公开(公告)号：US09705018B2

公开(公告)日：2017-07-11

申请号：US14085433

申请日：2013-11-20

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Naoyuki Nakagawa ,  Soichiro Shibasaki ,  Hiroki Hiraga ,  Mutsuki Yamazaki ,  Kazushige Yamamoto ,  Shinya Sakurada ,  Michihiko Inaba

IPC: H01L31/032 ,  H01L31/068

CPC classification number: H01L31/0322 ,  H01L31/0323 ,  H01L31/068 ,  Y02E10/541 ,  Y02E10/547 ,  Y02P70/521

Abstract: A photoelectric conversion element of an embodiment includes: a back electrode; a heterojunction-type light absorbing layer on the back electrode, containing Cu, selected from Al, In and Ga, and selected from Se and S, and having a chalcopyrite structure; a transparent electrode on the light absorbing layer, wherein aback electrode side-part of the light absorbing layer is of p-type, and a transparent electrode-side part of the light absorbing layer is of n-type, the light absorbing layer has a part with an average crystal grain size of 1,000 nm to 3,000 nm in the vicinity of the back electrode, and the light absorbing layer has apart with an average crystal grain size of at most 500 nm in the vicinity of the transparent electrode or the light absorbing layer has an amorphous part in the vicinity of the transparent electrode.

公开(公告)号：US20140290727A1

公开(公告)日：2014-10-02

申请号：US14220428

申请日：2014-03-20

Applicant: Kabushiki Kaisha Toshiba

Inventor： Kazushige YAMAMOTO ,  Naoyuki Nakagawa ,  Soichiro Shibasaki ,  Hiroki Hiraga ,  Mutsuki Yamazaki ,  Shinya Sakurada ,  Michihiko Inaba

IPC: H01L31/078

CPC classification number: H01L31/078 ,  H01L31/068 ,  H01L31/0749 ,  H01L31/076 ,  Y02E10/541 ,  Y02E10/547

Abstract: A solar cell of an embodiment has a first solar cell, a second solar cell, and an intermediate layer between the first and second solar cells. The first solar cell has a Si layer as a light absorbing layer. The second solar cell has as a light absorbing layer one of a group I-III-VI2 compound layer and a group I2-II-IV-VI4 compound layer. The intermediate layer has an n+-type Si sublayer and at least one selected from a p+-type Si sublayer, a metal compound sublayer, and a graphene sublayer. The metal compound sublayer is represented by MX where M denotes at least one type of element selected from Nb, Mo, Pd, Ta, W, and Pt and X denotes at least one type of element selected from S, Se, and Te.

Abstract translation: 实施例的太阳能电池具有第一太阳能电池，第二太阳能电池以及第一和第二太阳能电池之间的中间层。 第一太阳能电池具有作为光吸收层的Si层。 第二太阳能电池具有I-III-VI2族化合物层和I2-II-IV-VI4族化合物层之一的光吸收层。 中间层具有n +型Si子层和选自p +型Si子层，金属化合物层和石墨烯子层中的至少一个。 金属化合物子层由MX表示，其中M表示选自Nb，Mo，Pd，Ta，W和Pt中的至少一种元素，X表示选自S，Se和Te中的至少一种元素。

公开(公告)号：US20140083496A1

公开(公告)日：2014-03-27

申请号：US14027728

申请日：2013-09-16

Applicant: Kabushiki Kaisha Toshiba

Inventor： Soichiro SHIBASAKI ,  Hiroki Hiraga ,  Naoyuki Nakagawa ,  Mutsuki Yamazaki ,  Kazushige Yamamoto ,  Shinya Sakurada ,  Michihiko Inaba

IPC: H01L31/0224 ,  H01L31/068

CPC classification number: H01L31/022466 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/068 ,  Y02E10/541 ,  Y02E10/547

Abstract: A photoelectric conversion element includes a photoelectric conversion layer, a transparent electrode, an intermediate layer, and a window layer. The photoelectric conversion layer includes a homojunction of a p-type compound semiconductor layer and an n-type compound semiconductor layer. The p-type and n-type compound semiconductors include group I-III-VI2 compound or group I2-II-IV-VI4 compound. The intermediate layer is provided between the n-type compound semiconductor layer and the transparent electrode. The intermediate layer is 1 nm to 10 nm in thickness. The window layer is provided between the intermediate layer and the transparent electrode.

