公开(公告)号：US20230215965A1

公开(公告)日：2023-07-06

申请号：US18181607

申请日：2023-03-10

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION

发明人： Kazushige Yamamoto ,  Yukitami Mizuno ,  Yuya Honishi ,  Soichiro Shibasaki ,  Naoyuki Nakagawa ,  Yasutaka Nishida ,  Mutsuki Yamazaki

IPC分类号： H01L31/0687 ,  H01L31/0336

CPC分类号： H01L31/0687 ,  H01L31/0336

摘要： A solar cell according to an embodiment includes a p-electrode, a p-type light-absorbing layer containing a cuprous oxide or/and a complex oxide of cuprous oxides as a main component on the p-electrode, an n-type layer containing an oxide containing Ga on the p-type light-absorbing layer, and an n-electrode. A first region is included between the p-type light-absorbing layer and the n-type layer. The first region is a region from a depth of 2 nm from an interface between the p-type light-absorbing layer and the n-type layer toward the p-type light absorbing layer to a depth of 2 nm from the interface between the p-type light-absorbing layer and the n-type layer toward the n-type layer. Cu, Ga, M1, and O are contained in the first region. M1 is one or more elements selected from the group consisting of Sn, Sb, Ag, Li, Na, K, Cs, Rb, Al, In, Zn, Mg, Si, Ge, N, B, Ti, Hf, Zr, and Ca. A ratio of Cu, Ga, M1, and O is a1:b1:c1:d1. a1, b1, c1, and d1 satisfy 1.80≤a1≤2.20, 0.005≤b1≤0.05, 0≤c1≤0.20, and 0.60≤d1≤1.00.

公开(公告)号：US20230125003A1

公开(公告)日：2023-04-20

申请号：US17898512

申请日：2022-08-30

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION

发明人： Naoyuki Nakagawa ,  Yukitami Mizuno ,  Soichiro Shibasaki ,  Yuya Honishi ,  Mutsuki Yamazaki ,  Yoshiko Hiraoka ,  Kazushige Yamamoto

IPC分类号： H01L31/032 ,  H01L31/0224 ,  H01L31/0725

摘要： A solar cell of an embodiment includes a p-electrode; an n-electrode; a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide; and an n-type layer located between the first n-type layer and the n-electrode, the n-type layer including a first n-type layer and a second n-type layer or a first n-type region and a second n-type region; wherein the first n-type layer and the first n-type region is located on the p-type light-absorbing layer side, the second n-type layer and the second n-type region is located on the n-electrode side, the first n-type layer and the first n-type region mainly contain a compound represented by Gax1M1x2Ox3, the M1 is one or more selected from the group consisting of Hf, Zr, In, Zn, Ti, Al, B, Sn, Si, and Ge, the x1, the x2, and the x3 are more than 0, and the x3 when a sum of the x1 and the x2 is 2 is 3.0 or more and 3.8 or less, the second n-type layer and the second n-type region mainly contain a compound represented by Gay1Zny2M2y3M3y4Oy5, the M2 is one or more selected from the group consisting of Hf, Zr, In, Ti, Al, B, Si, and Ge, the M3 is Sn or/and Mg, the y1, the y2, the y3, and the y4 are 0 or more, a sum of the y3 and the y4 is more than 0, and the y5 when a sum of the y1, the y2, the y3, and the y4 is 2 is 2.2 or more and 3.6 or less.

公开(公告)号：US20230086765A1

公开(公告)日：2023-03-23

申请号：US17898513

申请日：2022-08-30

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION

发明人： Kazushige Yamamoto ,  Naoyuki Nakagawa ,  Yukitami Mizuno ,  Soichiro Shibasaki ,  Yuya Honishi ,  Mutsuki Yamazaki ,  Yasutaka Nishida

IPC分类号： H01L31/072

摘要： A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide, and an n-type layer that includes a first n-type layer which is located between the p-type light-absorbing layer and the n-electrode, which mainly contains a compound represented by Gav1Znv2Snv3M1v4Ov5, the M1 being one or more selected from the group consisting of Hf, Zr, In, Ti, Al, B, Mg, Si, and Ge, the v1, the v2, and the v4 being numerical values of 0.00 or more, the v3 and the v5 being numerical values of more than 0, at least one of the v1 and the v2 being a numerical value of more than 0, and the v5 when a sum of the v1, the v2, the v3, and the v4 is 1 being 1.00 or more and 2.00 or less, and which is located on the n-electrode side, and a second n-type layer which is a layer that mainly contains a compound represented by Gaw1M2w2M3w3M4w4Ow5, the M2 being Al or/and B, the M3 is one or more selected from the group consisting of In, Ti, Zn, Hf, and Zr, the M4 being one or more selected from the group consisting of Sn, Si, and Ge, the w1 and the w5 being numerical values of more than 0, the w2, the w3, and the w4 being numerical values of 0.00 or more, and the w5 when a sum of the w1, the w2, the w3, and the w4 is 2 being 3.00 or more and 3.80 or less, and which is located on the p-type light-absorbing layer side.

