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1.发明授权Etching method, a method of forming a trench isolation structure, a semiconductor substrate and a semiconductor apparatus 失效蚀刻方法，形成沟槽隔离结构的方法，半导体衬底和半导体器件公开(公告)号：US07365012B2
公开(公告)日：2008-04-29
申请号：US11201266
申请日：2005-08-10
IPC分类号： H01L21/302
CPC分类号： H01L21/823481 , H01L21/30604 , H01L21/31055 , H01L21/31111 , H01L21/76224 , H01L29/66575
摘要： An etching method of subjecting a base material to an etching process using an etching agent containing hydrogen fluoride and ozone is disclosed. The base material has a first region constituted from silicon as a main material and a second region constituted from SiO2 as a main material. The etching method includes the steps of: preparing the base material; and supplying the etching agent onto the base material to form a step between the first and second regions using a feature that an etching rate of silicon by the etching agent is higher than an etching rate of SiO2 by the etching agent, so that the height of the surface of the first region is lower than the height of the surface of the second region.
摘要翻译： 公开了一种使用含有氟化氢和臭氧的蚀刻剂对基材进行蚀刻处理的蚀刻方法。 基材具有以硅为主要材料的第一区域和由SiO 2主要材料构成的第二区域。 蚀刻方法包括以下步骤：制备基材; 以及将所述蚀刻剂供应到所述基材上以形成所述第一和第二区域之间的台阶，其特征在于，所述蚀刻剂的硅的蚀刻速率高于所述蚀刻剂的SiO 2的蚀刻速率 蚀刻剂，使得第一区域的表面的高度低于第二区域的表面的高度。
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2.发明授权Semiconductor substrate treating method, semiconductor component and electronic appliance 有权半导体衬底处理方法，半导体元件和电子设备公开(公告)号：US07875557B2
公开(公告)日：2011-01-25
申请号：US11313255
申请日：2005-12-20
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31116 , C09K13/08 , H01L21/02052 , H01L21/28061 , H01L21/31133 , H01L21/31138 , H01L21/8238 , H01L29/66575
摘要： A semiconductor substrate treating method is disclosed that can selectively remove contaminants or unnecessary substances present on the surface of a semiconductor substrate. Also disclosed are a semiconductor component of enhanced reliability produced by this method and an electronic appliance incorporating the semiconductor component. The semiconductor substrate treating method comprises the step of treating a semiconductor substrate with a treating fluid containing NH4OH and HF wherein the relationships 0.30≦X/Y≦0.78 and 0.03≦Y≦6.0 are satisfied, where X represents a concentration [mol/L] of NH4OH in the treating fluid and Y represents a concentration [mol/L] of HF in the treating fluid. Preferably, the treating fluid is substantially free from H2O2. The semiconductor substrate has a surface, at least a part of which is composed of high melting point metal.
摘要翻译： 公开了可以选择性地去除存在于半导体衬底的表面上的污染物或不需要的物质的半导体衬底处理方法。 还公开了通过该方法产生的增强的可靠性的半导体部件和结合有半导体部件的电子设备。 半导体衬底处理方法包括用含有NH 4 OH和HF的处理流体处理半导体衬底的步骤，其中满足0.30＆nlE; X / Y＆nlE; 0.78和0.03＆nlE; Y＆nlE; 6.0的关系，其中X表示浓度[mol / L]，Y表示处理液中HF的浓度[mol / L]。 优选地，处理流体基本上不含H 2 O 2。 半导体基板具有至少一部分由高熔点金属构成的表面。
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3.发明授权公开(公告)号：US07439183B2
公开(公告)日：2008-10-21
申请号：US11211708
申请日：2005-08-26
IPC分类号： H01L21/302
CPC分类号： H01L21/30608 , H01L21/3085 , H01L21/76224 , H01L21/823412 , H01L21/823481 , H01L27/0805 , H01L29/1037 , H01L29/66795 , H01L29/7853
摘要： A method of manufacturing a semiconductor device. In the method, a thin film is formed on an Si substrate having face orientation (100), that part of the thin film, which lies on an element-isolating region, is removed. Then, the Si substrate is subjected to selective etching, making a trench in the substrate to isolate an element, by using the thin film as mask and a mixture solution of hydrofluoric acid and ozone water.