Abstract translation: 光电转换元件包括光电转换层，透明电极，中间层和窗口层。 光电转换层包括p型化合物半导体层和n型化合物半导体层的均相。 p型和n型化合物半导体包括I-III-VI2族化合物或I2-II-IV-VI4族化合物。 中间层设置在n型化合物半导体层和透明电极之间。 中间层的厚度为1nm至10nm。 窗口层设置在中间层和透明电极之间。

公开(公告)号：US20180151771A1

公开(公告)日：2018-05-31

申请号：US15878000

申请日：2018-01-23

Applicant: Kabushiki Kaisha Toshiba

Inventor： Soichiro Shibasaki ,  Kazushige Yamamoto ,  Hiroki Hiraga ,  Naoyuki Nakagawa ,  Mutsuki Yamazaki ,  Shinya Sakurada ,  Michihiko Inaba ,  Hitomi Saito

IPC: H01L31/0725 ,  H01L31/068 ,  H01L31/043

CPC classification number: H01L31/0725 ,  H01L31/043 ,  H01L31/0682 ,  Y02E10/547

Abstract: A multi-junction solar cell of an embodiment includes a first solar cell including a first photoelectric conversion device, a second solar cell including a plurality of second photoelectric conversion devices connected in series and having a back contact, and an insulating layer between the first solar cell and the second solar cell. A device isolation region is provided between the second photoelectric conversion devices connected in series.

公开(公告)号：US20140083479A1

公开(公告)日：2014-03-27

申请号：US14022452

申请日：2013-09-10

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Satoshi Takayama ,  Haruhi Oooka ,  Hideyuki Nakao ,  Yuki Kudo ,  Akihiko Ono ,  Michihiko Inaba

IPC: H01L31/052

CPC classification number: H01L51/447 ,  Y02E10/52 ,  Y02E10/549

Abstract: In accordance with one embodiment, there is provided a photovoltaic cell module including a substrate; a plurality of photovoltaic cells disposed via an individual gap on the substrate; and a transparent member disposed to cover the photovoltaic cells, and configured so that light incident on the transparent member passes through the transparent member and arrives at the photovoltaic cells, wherein the transparent member has a slit-shaped recess space at a position corresponding to the individual gap between the photovoltaic cells; and the photovoltaic cell module includes a photoelectric conversion rate improvement structure on a surface side of the transparent member, on which light is incident.

Abstract translation: 根据一个实施例，提供一种包括基板的光伏电池模块; 经由衬底上的单独间隙设置的多个光伏电池; 以及透明构件，其被设置成覆盖所述光伏电池，并且被配置为使得入射到所述透明构件上的光穿过所述透明构件并到达所述光伏电池，其中所述透明构件在对应于所述透明构件的位置处具有狭缝状的凹部空间 光伏电池之间的个体差距; 并且光电池模块包括光入射的透明构件的表面侧的光电转换率改善结构。

公开(公告)号：US09722123B2

公开(公告)日：2017-08-01

申请号：US14220428

申请日：2014-03-20

Applicant: Kabushiki Kaisha Toshiba

Inventor： Kazushige Yamamoto ,  Naoyuki Nakagawa ,  Soichiro Shibasaki ,  Hiroki Hiraga ,  Mutsuki Yamazaki ,  Shinya Sakurada ,  Michihiko Inaba

IPC: H01L31/00 ,  H01L31/078 ,  H01L31/076 ,  H01L31/068 ,  H01L31/0749

CPC classification number: H01L31/078 ,  H01L31/068 ,  H01L31/0749 ,  H01L31/076 ,  Y02E10/541 ,  Y02E10/547

Abstract: A solar cell of an embodiment has a first solar cell, a second solar cell, and an intermediate layer between the first and second solar cells. The first solar cell has a Si layer as a light absorbing layer. The second solar cell has as a light absorbing layer one of a group I-III-VI2 compound layer and a group I2-II-IV-VI4 compound layer. The intermediate layer has an n+-type Si sublayer and at least one selected from a p+-type Si sublayer, a metal compound sublayer, and a graphene sublayer. The metal compound sublayer is represented by MX where M denotes at least one type of element selected from Nb, Mo, Pd, Ta, W, and Pt and X denotes at least one type of element selected from S, Se, and Te.

公开(公告)号：US20140246087A1

公开(公告)日：2014-09-04

申请号：US14278171

申请日：2014-05-15

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Hiroki Hiraga ,  Soichiro Shibasaki ,  Naoyuki Nakagawa ,  Mutsuki Yamazaki ,  Kazushige Yamamoto ,  Shinya Sakurada ,  Michihiko Inaba

IPC: H01L31/032 ,  H01L31/0224 ,  H01L31/068

CPC classification number: H01L31/022425 ,  H01L31/0322 ,  H01L31/0323 ,  H01L31/068 ,  H01L31/0749 ,  Y02E10/541 ,  Y02E10/547

Abstract: An aspect of one embodiment, there is provided a photoelectric conversion element, including a first electrode having optical transparency, a second electrode, and an optical absorption layer provided between the first electrode and the second electrode, the optical absorption layer having a compound semiconductor constituted with a chalcopyrite structure or a stannite structure, the compound semiconductor having a first element of a Group 11 element and a second element of a Group 16 element and comprising a p-type portion and an n-type portion provided between the p-type portion and the first electrode, the n-type portion and the p-type portion jointly having a homo junction, wherein the n-type portion comprises a dopant which has a formal charge Vb being not less than 1.60 and not more than 2.83.

