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    Semiconductor processing methods of forming silicon layers
    1.
    发明授权
    Semiconductor processing methods of forming silicon layers 失效
    形成硅层的半导体加工方法

    公开(公告)号：US06455400B1

    公开(公告)日：2002-09-24

    申请号：US09596237

    申请日：2000-06-13

    Applicant: Keith Smith ,  Phillip G. Wald

    Inventor： Keith Smith ,  Phillip G. Wald

    IPC: H01L2120

    CPC classification number: H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/28525 ,  H01L21/76877

    Abstract: In one aspect, the invention includes a semiconductor processing method comprising depositing a silicon layer over a substrate at different deposition temperatures which at least include increasing the deposition temperature through a range of from about 550° C. to about 560° C. In another aspect, the invention includes a semiconductor processing method comprising, in an uninterrupted deposition process, depositing a silicon layer which comprises an essentially amorphous silicon region, an essentially polycrystalline silicon region, and a transition region interconnecting the essentially amorphous silicon region and the essentially polycrystalline silicon region, the essentially amorphous silicon region having an amorphous silicon content which is greater than or equal to about 90 weight percent of a total material of the amorphous silicon region, the essentially polycrystalline silicon region having a polycrystalline silicon content which is greater than or equal to about 90 weight percent of a total material of the polycrystalline silicon region, the transition comprising an amorphous silicon content and a polycrystalline silicon content, the transition region being defined as a region having both a lower amorphous silicon content than the essentially amorphous silicon region and a lower polycrystalline silicon content than the essentially polycrystalline silicon region, the transition region being at least 45 Angstroms thick.

    Abstract translation: 在一个方面，本发明包括一种半导体处理方法，包括在不同的沉积温度下在衬底上沉积硅层，所述沉积温度至少包括将沉积温度提高到约550℃至约560℃的范围。另一方面 本发明包括半导体处理方法，其包括在不间断的沉积工艺中沉积硅层，该硅层包括基本上非晶硅区域，基本上多晶硅区域和将基本上非晶硅区域和基本上多晶硅区域互连的过渡区域 ，所述非晶硅区域的非晶硅含量大于或等于所述非晶硅区域的总材料的约90重量％，所述多晶硅区域的多晶硅含量大于或等于约 90重量 所述多晶硅区域的总材料的百分比，所述过渡包括非晶硅含量和多晶硅含量，所述过渡区域被定义为具有比所述基本上非晶硅区域低的非晶硅含量的区域和下部多晶硅 含量大于基本上多晶硅的区域，该过渡区域至少为45埃厚。

    Semiconductor structures and semiconductor processing methods of forming silicon layers
    2.
    发明授权
    Semiconductor structures and semiconductor processing methods of forming silicon layers 有权
    形成硅层的半导体结构和半导体加工方法

    公开(公告)号：US6096626A

    公开(公告)日：2000-08-01

    申请号：US146732

    申请日：1998-09-03

    Applicant: Keith Smith ,  Phillip G. Wald

    Inventor： Keith Smith ,  Phillip G. Wald

    IPC: H01L21/205 ,  H01L21/285 ,  H01L21/768 ,  H01L21/20

    CPC classification number: H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/28525 ,  H01L21/76877

    Abstract: In one aspect, the invention includes a semiconductor processing method comprising depositing a silicon layer over a substrate at different deposition temperatures which at least include increasing the deposition temperature through a range of from about 550.degree. C. to about 560.degree. C. In another aspect, the invention includes a semiconductor processing method comprising, in an uninterrupted deposition process, depositing a silicon layer which comprises an essentially amorphous silicon region, an essentially polycrystalline silicon region, and a transition region interconnecting the essentially amorphous silicon region and the essentially polycrystalline silicon region, the essentially amorphous silicon region having an amorphous silicon content which is greater than or equal to about 90 weight percent of a total material of the amorphous silicon region, the essentially polycrystalline silicon region having a polycrystalline silicon content which is greater than or equal to about 90 weight percent of a total material of the polycrystalline silicon region, the transition comprising an amorphous silicon content and a polycrystalline silicon content, the transition region being defined as a region having both a lower amorphous silicon content than the essentially amorphous silicon region and a lower polycrystalline silicon content than the essentially polycrystalline silicon region, the transition region being at least 45 Angstroms thick.

