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公开(公告)号：US20050081886A1
公开(公告)日：2005-04-21
申请号：US10932006
申请日：2004-09-02
IPC分类号： H01L21/304 , C23G1/00 , G01N27/06 , H01L21/00 , H01L21/302
CPC分类号： H01L21/67057 , G01N27/06
摘要： There is disclosed a wafer cleaning method comprising supplying a cleaning water to a wafer cleaned with a chemical solution, measuring the resistivity of a solution including the chemical solution and cleaning water, and differentiating the measured value with respect to time, and cleaning the wafer continuously with the cleaning water until the time differential value of the resistivity becomes equal to or less than a preset value and is held at that values for preset time.
摘要翻译： 公开了一种晶片清洗方法，其包括向清洗的化学溶液的晶片提供清洗水，测量包括化学溶液和清洗水的溶液的电阻率，并且相对于时间差分测量值，以及连续清洁晶片 直到电阻率的时间差值等于或小于预设值，并将其保持在该预定时间的值。
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公开(公告)号：US20060042756A1
公开(公告)日：2006-03-02
申请号：US11211748
申请日：2005-08-26
IPC分类号： C23F1/00
摘要： A semiconductor manufacturing apparatus for cleaning a semiconductor substrate comprises a high-temperature circulation type chemical bath which is filled with a chemical to be used for cleaning of a semiconductor substrate and in which the chemical is circulated and reused, a draining mechanism which drains the chemical in the chemical bath therefrom, an auxiliary fluid supplying mechanism which adds to the drained chemical regarded as a waste chemical an auxiliary fluid, and thereby heats the waste chemical, a heat exchanger in which the heated waste chemical is stored temporarily and a new chemical is allowed to flow, and which cools the waste chemical and raises temperature of the new chemical by heat exchange, and a pipe in which the new chemical having the temperature raised in the heat exchanger is supplied to the chemical bath.
摘要翻译： 用于清洗半导体衬底的半导体制造装置包括高温循环型化学池，其填充有用于半导体衬底的清洁的化学品，并且其中化学品被循环和重复使用;排水机构，其排出化学品 辅助流体供给机构，将排出后的化学物质作为废弃化学品添加辅助流体，从而对废弃化学品进行加热，临时储存加热的废弃化学品的热交换器和新的化学物质 允许流动，并且通过热交换来冷却废化学物质并提高新化学品的温度，并且将在热交换器中升温的新化学品供应到化学浴中的管道。
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公开(公告)号：US20080202559A1
公开(公告)日：2008-08-28
申请号：US12081460
申请日：2008-04-16
IPC分类号： B08B3/04
CPC分类号： H01L21/67057 , G01N27/06
摘要： There is disclosed a wafer cleaning method comprising supplying a cleaning water to a wafer cleaned with a chemical solution, measuring the resistivity of a solution including the chemical solution and cleaning water, and differentiating the measured value with respect to time, and cleaning the wafer continuously with the cleaning water until the time differential value of the resistivity becomes equal to or less than a preset value and is held at that values for preset time.
摘要翻译： 公开了一种晶片清洗方法，其包括向清洗的化学溶液的晶片提供清洗水，测量包括化学溶液和清洗水的溶液的电阻率，并且相对于时间差分测量值，以及连续清洁晶片 直到电阻率的时间差值等于或小于预设值，并将其保持在该预定时间的值。
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4.发明授权Etching method, a method of forming a trench isolation structure, a semiconductor substrate and a semiconductor apparatus 失效蚀刻方法，形成沟槽隔离结构的方法，半导体衬底和半导体器件公开(公告)号：US07365012B2
公开(公告)日：2008-04-29
申请号：US11201266
申请日：2005-08-10
IPC分类号： H01L21/302
CPC分类号： H01L21/823481 , H01L21/30604 , H01L21/31055 , H01L21/31111 , H01L21/76224 , H01L29/66575
摘要： An etching method of subjecting a base material to an etching process using an etching agent containing hydrogen fluoride and ozone is disclosed. The base material has a first region constituted from silicon as a main material and a second region constituted from SiO2 as a main material. The etching method includes the steps of: preparing the base material; and supplying the etching agent onto the base material to form a step between the first and second regions using a feature that an etching rate of silicon by the etching agent is higher than an etching rate of SiO2 by the etching agent, so that the height of the surface of the first region is lower than the height of the surface of the second region.