Abstract translation: 一个实施方案的一个方面，提供一种光电转换元件，其包括具有光学透明度的第一电极，第二电极和设置在第一电极和第二电极之间的光吸收层，所述光吸收层具有化合物半导体 具有黄铜矿结构或锡酸盐结构，化合物半导体具有第11族元素​​的第一元素和第16族元素的第二元素，并且包含设置在p型部分和p型部分之间的p型部分和n型部分 并且第一电极，n型部分和p型部分共同具有均质结，其中n型部分包含形式电荷Vb不小于1.60且不大于2.83的掺杂剂。

公开(公告)号：US20140144502A1

公开(公告)日：2014-05-29

申请号：US14085433

申请日：2013-11-20

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Naoyuki Nakagawa ,  Soichiro Shibasaki ,  Hiroki Hiraga ,  Mutsuki Yamazaki ,  Kazushige Yamamoto ,  Shinya Sakurada ,  Michihiko Inaba

IPC: H01L31/032 ,  H01L31/20

CPC classification number: H01L31/0322 ,  H01L31/0323 ,  H01L31/068 ,  Y02E10/541 ,  Y02E10/547 ,  Y02P70/521

Abstract: A photoelectric conversion element of an embodiment includes: a back electrode; a heterojunction-type light absorbing layer on the back electrode, containing Cu, selected from Al, In and Ga, and selected from Se and S, and having a chalcopyrite structure; a transparent electrode on the light absorbing layer, wherein aback electrode side-part of the light absorbing layer is of p-type, and a transparent electrode-side part of the light absorbing layer is of n-type, the light absorbing layer has a part with an average crystal grain size of 1,000 nm to 3,000 nm in the vicinity of the back electrode, and the light absorbing layer has apart with an average crystal grain size of at most 500 nm in the vicinity of the transparent electrode or the light absorbing layer has an amorphous part in the vicinity of the transparent electrode.

Abstract translation: 实施方式的光电转换元件包括：背面电极; 背面电极上的异质结型光吸收层，含有选自Al，In和Ga的Cu，选自Se和S，并具有黄铜矿结构; 在所述光吸收层上的透明电极，其中所述光吸收层的绝缘电极侧部分为p型，并且所述光吸收层的透明电极侧部分为n型，所述光吸收层具有 在背面电极附近的平均晶粒尺寸为1000nm〜3000nm的部分，在透明电极附近的光吸收层的平均结晶粒径为500nm以下， 层在透明电极附近具有非晶部分。

公开(公告)号：US20140053904A1

公开(公告)日：2014-02-27

申请号：US14069535

申请日：2013-11-01

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Naoyuki Nakagawa ,  Soichiro Shibasaki ,  Mutsuki Yamazaki ,  Shinya Sakurada ,  Michihiko Inaba

IPC: H01L31/032

CPC classification number: H01L31/0322 ,  H01L31/0749 ,  Y02E10/541

Abstract: A photoelectric conversion element of an embodiment includes: a light absorbing layer containing Cu, at least one Group IIIb element selected from the group including Al, In and Ga, and S or Se, and having a chalcopyrite structure; and a buffer layer formed from Zn and O or S, in which the ratio S/(S+O) in the area extending in the buffer layer up to 10 nm from the interface between the light absorbing layer and the buffer layer, is equal to or greater than 0.7 and equal to or less than 1.0.

Abstract translation: 实施方式的光电转换元件包括：含有Cu的光吸收层，选自Al，In和Ga的至少一种IIIb族元素，以及S或Se，并具有黄铜矿结构; 以及由Zn和O或S形成的缓冲层，其中从缓冲层延伸的区域中的S /（S + O）从光吸收层和缓冲层之间的界面达到10nm是相等的 大于等于0.7且等于或小于1.0。

公开(公告)号：US20140053903A1

公开(公告)日：2014-02-27

申请号：US14069531

申请日：2013-11-01

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Naoyuki Nakagawa ,  Soichiro Shibasaki ,  Mutsuki Yamazaki ,  Shinya Sakurada ,  Michihiko Inaba

IPC: H01L31/0336

CPC classification number: H01L31/0336 ,  H01L31/0322 ,  H01L31/0749 ,  Y02E10/541

Abstract: A photoelectric conversion element of an embodiment includes: a light absorbing layer containing copper (Cu), at least one Group IIIb element selected from the group including aluminum (Al), indium (In) and gallium (Ga), and sulfur (S) or selenium (Se), and having a chalcopyrite structure; and a buffer layer formed from zinc (Zn) and oxygen (O) or sulfur (S), wherein the molar ratio represented by S/(S+O) of the buffer layer is equal to or greater than 0.7 and equal to or less than 1.0, and the crystal grain size is equal to or greater than 10 nm and equal to or less than 100 nm.

Abstract translation: 实施方式的光电转换元件包括：包含铜（Cu）的光吸收层，选自铝（Al），铟（In）和镓（Ga）和硫（S））中的至少一种IIIb族元素， 或硒（Se），并具有黄铜矿结构; 和由锌（Zn）和氧（O）或硫（S）形成的缓冲层，其中由缓冲层的S /（S + O）表示的摩尔比等于或大于0.7，等于或小于 并且晶粒尺寸等于或大于10nm且等于或小于100nm。