    Abstract translation: 在一个方面，本发明包括一种半导体处理方法，包括在不同的沉积温度下在衬底上沉积硅层，其至少包括将沉积温度提高到约550℃至约560℃的范围。另一方面 本发明包括半导体处理方法，其包括在不间断的沉积工艺中沉积硅层，该硅层包括基本上非晶硅区域，基本上多晶硅区域和将基本上非晶硅区域和基本上多晶硅区域互连的过渡区域 ，所述非晶硅区域的非晶硅含量大于或等于所述非晶硅区域的总材料的约90重量％，所述多晶硅区域的多晶硅含量大于或等于约 90 所述多晶硅区域的总材料的百分比，所述过渡包括非晶硅含量和多晶硅含量，所述过渡区域被定义为具有比所述基本上非晶硅区域低的非晶硅含量的区域，以及下部多晶硅层 硅含量高于基本上多晶硅的区域，该过渡区域至少为45埃厚。

    Amorphous silicon interconnect with multiple silicon layers
    3.
    发明授权
    Amorphous silicon interconnect with multiple silicon layers 失效
    非晶硅互连多个硅层

    公开(公告)号：US6166395A

    公开(公告)日：2000-12-26

    申请号：US260183

    申请日：1999-03-01

    Applicant: Keith Smith ,  Phillip G. Wald

    Inventor： Keith Smith ,  Phillip G. Wald

    IPC: H01L21/205 ,  H01L21/285 ,  H01L21/768 ,  H01L29/04 ,  H01L23/48 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

    CPC classification number: H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/28525 ,  H01L21/76877

    Abstract: In one aspect, the invention includes a semiconductor processing method comprising depositing a silicon layer over a substrate at different deposition temperatures which at least include increasing the deposition temperature through a range of from about 550.degree. C. to about 560.degree. C. In another aspect, the invention includes a semiconductor processing method comprising, in an uninterrupted deposition process, depositing a silicon layer which comprises an essentially amorphous silicon region, an essentially polycrystalline silicon region, and a transition region interconnecting the essentially amorphous silicon region and the essentially polycrystalline silicon region, the essentially amorphous silicon region having an amorphous silicon content which is greater than or equal to about 90 weight percent of a total material of the amorphous silicon region, the essentially polycrystalline silicon region having a polycrystalline silicon content which is greater than or equal to about 90 weight percent of a total material of the polycrystalline silicon region, the transition comprising an amorphous silicon content and a polycrystalline silicon content, the transition region being defined as a region having both a lower amorphous silicon content than the essentially amorphous silicon region and a lower polycrystalline silicon content than the essentially polycrystalline silicon region, the transition region being at least 45 Angstroms thick.

    Abstract translation: 在一个方面，本发明包括一种半导体处理方法，包括在不同的沉积温度下在衬底上沉积硅层，其至少包括将沉积温度提高到约550℃至约560℃的范围。另一方面 本发明包括半导体处理方法，其包括在不间断的沉积工艺中沉积硅层，该硅层包括基本上非晶硅区域，基本上多晶硅区域和将基本上非晶硅区域和基本上多晶硅区域互连的过渡区域 ，所述非晶硅区域的非晶硅含量大于或等于所述非晶硅区域的总材料的约90重量％，所述多晶硅区域的多晶硅含量大于或等于约 90 所述多晶硅区域的总材料的百分比，所述过渡包括非晶硅含量和多晶硅含量，所述过渡区域被定义为具有比所述基本上非晶硅区域低的非晶硅含量的区域，以及下部多晶硅层 硅含量高于基本上多晶硅的区域，该过渡区域至少为45埃厚。

    Protective tool receptacle apparatus
    4.
    发明授权
    Protective tool receptacle apparatus 有权

    公开(公告)号：US12121136B2

    公开(公告)日：2024-10-22

    申请号：US17893653

    申请日：2022-08-23

    Applicant: Zachary Wachter ,  Keith Smith

    Inventor： Zachary Wachter ,  Keith Smith

    IPC: A45F5/00 ,  B25H3/02

    CPC classification number: A45F5/00 ,  B25H3/02 ,  A45F2005/008 ,  A45F2200/0575

    Abstract: A protective tool pouch apparatus. The protective tool pouch apparatus includes a receptacle component for accepting and holding tools and/or building materials. The protective tool pouch apparatus includes keeping tools and/or building materials in a vertical orientation with friction and/or magnetics and/or grooves and/or ridges and/or removable dividers in a pre-determined size for preventing the tools and/or building materials from wearing a bottom surface and/or creating a hole in the bottom surface of the receptacle component. The protective tool pouch apparatus can be used as a standalone component and/or inserted into existing tool belts, arm belts, apron pockets, vest pockets, holsters, bags, pouches, clothing pockets, backpack pockets, etc.