摘要翻译： 公开了一种使用含有氟化氢和臭氧的蚀刻剂对基材进行蚀刻处理的蚀刻方法。 基材具有以硅为主要材料的第一区域和由SiO 2主要材料构成的第二区域。 蚀刻方法包括以下步骤：制备基材; 以及将所述蚀刻剂供应到所述基材上以形成所述第一和第二区域之间的台阶，其特征在于，所述蚀刻剂的硅的蚀刻速率高于所述蚀刻剂的SiO 2的蚀刻速率 蚀刻剂，使得第一区域的表面的高度低于第二区域的表面的高度。
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5.发明申请公开(公告)号：US20060046487A1
公开(公告)日：2006-03-02
申请号：US11211708
申请日：2005-08-26
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/30608 , H01L21/3085 , H01L21/76224 , H01L21/823412 , H01L21/823481 , H01L27/0805 , H01L29/1037 , H01L29/66795 , H01L29/7853
摘要： A method of manufacturing a semiconductor device. In the method, a thin film is formed on an Si substrate having face orientation (100), that part of the thin film, which lies on an element-isolating region, is removed. Then, the Si substrate is subjected to selective etching, making a trench in the substrate to isolate an element, by using the thin film as mask and a mixture solution of hydrofluoric acid and ozone water.
摘要翻译： 一种制造半导体器件的方法。 在该方法中，在具有面取向（100）的Si衬底上形成薄膜，去除位于元件隔离区上的部分薄膜。 然后，通过使用薄膜作为掩模和氢氟酸和臭氧水的混合溶液，对Si衬底进行选择性蚀刻，在衬底中形成沟槽以隔离元件。
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6.发明申请Etching method, a method of forming a trench isolation structure, a semiconductor substrate and a semiconductor apparatus 失效蚀刻方法，形成沟槽隔离结构的方法，半导体衬底和半导体器件公开(公告)号：US20060033178A1
公开(公告)日：2006-02-16
申请号：US11201266
申请日：2005-08-10
CPC分类号： H01L21/823481 , H01L21/30604 , H01L21/31055 , H01L21/31111 , H01L21/76224 , H01L29/66575
摘要： An etching method of subjecting a base material to an etching process using an etching agent containing hydrogen fluoride and ozone is disclosed. The base material has a first region constituted from silicon as a main material and a second region constituted from SiO2 as a main material. The etching method includes the steps of: preparing the base material; and supplying the etching agent onto the base material to form a step between the first and second regions using a feature that an etching rate of silicon by the etching agent is higher than an etching rate of SiO2 by the etching agent, so that the height of the surface of the first region is lower than the height of the surface of the second region.
摘要翻译： 公开了一种使用含有氟化氢和臭氧的蚀刻剂对基材进行蚀刻处理的蚀刻方法。 基材具有以硅为主要材料的第一区域和由SiO 2主要材料构成的第二区域。 蚀刻方法包括以下步骤：制备基材; 以及将所述蚀刻剂供应到所述基材上以形成所述第一和第二区域之间的台阶，其特征在于，所述蚀刻剂的硅的蚀刻速率高于所述蚀刻剂的SiO 2的蚀刻速率 蚀刻剂，使得第一区域的表面的高度低于第二区域的表面的高度。
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7.发明授权Semiconductor substrate treating method, semiconductor component and electronic appliance 有权半导体衬底处理方法，半导体元件和电子设备公开(公告)号：US07875557B2
公开(公告)日：2011-01-25
申请号：US11313255
申请日：2005-12-20
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31116 , C09K13/08 , H01L21/02052 , H01L21/28061 , H01L21/31133 , H01L21/31138 , H01L21/8238 , H01L29/66575
摘要： A semiconductor substrate treating method is disclosed that can selectively remove contaminants or unnecessary substances present on the surface of a semiconductor substrate. Also disclosed are a semiconductor component of enhanced reliability produced by this method and an electronic appliance incorporating the semiconductor component. The semiconductor substrate treating method comprises the step of treating a semiconductor substrate with a treating fluid containing NH4OH and HF wherein the relationships 0.30≦X/Y≦0.78 and 0.03≦Y≦6.0 are satisfied, where X represents a concentration [mol/L] of NH4OH in the treating fluid and Y represents a concentration [mol/L] of HF in the treating fluid. Preferably, the treating fluid is substantially free from H2O2. The semiconductor substrate has a surface, at least a part of which is composed of high melting point metal.
