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发明申请
US20110175145A1 Infrared Sensor 审中-公开
红外线传感器

Infrared Sensor
摘要：
The infrared sensor (1) includes a base (10), and an infrared detection element (3) formed over a surface of the base (10). The infrared detection element (3) includes an infrared absorption member (33) in the form of a thin film configured to absorb infrared, a temperature detection member (30) configured to measure a temperature difference between the infrared absorption member (33) and the base (10), and a safeguard film (39). The infrared element (3) is spaced from the surface of the base (10) for thermal insulation. The temperature detection member (30) includes a p-type polysilicon layer (35) formed over the infrared absorption member (33) and the base (10), an n-type polysilicon layer (34) formed over the infrared absorption member (33) and the base (10) without contact with the p-type polysilicon layer (35), and a connection layer (36) configured to electrically connect the p-type polysilicon layer (35) to the n-type polysilicon layer (34). The safeguard film (39) is a polysilicon layer formed on an infrared incident surface defined as an opposite surface of the infrared absorption member (33) from the base (10) to cover the infrared incident surface.
摘要（中）：

红外传感器（1）包括基座（10）和形成在基座（10）的表面上的红外线检测元件（3）。 红外线检测元件（3）包括被构造成吸收红外线的薄膜形式的红外线吸收部件（33），配置为测量红外线吸收部件（33）与红外线吸收部件 基座（10）和保护膜（39）。 红外元件（3）与基座（10）的表面间隔开以进行绝热。 温度检测部件（30）包括在红外线吸收部件（33）和基体（10）上形成的p型多晶硅层（35），在红外线吸收部件（33）的上方形成有n型多晶硅层 ）和不与p型多晶硅层（35）接触的基极（10），以及被配置为将p型多晶硅层（35）电连接到n型多晶硅层（34）的连接层（36） 。 保护膜（39）是形成在红外线入射面上的多晶硅层，该红外线入射面被限定为与基部（10）相对的红外线吸收部件（33）的与红外线入射面相反的面。

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