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    Load transfer mechanism
    1.
    发明授权
    Load transfer mechanism 失效
    负载传递机制

    公开(公告)号：US07232964B2

    公开(公告)日：2007-06-19

    申请号：US11404875

    申请日：2006-04-17

    申请人： Koji Tsuji ,  Mikio Yamashita

    发明人： Koji Tsuji ,  Mikio Yamashita

    IPC分类号： G01G21/00

    CPC分类号： G01G21/18 ,  G01G21/23 ,  Y10S177/09

    摘要： In a load transfer mechanism which transfers load to a load cell that constitutes a Roberval mechanism, a load transfer member has at least an area right above a load cell mounting section in the top surface thereof as a concave surface area formed to be lower than the remaining area of the top surface thereof so that it does not contact a cover member. Thus, if the barycentric position of the load of an object to be weighed placed on the cover member, regardless of whether the load is concentrated load or divided load, the load transfer mechanism can reduce the difference of the influence of deflection of the load transfer member or moment imposed on the load, transfer given load to the load cell through the load transfer member and decrease a span error produced by the load position of an object to be weighed.

    摘要翻译： 在将负载传递到构成罗伯机构的负载传感器的负载传递机构中，负载传递部件至少具有在其顶面的负载传感器安装部的正上方的区域，该面积形成为低于 其顶面的剩余面积使得其不与盖构件接触。 因此，如果被加载物体的负载的重心位置放置在盖构件上，而不管负载是集中负载还是分压，负载传递机构可以减小负载传递的偏转影响的差异 施加在负载上的构件或力矩，通过负载传递构件将给定负载传递到测力传感器，并减小由待称重物体的载荷位置产生的跨度误差。

    Load transfer mechanism
    2.
    发明申请
    Load transfer mechanism 失效
    负载传递机制

    公开(公告)号：US20060231299A1

    公开(公告)日：2006-10-19

    申请号：US11404875

    申请日：2006-04-17

    申请人： Koji Tsuji ,  Mikio Yamashita

    发明人： Koji Tsuji ,  Mikio Yamashita

    IPC分类号： G01G21/28

    CPC分类号： G01G21/18 ,  G01G21/23 ,  Y10S177/09

    摘要： In a load transfer mechanism which transfers load to a load cell that constitutes a Roberval mechanism, a load transfer member has at least an area right above a load cell mounting section in the top surface thereof as a concave surface area formed to be lower than the remaining area of the top surface thereof so that it does not contact a cover member. Thus, if the barycentric position of the load of an object to be weighed placed on the cover member, regardless of whether the load is concentrated load or divided load, the load transfer mechanism can reduce the difference of the influence of deflection of the load transfer member or moment imposed on the load, transfer given load to the load cell through the load transfer member and decrease a span error produced by the load position of an object to be weighed.

    摘要翻译： 在将负载传递到构成罗伯机构的负载传感器的负载传递机构中，负载传递部件至少具有在其顶面的负载传感器安装部的正上方的区域，该面积形成为低于 其顶面的剩余面积使得其不与盖构件接触。 因此，如果被加载物体的负载的重心位置放置在盖构件上，而不管负载是集中负载还是分压，负载传递机构可以减小负载传递的偏转影响的差异 施加在负载上的构件或力矩，通过负载传递构件将给定负载传递到测力传感器，并减小由待称重物体的载荷位置产生的跨度误差。

    INFRARED ARRAY SENSOR
    3.
    发明申请
    INFRARED ARRAY SENSOR 审中-公开
    红外阵列传感器

    公开(公告)号：US20120085907A1

    公开(公告)日：2012-04-12

    申请号：US13262412

    申请日：2010-03-31

    申请人： Koji Tsuji

    发明人： Koji Tsuji

    IPC分类号： H01L27/146

    CPC分类号： G01J5/12 ,  G01J5/02 ,  G01J5/0225 ,  G01J5/023 ,  H01L27/14649 ,  H01L27/14669 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

    摘要： The infrared array sensor comprises a base with recess and a plurality of image elements on the base to cover the recess. The image element has the first infrared absorption members and the thermosensors. The thin film structural body is formed with a slit which divides the thin film structural body into the cantilevers. The cantilever has one lengthwise end which is defined as the first end, and remaining one lengthwise end which is defined as the second end. The thermosensor is disposed on the cantilever. When the temperature variation of the thermosensor is caused, the thermosensor generates the output signal corresponding to the temperature variation of the thermosensor.