摘要翻译： 公开了可以选择性地去除存在于半导体衬底的表面上的污染物或不需要的物质的半导体衬底处理方法。 还公开了通过该方法产生的增强的可靠性的半导体部件和结合有半导体部件的电子设备。 半导体衬底处理方法包括用含有NH 4 OH和HF的处理流体处理半导体衬底的步骤，其中满足0.30＆nlE; X / Y＆nlE; 0.78和0.03＆nlE; Y＆nlE; 6.0的关系，其中X表示浓度[mol / L]，Y表示处理液中HF的浓度[mol / L]。 优选地，处理流体基本上不含H 2 O 2。 半导体基板具有至少一部分由高熔点金属构成的表面。
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8.发明授权公开(公告)号：US07439183B2
公开(公告)日：2008-10-21
申请号：US11211708
申请日：2005-08-26
IPC分类号： H01L21/302
CPC分类号： H01L21/30608 , H01L21/3085 , H01L21/76224 , H01L21/823412 , H01L21/823481 , H01L27/0805 , H01L29/1037 , H01L29/66795 , H01L29/7853
摘要： A method of manufacturing a semiconductor device. In the method, a thin film is formed on an Si substrate having face orientation (100), that part of the thin film, which lies on an element-isolating region, is removed. Then, the Si substrate is subjected to selective etching, making a trench in the substrate to isolate an element, by using the thin film as mask and a mixture solution of hydrofluoric acid and ozone water.
摘要翻译： 一种制造半导体器件的方法。 在该方法中，在具有面取向（100）的Si衬底上形成薄膜，去除位于元件隔离区上的部分薄膜。 然后，通过使用薄膜作为掩模和氢氟酸和臭氧水的混合溶液，对Si衬底进行选择性蚀刻，在衬底中形成沟槽以隔离元件。
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9.发明申请Semiconductor substrate treating method, semiconductor component and electronic appliance 有权半导体衬底处理方法，半导体元件和电子设备公开(公告)号：US20060144421A1
公开(公告)日：2006-07-06
申请号：US11313255
申请日：2005-12-20
IPC分类号： C23G1/00
CPC分类号： H01L21/31116 , C09K13/08 , H01L21/02052 , H01L21/28061 , H01L21/31133 , H01L21/31138 , H01L21/8238 , H01L29/66575
摘要： A semiconductor substrate treating method is disclosed that can selectively remove contaminants or unnecessary substances present on the surface of a semiconductor substrate. Also disclosed are a semiconductor component of enhanced reliability produced by this method and an electronic appliance incorporating the semiconductor component. The semiconductor substrate treating method comprises the step of treating a semiconductor substrate with a treating fluid containing NH4OH and HF wherein the relationships 0.30≦X/Y≦0.78 and 0.03≦Y≦6.0 are satisfied, where X represents a concentration [mol/L] of NH4OH in the treating fluid and Y represents a concentration [mol/L] of HF in the treating fluid. Preferably, the treating fluid is substantially free from H2O2. The semiconductor substrate has a surface, at least a part of which is composed of high melting point metal.
摘要翻译： 公开了可以选择性地去除存在于半导体衬底的表面上的污染物或不需要的物质的半导体衬底处理方法。 还公开了通过该方法产生的增强的可靠性的半导体部件和结合有半导体部件的电子设备。 半导体衬底处理方法包括用含有NH 4 OH和HF的处理流体处理半导体衬底的步骤，其中0.30 <= X / Y <= 0.78和0.03 <= Y <6.0的关系 满足，其中X表示处理流体中NH 4 OH的浓度[mol / L]，Y表示处理流体中HF的浓度[mol / L]。 优选地，处理流体基本上不含H 2 O 2。 半导体基板具有至少一部分由高熔点金属构成的表面。
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10.发明申请System for controlling production of electronic devices, system and method for producing electronic devices, and computer program product 审中-公开用于控制电子设备生产的系统，用于生产电子设备的系统和方法以及计算机程序产品公开(公告)号：US20070233302A1
公开(公告)日：2007-10-04
申请号：US11600791
申请日：2006-11-17
IPC分类号： G06F19/00
CPC分类号： G05B19/41865 , G05B2219/32097 , G05B2219/32275 , G05B2219/45031 , Y02P90/20 , Y02P90/265
摘要： A system for controlling production of electronic devices includes a recipe creation unit creating a processing recipe describing processing conditions for first and second processes so as to satisfy a production specification of a characteristic and a yield rate of the electronic devices, and an additional recipe describing additional processing conditions determined based on a relation of the characteristic and the yield rate to a latency time between a completion time of the first process and a start time of the second process so as to satisfy the production specification; and a recipe designation module designating the additional recipe for processing of intermediate products of the electronic devices, produced by the first process, when the latency time exceeds a reference.
摘要翻译： 一种用于控制电子设备生产的系统包括：配方创建单元，其创建描述第一和第二处理的处理条件的处理配方，以满足电子设备的特性和成品率的生产规格，以及描述附加的附加配方 基于特性和产率的关系确定的处理条件与第一处理的完成时间和第二处理的开始时间之间的等待时间以满足生产规范; 以及当延迟时间超过参考时，指定由第一处理产生的电子设备的中间产品的处理的附加配方的配方指定模块。
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