    Display packaging system
    5.
    发明授权
    Display packaging system 有权
    显示包装系统

    公开(公告)号：US08151988B2

    公开(公告)日：2012-04-10

    申请号：US12623471

    申请日：2009-11-23

    Applicant: Keith Smith ,  James C. Durham ,  Scott D. Greiwe

    Inventor： Keith Smith ,  James C. Durham ,  Scott D. Greiwe

    IPC: B65D73/00

    CPC classification number: B65D73/0092 ,  B65D75/366

    Abstract: A display packaging system includes a front panel, a rear panel, and a blister cavity. The blister cavity has a product holding chamber configured to receive at least one product and a sealing flange that extends outwardly from the product holding chamber. The sealing flange includes a series of apertures and is sandwiched between the interior surface of the front panel and the interior surface of the rear panel. Respective portions of an interior surface of the front panel and an interior surface of the rear panel are then adhered only to each other with the respective portions including portions of the interior surface of the front panel and portions of the interior surface of the rear panel that are disposed on opposite sides of the series of apertures.

    Abstract translation: 显示包装系统包括前面板，后面板和泡罩腔。 泡罩腔具有被配置为容纳至少一个产品的产品保持室和从产品保持室向外延伸的密封凸缘。 密封凸缘包括一系列孔，并且夹在前面板的内表面和后面板的内表面之间。 前面板的内表面和后面板的内表面的相应部分然后彼此粘合，各部分包括前面板的内表面的部分和后面板的内表面的部分， 设置在一系列孔的相对侧上。

    Plastic electronic component package
    6.
    发明申请
    Plastic electronic component package 审中-公开
    塑料电子元件包装

    公开(公告)号：US20080305355A1

    公开(公告)日：2008-12-11

    申请号：US12220543

    申请日：2008-07-25

    Applicant: Michael A. Zimmerman ,  Keith Smith ,  Jacob Shverdin

    Inventor： Michael A. Zimmerman ,  Keith Smith ,  Jacob Shverdin

    IPC: F16J15/02 ,  B32B15/08

    CPC classification number: H01L27/14618 ,  H01L23/10 ,  H01L23/3142 ,  H01L23/49861 ,  H01L24/48 ,  H01L27/14683 ,  H01L33/486 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4899 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/0102 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/15747 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/3025 ,  Y10T428/12569 ,  Y10T428/12618 ,  Y10T428/31678 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

    Abstract: A plastic package for an image sensor or other electronic component which comprises a plastic body, preferably of LCP material, molded around a leadframe and defining a cavity in which the image sensor is to be disposed. A lid assembly is provided having a transparent glass lid retained in a plastic lid frame which is weldable or otherwise bondable to the plastic body of the package to enclose the image sensor mounted in the cavity. The leadframe is usually composed of copper or a copper alloy, or a ferrous alloy having a copper coating. An interfacial layer is formed on the surfaces of the leadframe at least in those portions which are in contact with the plastic body which serves to provide substantially improved adhesion between the leadframe and the plastic material to achieve a hermetic bond between the metal and plastic materials. The interfacial layer is composed of a cuprous oxide base layer formed on a surface of the leadframe, and a cupric oxide layer formed on the cuprous oxide layer. The cupric oxide outer layer has an acicular structure which provides an interlocking mechanism for adhesion to the plastic material molded thereto in forming the package.