    摘要翻译： 红外阵列传感器包括具有凹陷的基座和在基座上的多个图像元件以覆盖凹部。 图像元件具有第一红外吸收构件和热敏元件。 薄膜结构体形成有将薄膜结构体分成悬臂的狭缝。 悬臂具有一个纵向端，其被定义为第一端，并且剩余一个纵向端被限定为第二端。 热传感器设置在悬臂上。 当引起热敏传感器的温度变化时，热敏传感器产生对应于热敏传感器的温度变化的输出信号。

    Gyro sensor and sensor apparatus using same
    4.
    发明授权
    Gyro sensor and sensor apparatus using same 失效
    陀螺传感器和传感器装置使用相同

    公开(公告)号：US07484410B2

    公开(公告)日：2009-02-03

    申请号：US10598333

    申请日：2005-03-14

    申请人： Koji Tsuji ,  Kazuo Gouda ,  Masao Kirihara ,  Youichi Nishijima ,  Satoshi Hyodo

    发明人： Koji Tsuji ,  Kazuo Gouda ,  Masao Kirihara ,  Youichi Nishijima ,  Satoshi Hyodo

    IPC分类号： G01C19/56 ,  G01P9/04

    CPC分类号： G01C19/5719

    摘要： Disclosed is a gyro sensor, which comprises a primary base plate (1) and a support base plate (2) which are superimposed on one another. The primary base plate (1) is provided with a driven mass body (11) to be driven in such a manner as to be vibrated in a direction intersecting with a surface of the support base plate (2), and a detection mass body (12) coupled with the driven mass body (11) through a drive spring (13) and adapted to be displaceable in a plane along the support base plate (2). Two detection springs (15) extending in the arranging direction of the driven mass body (11) and the detection mass body (12) are connected, respectively, to opposite side of the detection mass body (12), and the other ends of the detection springs (15) are connected together through a coupling segment (16). A fixing segment (17) provided at a longitudinally intermediate portion of the coupling segment (16) is fixed to the support base plate (2). A member formed by integrating the driven mass body (11) and the detection mass body (12) through the drive spring (13) is supported relative to the support base plate (2) by the detection springs (15) in a cantilever manner.

    摘要翻译： 公开了一种陀螺传感器，其包括彼此重叠的主基板（1）和支撑基板（2）。 主基板（1）设置有驱动质量体（11），其被驱动以便在与支撑基板（2）的表面相交的方向上振动，并且检测质量体（ 12），其通过驱动弹簧（13）与被驱动质量体（11）联接并且适于沿着支撑基板（2）在平面中移位。 沿被驱动质量体（11）和检测质量体（12）的排列方向延伸的两个检测弹簧（15）分别连接到检测质量体（12）的相对侧，另一端 检测弹簧（15）通过联接段（16）连接在一起。 设置在联接段（16）的纵向中间部分的固定段（17）固定到支撑基板（2）上。 通过驱动弹簧（13）将被驱动质量体（11）和检测质量体（12）集成形成的部件通过检测弹簧（15）以悬臂方式相对于支撑基板（2）支撑。

    Infrared Sensor
    7.
    发明申请
    Infrared Sensor 审中-公开
    红外线传感器

    公开(公告)号：US20110175145A1

    公开(公告)日：2011-07-21

    申请号：US12998204

    申请日：2009-09-24

    申请人： Koji Tsuji ,  Yosuke Hagihara ,  Naoki Ushiyama

    发明人： Koji Tsuji ,  Yosuke Hagihara ,  Naoki Ushiyama

    IPC分类号： H01L29/66 ,  H01L31/028

    CPC分类号： H01L27/14649 ,  G01J5/02 ,  G01J5/0225 ,  G01J5/06 ,  G01J5/08 ,  G01J5/0846 ,  G01J5/12 ,  G01J5/20 ,  H01L27/14669 ,  H01L27/14692 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/16151 ,  H01L2924/16195 ,  H01L2924/00014 ,  H01L2924/00

    摘要： The infrared sensor (1) includes a base (10), and an infrared detection element (3) formed over a surface of the base (10). The infrared detection element (3) includes an infrared absorption member (33) in the form of a thin film configured to absorb infrared, a temperature detection member (30) configured to measure a temperature difference between the infrared absorption member (33) and the base (10), and a safeguard film (39). The infrared element (3) is spaced from the surface of the base (10) for thermal insulation. The temperature detection member (30) includes a p-type polysilicon layer (35) formed over the infrared absorption member (33) and the base (10), an n-type polysilicon layer (34) formed over the infrared absorption member (33) and the base (10) without contact with the p-type polysilicon layer (35), and a connection layer (36) configured to electrically connect the p-type polysilicon layer (35) to the n-type polysilicon layer (34). The safeguard film (39) is a polysilicon layer formed on an infrared incident surface defined as an opposite surface of the infrared absorption member (33) from the base (10) to cover the infrared incident surface.