摘要翻译： 一种制造半导体器件的方法。 在该方法中，在具有面取向（100）的Si衬底上形成薄膜，去除位于元件隔离区上的部分薄膜。 然后，通过使用薄膜作为掩模和氢氟酸和臭氧水的混合溶液，对Si衬底进行选择性蚀刻，在衬底中形成沟槽以隔离元件。
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4.发明申请Semiconductor substrate treating method, semiconductor component and electronic appliance 有权半导体衬底处理方法，半导体元件和电子设备公开(公告)号：US20060144421A1
公开(公告)日：2006-07-06
申请号：US11313255
申请日：2005-12-20
IPC分类号： C23G1/00
CPC分类号： H01L21/31116 , C09K13/08 , H01L21/02052 , H01L21/28061 , H01L21/31133 , H01L21/31138 , H01L21/8238 , H01L29/66575
摘要： A semiconductor substrate treating method is disclosed that can selectively remove contaminants or unnecessary substances present on the surface of a semiconductor substrate. Also disclosed are a semiconductor component of enhanced reliability produced by this method and an electronic appliance incorporating the semiconductor component. The semiconductor substrate treating method comprises the step of treating a semiconductor substrate with a treating fluid containing NH4OH and HF wherein the relationships 0.30≦X/Y≦0.78 and 0.03≦Y≦6.0 are satisfied, where X represents a concentration [mol/L] of NH4OH in the treating fluid and Y represents a concentration [mol/L] of HF in the treating fluid. Preferably, the treating fluid is substantially free from H2O2. The semiconductor substrate has a surface, at least a part of which is composed of high melting point metal.
摘要翻译： 公开了可以选择性地去除存在于半导体衬底的表面上的污染物或不需要的物质的半导体衬底处理方法。 还公开了通过该方法产生的增强的可靠性的半导体部件和结合有半导体部件的电子设备。 半导体衬底处理方法包括用含有NH 4 OH和HF的处理流体处理半导体衬底的步骤，其中0.30 <= X / Y <= 0.78和0.03 <= Y <6.0的关系 满足，其中X表示处理流体中NH 4 OH的浓度[mol / L]，Y表示处理流体中HF的浓度[mol / L]。 优选地，处理流体基本上不含H 2 O 2。 半导体基板具有至少一部分由高熔点金属构成的表面。
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公开(公告)号：US20050081886A1
公开(公告)日：2005-04-21
申请号：US10932006
申请日：2004-09-02
IPC分类号： H01L21/304 , C23G1/00 , G01N27/06 , H01L21/00 , H01L21/302
CPC分类号： H01L21/67057 , G01N27/06
摘要： There is disclosed a wafer cleaning method comprising supplying a cleaning water to a wafer cleaned with a chemical solution, measuring the resistivity of a solution including the chemical solution and cleaning water, and differentiating the measured value with respect to time, and cleaning the wafer continuously with the cleaning water until the time differential value of the resistivity becomes equal to or less than a preset value and is held at that values for preset time.
摘要翻译： 公开了一种晶片清洗方法，其包括向清洗的化学溶液的晶片提供清洗水，测量包括化学溶液和清洗水的溶液的电阻率，并且相对于时间差分测量值，以及连续清洁晶片 直到电阻率的时间差值等于或小于预设值，并将其保持在该预定时间的值。
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公开(公告)号：US20080202559A1
公开(公告)日：2008-08-28
申请号：US12081460
申请日：2008-04-16
IPC分类号： B08B3/04
CPC分类号： H01L21/67057 , G01N27/06
摘要： There is disclosed a wafer cleaning method comprising supplying a cleaning water to a wafer cleaned with a chemical solution, measuring the resistivity of a solution including the chemical solution and cleaning water, and differentiating the measured value with respect to time, and cleaning the wafer continuously with the cleaning water until the time differential value of the resistivity becomes equal to or less than a preset value and is held at that values for preset time.
摘要翻译： 公开了一种晶片清洗方法，其包括向清洗的化学溶液的晶片提供清洗水，测量包括化学溶液和清洗水的溶液的电阻率，并且相对于时间差分测量值，以及连续清洁晶片 直到电阻率的时间差值等于或小于预设值，并将其保持在该预定时间的值。
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7.发明申请公开(公告)号：US20060046487A1
公开(公告)日：2006-03-02
申请号：US11211708
申请日：2005-08-26
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/30608 , H01L21/3085 , H01L21/76224 , H01L21/823412 , H01L21/823481 , H01L27/0805 , H01L29/1037 , H01L29/66795 , H01L29/7853
摘要： A method of manufacturing a semiconductor device. In the method, a thin film is formed on an Si substrate having face orientation (100), that part of the thin film, which lies on an element-isolating region, is removed. Then, the Si substrate is subjected to selective etching, making a trench in the substrate to isolate an element, by using the thin film as mask and a mixture solution of hydrofluoric acid and ozone water.