    Abstract translation: 一种用于图像传感器或其它电子部件的塑料封装件，其包括塑料体，优选地由LCP材料构成，围绕引线框模制并限定其中要设置图像传感器的空腔。 提供一种盖组件，其具有保持在塑料盖框架中的透明玻璃盖，其可焊接或以其他方式粘合到包装的塑料体以封闭安装在腔中的图像传感器。 引线框通常由铜或铜合金或具有铜涂层的铁合金组成。 至少在与塑料体接触的那些部分中，在引线框架的表面上形成界面层，其用于提供引线框架和塑料材料之间的显着改善的粘合性，以实现金属和塑料材料之间的密封。 界面层由形成在引线框架的表面上的氧化亚铜基底层和形成在氧化亚铜层上的氧化铜层构成。 氧化铜外层具有针状结构，其在形成包装时提供用于与模制在其上的塑料材料粘合的互锁机构。

    Web service vulnerability metadata exchange system
    8.
    发明申请
    Web service vulnerability metadata exchange system 审中-公开
    Web服务漏洞元数据交换系统

    公开(公告)号：US20070169199A1

    公开(公告)日：2007-07-19

    申请号：US11530760

    申请日：2006-09-11

    Applicant: John Quinnell ,  Mitchel Carlsen ,  Michael Ladner ,  Jeffrey Rudy ,  Keith Smith ,  Arthur Walasek

    Inventor： John Quinnell ,  Mitchel Carlsen ,  Michael Ladner ,  Jeffrey Rudy ,  Keith Smith ,  Arthur Walasek

    IPC: G06F11/00

    CPC classification number: H04L63/1433 ,  G06F21/577 ,  G06F2221/2119

    Abstract: A web service vulnerability metadata exchange system that provides for verification of web services during development by testing for the latest vulnerabilities based on security, policy, and best practice profiles prior to release of the web services, and wherein the web service vulnerability metadata exchange system will automate the surveillance of deployed web services so that new vulnerabilities are profiled and captured for use in verifying new software releases, wherein the system includes a metadata registry coupled to a database including vulnerability metadata, an update manager for updating the database records, and an access manager for authenticating and/or authorizing access to the database records.

    Abstract translation: 一种网络服务漏洞元数据交换系统，其通过在发布所述Web服务之前基于安全性，策略和最佳实践简档测试最新漏洞来提供开发期间的Web服务的验证，并且其中所述Web服务漏洞元数据交换系统将 自动化部署的Web服务的监视，以便对新的漏洞进行概要分析和捕获以用于验证新的软件版本，其中系统包括耦合到包括漏洞元数据的数据库的元数据注册表，用于更新数据库记录的更新管理器和访问 经理用于验证和/或授权访问数据库记录。

    Satellite network control by internet with file upload and distribution
    10.
    发明申请
    Satellite network control by internet with file upload and distribution 审中-公开
    互联网卫星网络控制，文件上传和发布

    公开(公告)号：US20050021678A1

    公开(公告)日：2005-01-27

    申请号：US10641187

    申请日：2003-08-14

    Applicant: Jeffrey Simyon ,  Keith Smith

    Inventor： Jeffrey Simyon ,  Keith Smith

    IPC: H04L29/06 ,  H04L29/08 ,  G06F15/16

    CPC classification number: H04L67/06 ,  H04L29/06 ,  H04L67/325 ,  H04L69/329

    Abstract: A remotely controlled uplink server system has a remote access interface that allows multiple user groups to individually control their respective media files. The user groups also have individual control over their respective remote receivers. The control over the media files includes file uploading, file management and file distribution and the control over the remote receivers includes the identification and grouping of receivers, managing the play list, scheduling and storage space on the receivers and selecting media channels. Through the remote access interface into the uplink server system, each one of the user groups operates and controls its own fully functioning network operations center, sharing the uplink facility with the other user groups. The uplink server also includes a media manager for storing and managing the media files, a network controller for combining control instructions for the remote receivers with the media files in a broadcast signal, and a transmitter for sending the broadcast signal to the remote receivers over the satellite network.

    Abstract translation: 远程控制的上行链路服务器系统具有远程访问接口，允许多个用户组单独控制其各自的媒体文件。 用户组还可以对其各自的远程接收器进行单独的控制。 对媒体文件的控制包括文件上传，文件管理和文件分发，对远程接收器的控制包括接收器的识别和分组，管理播放列表，接收器上的调度和存储空间以及选择媒体信道。 通过远程访问接口进入上行服务器系统，每个用户组操作和控制其自己的功能完善的网络操作中心，与其他用户组共享上行链路设施。 上行链路服务器还包括用于存储和管理媒体文件的媒体管理器，用于将用于远程接收机的控制指令与广播信号中的媒体文件相组合的网络控制器，以及用于通过广播信号向广播信号发送广播信号的发射机 卫星网络。

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