL NANOMESH 有权
    形成金属纳米或金属纳米微粒的方法

    公开(公告)号：US20150232628A1

    公开(公告)日：2015-08-20

    申请号：US14420606

    申请日：2013-09-05

    Applicant: LG CHEM, LTD. ,  IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDAT- ION HANYANG UNIVERSITY

    Inventor： Yang Kyoo Han ,  Je Gwon Lee ,  Hyun Jin Lee ,  No Ma Kim ,  Sung Soo Yoon ,  Eun Ji Shin

    IPC: C08J7/12 ,  H01B13/00

    CPC classification number: C08J7/12 ,  B22F1/0025 ,  B22F9/18 ,  B22F2001/0037 ,  B82B3/0014 ,  B82Y40/00 ,  C08J2333/26 ,  C30B29/02 ,  C30B29/60 ,  H01B13/0016 ,  H01B13/0026 ,  H01B13/003

    Abstract: The present invention relates to a method for forming a metal nanowire or a metal nanomesh. More particularly, the present invention relates to a method for forming a metal nanowire or a metal nanomesh capable of forming a variety of metal nanowires or metal nanomeshes in a desired shape by a simplified method.The method for forming a metal nanowire or a metal nanomesh includes the steps of forming a block copolymer thin film on a substrate, in which the block copolymer thin film includes specific hard segments and soft segments containing one or more polymer repeating units selected from the group consisting of a poly(meth)acrylate-based repeating unit, a polyalkylene oxide-based repeating unit, a polyvinylpyridine-based repeating unit, a polystyrene-based repeating unit, a polydiene-based repeating unit and a polylactone-based repeating unit; conducting orientation of the hard segments and soft segments in a lamellar or cylindrical form in the block copolymer thin film; selectively removing the soft segments; adsorbing a metal precursor onto the hard segments; and removing the hard segments.

    Abstract translation: 本发明涉及形成金属纳米线或金属纳米粒子的方法。 更具体地说，本发明涉及通过简化的方法形成能够形成所需形状的各种金属纳米线或金属纳米微粒的金属纳米线或金属纳米粒子的方法。 形成金属纳米线或金属纳米粒子的方法包括在基材上形成嵌段共聚物薄膜的步骤，其中嵌段共聚物薄膜包括特定的硬链段和含有一个或多个选自下组的聚合物重复单元的软链段： 由聚（甲基）丙烯酸酯系重复单元，聚环氧烷系重复单元，聚乙烯基吡啶系重复单元，聚苯乙烯系重复单元，聚二烯系重复单元，聚内酯系重复单元构成。 在嵌段共聚物薄膜中以片状或圆柱形的方式导入硬链段和软链段的取向; 选择性地去除软段; 将金属前体吸附到硬链段上; 并去除硬段。

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