摘要翻译： 一种制造半导体器件的方法。 在该方法中，在具有面取向（100）的Si衬底上形成薄膜，去除位于元件隔离区上的部分薄膜。 然后，通过使用薄膜作为掩模和氢氟酸和臭氧水的混合溶液，对Si衬底进行选择性蚀刻，在衬底中形成沟槽以隔离元件。
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8.发明申请Etching method, a method of forming a trench isolation structure, a semiconductor substrate and a semiconductor apparatus 失效蚀刻方法，形成沟槽隔离结构的方法，半导体衬底和半导体器件公开(公告)号：US20060033178A1
公开(公告)日：2006-02-16
申请号：US11201266
申请日：2005-08-10
CPC分类号： H01L21/823481 , H01L21/30604 , H01L21/31055 , H01L21/31111 , H01L21/76224 , H01L29/66575
摘要： An etching method of subjecting a base material to an etching process using an etching agent containing hydrogen fluoride and ozone is disclosed. The base material has a first region constituted from silicon as a main material and a second region constituted from SiO2 as a main material. The etching method includes the steps of: preparing the base material; and supplying the etching agent onto the base material to form a step between the first and second regions using a feature that an etching rate of silicon by the etching agent is higher than an etching rate of SiO2 by the etching agent, so that the height of the surface of the first region is lower than the height of the surface of the second region.
摘要翻译： 公开了一种使用含有氟化氢和臭氧的蚀刻剂对基材进行蚀刻处理的蚀刻方法。 基材具有以硅为主要材料的第一区域和由SiO 2主要材料构成的第二区域。 蚀刻方法包括以下步骤：制备基材; 以及将所述蚀刻剂供应到所述基材上以形成所述第一和第二区域之间的台阶，其特征在于，所述蚀刻剂的硅的蚀刻速率高于所述蚀刻剂的SiO 2的蚀刻速率 蚀刻剂，使得第一区域的表面的高度低于第二区域的表面的高度。
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公开(公告)号：US09637844B2
公开(公告)日：2017-05-02
申请号：US14004473
申请日：2012-03-23
申请人： Koichi Naoi , Hiroyuki Matsuo
发明人： Koichi Naoi , Hiroyuki Matsuo
CPC分类号： D02G3/48 , B60C9/0007 , B60C9/0057 , B60C9/18 , B60C9/185 , B60C2009/1842 , B60C2009/2067 , B60C2009/2077 , D07B1/062 , D07B1/0646 , D07B1/0653 , D07B2201/2006 , D07B2201/2029 , D07B2201/2051 , D07B2201/2065 , D07B2801/12
摘要： Provided is a steel cord for reinforcing rubber articles which, when applied to a belt of a tire, can attain lightweight without reducing the durability of the tire, and in particular, to a steel cord for reinforcing rubber articles in which the properties of a treat after rubberizing are excellent and a pneumatic radial tire using the same.Also provided is a steel cord for reinforcing rubber articles comprising a core formed by arranging two core filaments 1 in parallel without being twisted together, and N (2≦N≦4) sheath filaments 2 which are twisted together around the core. Letting the diameter of the core filament 1 be d1, and the diameter of the sheath filament 2 be d2, d1>d2.
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公开(公告)号：US08482553B2
公开(公告)日：2013-07-09
申请号：US13449887
申请日：2012-04-18
申请人： Hiroyuki Matsuo
发明人： Hiroyuki Matsuo
CPC分类号： G09G3/3629 , G09G2330/023
摘要： In a drive circuit for driving a liquid crystal display element with a memory property, electric charges accumulated in a power-supply smoothing capacitor at the subsequent stage of a booster circuit are collected effectively after electricity is supplied to the liquid crystal display element. The drive circuit for driving the liquid crystal display element with a memory property supplies a boosted voltage to the driver circuit by turning on a first switch circuit while the liquid crystal display element is being reset or while an image is being rendered, and causing electric charges accumulated in the power-supply smoothing capacitor to be discharged while collecting them into a second battery by turning on a second switch circuit during a period in which electric charges accumulated in the power-supply smoothing capacitor should be discharged.
摘要翻译： 在用于驱动具有存储特性的液晶显示元件的驱动电路中，在向液晶显示元件提供电力之后，在升压电路的后续级积累在电源滤波电容器中的电荷被有效地收集。 用于驱动具有存储特性的液晶显示元件的驱动电路通过在液晶显示元件被复位或图像呈现期间接通第一开关电路而将升压电压提供给驱动电路，并且引起电荷 在电源滤波电容器中积累的电力平滑电容器通过在积蓄在电源滤波电容器中的电荷放电的时段期间接通第二开关电路而将其放入第二电池中而放电。
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