摘要:
A CMOS-compatible DMOS transistor can be designed by virtue of a suitable layout configuration optionally for very high drain voltages or for power amplification at very high frequencies and which can be produced at a low level of additional cost in comparison with a conventional sub-μm production technology for CMOS circuits. A gate insulator of the transistor is of a unitary thickness under a control gate in the entire (active) region through which current flows. A zone of increased doping concentration (well region) which is near the surface and which determines the transistor threshold voltage is so arranged under the control gate that it occupies the entire area under the control gate which is on the active region and ends within a so-called drift space between the control gate and a highly doped drain region. The entire surface of the drift space is covered by a zone of the conductivity type of the drain region (VLDD), which is lowly doped in comparison with the highly doped drain region.
摘要:
An apparatus for measuring the viscosity of a fluid having a first rigid member extending from a body of semiconductor material and provided with a first conductive path and a second resiliently flexible member provided with a second conductive path and arranged in cantilever fashion over the rigid member. At least one of the conductive paths may be selectively energized to brig about relative movement between the rigid and flexible member. Subsequent deenergization of the path causes the resiliently flexible member to return to its initial position, the rate of return being measured to derive a signal representative of the viscosity. Also described are methods of carrying out the measurement and of fabricating the apparatus.
摘要:
A method of fabricating a semiconductor device. A series of layers is deposited on a semiconductor substrate of a first conductivity type to form a shielding arrangement, including an upper part and a lower part, to provide a shield against accelerated ions. This is followed by forming openings in the shielding arrangement by microlithographic processes and anisotropic etching, and then implanting ions via the openings to form one of a base area and a base-connection area of the first conductivity type. Edges of the openings are displaced by isotropic etching of the lower part of the shielding arrangement. Ions are implanted which have been accelerated to energies sufficient to penetrate the one of the base area and base-connection area and a portion of the substrate underlying the one of the base area and base-connection area to form a sub-collector and a graded collector of a second conductivity type for completely encircling and separating a base from the substrate, wherein the sub-collector is more heavily doped than the collector. The base is formed by one of (i) implanting ions between the step of forming openings and the step of implanting ions accelerated, and (ii) implanting ions after the step of implanting ions accelerated. The method further includes forming an emitter, depositing an insulating layer, forming contacts to the base, the emitter and the collector, and forming a metalization arrangement.
摘要:
An electrical machine, preferably a blower drive mechanism for a motor vehicle, having a shaft which is supported in at least two bearings with a specified axial play; a cylindrical bearing is secured in a bearing seat of an end shield and rests directly on the bearing seat. The cylindrical bearing has a cylindrical outer circumference, and the bearing seat is a sleeve with a cylindrical inside diameter, into which sleeve the cylindrical bearing is secured with a press fit on the outer circumference and is held axially in the bearing seat by the thus-attained frictional engagement. This has the advantage that more-precise adjustment of the longitudinal play of the armature is possible. Moreover, no additional components such as retaining springs are necessary.
摘要:
A semiconductor wafer has a front surface and a back surface and flatness values based on partial areas of a surface grid on the front surface of the semiconductor wafer, which has a maximum local flatness value SFQRmax of less than or equal to 0.13 &mgr;m and individual SFQR values which in a peripheral area of the semiconductor wafer do not differ significantly from those in a central area of the semiconductor wafer. There is also a process for producing this semiconductor wafer, wherein the starting thickness of the semiconductor wafer is 20 to 200 &mgr;m greater than the thickness of the carrier and the semiconductor wafer is polished until the end thickness of the semiconductor wafer is 2 to 20 &mgr;m greater than the thickness of the carrier.
摘要:
A pencil, in particular for cosmetic purposes, is made by casting a stick composition into a tubular body, which forms the shaft of the pencil and is preferably seamless, in such a way that a ready-to-use exposed stick point is formed during casting.The shaft may be of wood or plastics. In the case of a wooden shaft, a solid wooden rod of twice the shaft length may be bored out and otherwise worked and then separated along a central plane transverse to the axis of the rod to form a pair of shafts into which the stick composition can subsequently be cast.
摘要:
A DC motor (1), in particular for a blower device of a motor vehicle, having a pole housing (10), a plurality of contact elements (13) effecting the bonding to a collector (12), a pole housing opening (16) making it possible to feed electrical connection lines (18) through into the pole housing (10), and an interference suppressor (28, 28.1) serving to reduce and/or eliminate line-conducted electrical interference signals, in which the interference suppressor (28, 28.1) has at least one leadthrough capacitor (48), which is located in an electrical path of at least one connection line (18). The invention further relates to an electrical interference suppressor (28, 28.1) for an electrical device located in a housing, in particular for a DC motor (1) in a pole housing (10), as well as to the use of a leadthrough capacitor (48, 48.1) for interference suppression in a DC motor (1).
摘要:
The invention relates to a closure and a method for connecting and opening saw cables (1), whereby the closure (4) is made up of several parts, which may be connected to each other, such as to rotate about at least two separate axes, by means of several bearings (13, 26, 27). The closure comprises two closure pieces (5, 6) with a separable rotating bearing (13) and a bearing lock (18) which may be opened, depending on the angular position of the closure pieces.
摘要:
A lipid-bearing preparation and method for preparing same in particular in the form of a stick or a workable paste, which is suitable for cosmetic uses, in particular in the field of decorative cosmetics for coloring and improving the appearance of the skin, the lips and the eyelids. The lipid-bearing preparation is in water-free form and contains in the lipid phase exclusively vegetable-base raw materials.
摘要:
A mini-fan (126) is implemented for installation in a recess (124) of a wall (122), which wall is equipped on the periphery of the recess (124) with a plurality of retaining members (128, 129). The fan has, for air guidance, a housing (136) that, in its installed position, projects with a housing portion (127) approximately complementary to the recess (124) of the wall (122) into that recess. Arranged on the periphery of that housing portion is at least one part (138) made of an elastomeric material, with which part the fan (126) is introducible, upon its installation with the part (138) made of elastomeric material with displacement along the wall (122), into the retaining members (128, 129), in order to bring that part (138), in the installed position, at least locally into sealing contact against the wall (122).