    摘要翻译： 红外传感器（1）包括基座（10）和形成在基座（10）的表面上的红外线检测元件（3）。 红外线检测元件（3）包括被构造成吸收红外线的薄膜形式的红外线吸收部件（33），配置为测量红外线吸收部件（33）与红外线吸收部件 基座（10）和保护膜（39）。 红外元件（3）与基座（10）的表面间隔开以进行绝热。 温度检测部件（30）包括在红外线吸收部件（33）和基体（10）上形成的p型多晶硅层（35），在红外线吸收部件（33）的上方形成有n型多晶硅层 ）和不与p型多晶硅层（35）接触的基极（10），以及被配置为将p型多晶硅层（35）电连接到n型多晶硅层（34）的连接层（36） 。 保护膜（39）是形成在红外线入射面上的多晶硅层，该红外线入射面被限定为与基部（10）相对的红外线吸收部件（33）的与红外线入射面相反的面。

    Sensor device, sensor system and methods for manufacturing them
    8.
    发明授权
    Sensor device, sensor system and methods for manufacturing them 失效
    传感器装置，传感器系统及其制造方法

    公开(公告)号：US07642611B2

    公开(公告)日：2010-01-05

    申请号：US10598847

    申请日：2005-03-29

    申请人： Koji Tsuji ,  Yoshiharu Sanagawa ,  Masao Kirihara ,  Kazuo Gouda ,  Youichi Nishijima

    发明人： Koji Tsuji ,  Yoshiharu Sanagawa ,  Masao Kirihara ,  Kazuo Gouda ,  Youichi Nishijima

    IPC分类号： H01L27/14 ,  H01L29/82 ,  H01L29/84

    CPC分类号： B81C1/0023 ,  B81B7/0048 ,  B81B7/007 ,  B81B2207/012 ,  B81B2207/096 ,  B81B2207/097 ,  G01P1/023 ,  G01P15/0802 ,  H01L2224/16225 ,  Y10T29/49002

    摘要： A sensor system includes a sensor device (10) and an integrated circuit (20) for driving the device (10). The device (10) includes a sensor body (1) of a silicon-based material, an upper sealing member (2) of a silicon-based material, and a lower sealing member (3) of a silicon-based material. The upper sealing member (2) and the lower sealing member (3) are joined together to cooperatively house the body (1) therewithin in an airtight manner. The device (10) and the circuit (20) are formed as a stacked body. The body (1) is electrically connected to a wiring pattern (12) of the circuit (20) through a conductive through-path (4) penetrating the upper sealing member (4) and a mounting electrode (5) provided on an outer surface of the upper sealing member (2). The device (10) is connected to an MID substrate (30) through the circuit (20).

    摘要翻译： 传感器系统包括传感器装置（10）和用于驱动装置（10）的集成电路（20）。 设备（10）包括硅基材料的传感器体（1），硅基材料的上密封构件（2）和硅基材料的下密封构件（3）。 上密封构件（2）和下密封构件（3）接合在一起，以密封的方式在其中协同地容纳主体（1）。 装置（10）和电路（20）形成为层叠体。 主体（1）通过穿过上密封构件（4）的导电通路（4）和设置在外表面上的安装电极（5）与电路（20）的布线图案（12）电连接， 的上密封构件（2）。 设备（10）通过电路（20）连接到MID基板（30）。

    Method of Manufacturing Semiconductor Device
    10.
    发明申请
    Method of Manufacturing Semiconductor Device 失效
    制造半导体器件的方法

    公开(公告)号：US20080038921A1

    公开(公告)日：2008-02-14

    申请号：US10598372

    申请日：2005-03-15

    申请人： Kazuo Gouda ,  Koji Tsuji ,  Masao Kirihara ,  Youichi Nishijima

    发明人： Kazuo Gouda ,  Koji Tsuji ,  Masao Kirihara ,  Youichi Nishijima

    IPC分类号： H01L21/306

    CPC分类号： B81C1/00142 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2203/0353

    摘要： A method of manufacturing a semiconductor device. In this method, a concave portion is formed in one surface in the thickness direction of a primary base plate comprising a semiconductor substrate with a relatively large thickness dimension. Then, through-holes are formed by a reactive-ion etching process using as a mask an opening formed in an oxide film provided on the other surface in the thickness direction of the primary base plate. The opening has a narrow width in a region corresponding to the concave portion and a wide width in the remaining region. Thus, respective times necessary for the wide-width through-hole to penetrate through the primary base plate and necessary for the narrow-width through-hole to reach a bottom surface of the concave portion can be approximately equalized to complete the common etching process of the wide-width through-hole and the narrow-width through-hole approximately simultaneously.

    摘要翻译： 一种制造半导体器件的方法。 在该方法中，在包括具有相对较大的厚度尺寸的半导体衬底的初级基板的厚度方向的一个表面上形成凹部。 然后，通过反应离子蚀刻工艺形成通孔，该方法使用在主基板的厚度方向上设置在另一个表面上的氧化膜中形成的开口作为掩模。 开口部在与凹部对应的区域中宽度窄，其余区域宽。 因此，宽度通孔贯穿初级基板所需的各个时间和窄通孔所需的到达凹部的底面的时间可以近似相等，以完成普通的蚀刻工艺 大孔同时宽通孔和窄通孔。