公开(公告)号：US20230006087A1

公开(公告)日：2023-01-05

申请号：US17938990

申请日：2022-09-07

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION

发明人： Soichiro Shibasaki ,  Yuya Honishi ,  Naoyuki Nakagawa ,  Mutsuki Yamazaki ,  Yukitami Mizuno ,  Yasutaka Nishida ,  Kazushige Yamamoto

IPC分类号： H01L31/072 ,  H01L31/0336 ,  H01L31/05

摘要： A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide, and a first n-type layer which is located between the p-type light-absorbing layer and the n-electrode, which mainly contains a compound represented by Gax1M1x2M2x3M3x4M4x5Ox6, the M1 being Hf and/or Zr, the M2 being one or more selected from the group consisting of In, Ti, and Zn, the M3 being Al and/or B, the M4 is one or more selected from the group consisting of Sn, Si, and Ge, the x1, the x2, and the x6 being more than 0, the x3, the x4, and the x5 being 0 or more, and the x6 when a sum of the x1, the x2, the x3, the x4, and the x5 is 2 being 3.0 or more and 3.8 or less.

公开(公告)号：US11205732B2

公开(公告)日：2021-12-21

申请号：US16691791

申请日：2019-11-22

申请人： Kabushiki Kaisha Toshiba

发明人： Soichiro Shibasaki ,  Hiroki Hiraga ,  Hitomi Saito ,  Naoyuki Nakagawa ,  Mutsuki Yamazaki ,  Kazushige Yamamoto

IPC分类号： H01L31/043 ,  H01L31/05 ,  H01L25/04 ,  H01L31/0725 ,  H01L31/0224 ,  H01L31/0749 ,  H01L31/078 ,  H01L31/068

摘要： According to one embodiment, a multi-junction solar cell includes a first solar cell, a second solar cell, and an insulating layer. The first solar cell includes a first photoelectric conversion element. The second solar cell is connected in parallel with the first solar cell. The second solar cell includes multiple second photoelectric conversion elements connected in series. The insulating layer is provided between the first solar cell and the second solar cell. The second photoelectric conversion element includes a p-electrode and an n-electrode. The p-electrode is connected to a p+-region including a surface on a side opposite to a light incident surface. The n-electrode is connected to an n+-region including the surface on the side opposite to the light incident surface. The p-electrodes oppose each other or the n-electrodes oppose each other in a region where the multiple second photoelectric conversion elements are adjacent to each other.

公开(公告)号：US11171253B2

公开(公告)日：2021-11-09

申请号：US15691984

申请日：2017-08-31

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Soichiro Shibasaki ,  Miyuki Shiokawa ,  Sara Yoshio ,  Naoyuki Nakagawa ,  Yukitami Mizuno ,  Kohei Nakayama ,  Mutsuki Yamazaki ,  Yoshiko Hiraoka ,  Kazushige Yamamoto ,  Yuya Honishi ,  Takeshi Niimoto

IPC分类号： H01L31/054 ,  H01L31/046 ,  H01L31/0224 ,  H01L31/032

摘要： A solar cell of an embodiment includes: a first electrode; a second electrode; a light-absorbing layer interposed between the first electrode and the second electrode; a dot region interposed between the first electrode and the light-absorbing layer, the dot region including dots.

公开(公告)号：US10573771B2

公开(公告)日：2020-02-25

申请号：US14854190

申请日：2015-09-15

申请人： Kabushiki Kaisha Toshiba

发明人： Soichiro Shibasaki ,  Hiroki Hiraga ,  Hitomi Saito ,  Naoyuki Nakagawa ,  Mutsuki Yamazaki ,  Kazushige Yamamoto

IPC分类号： H01L31/043 ,  H01L31/05 ,  H01L31/0749 ,  H01L31/078 ,  H01L31/068

摘要： According to one embodiment, a multi-junction solar cell includes a first solar cell, a second solar cell, and an insulating layer. The first solar cell includes a first photoelectric conversion element. The second solar cell is connected in parallel with the first solar cell. The second solar cell includes multiple second photoelectric conversion elements connected in series. The insulating layer is provided between the first solar cell and the second solar cell. The second photoelectric conversion element includes a p-electrode and an n-electrode. The p-electrode is connected to a p+-region including a surface on a side opposite to a light incident surface. The n-electrode is connected to an n+-region including the surface on the side opposite to the light incident surface. The p-electrodes oppose each other or the n-electrodes oppose each other in a region where the multiple second photoelectric conversion elements are adjacent to each other.

公开(公告)号：US20200006583A1

公开(公告)日：2020-01-02

申请号：US16563994

申请日：2019-09-09

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION

发明人： Soichiro Shibasaki ,  Mutsuki Yamazaki ,  Kazushige Yamamoto ,  Yuya Honishi

IPC分类号： H01L31/0445 ,  H01L31/0687 ,  H01L31/0224 ,  H01L31/032 ,  H02S40/38

摘要： A solar cell of an embodiment includes: a p-electrode in which a first p-electrode and a second p-electrode are laminated; a p-type light-absorbing layer in direct contact with the first p-electrode; an n-type layer in direct contact with the p-type light-absorbing layer; and an n-electrode. The first p-electrode is disposed between the p-type light-absorbing layer and the second p-electrode. The p-type light-absorbing layer is disposed between the n-type layer and the first p-electrode. The n-type layer is disposed between the p-type light-absorbing layer and the n-electrode. The first p-electrode includes a metal oxide containing Sn as a main component.

公开(公告)号：US20180151771A1

公开(公告)日：2018-05-31

申请号：US15878000

申请日：2018-01-23

申请人： Kabushiki Kaisha Toshiba

发明人： Soichiro Shibasaki ,  Kazushige Yamamoto ,  Hiroki Hiraga ,  Naoyuki Nakagawa ,  Mutsuki Yamazaki ,  Shinya Sakurada ,  Michihiko Inaba ,  Hitomi Saito

IPC分类号： H01L31/0725 ,  H01L31/068 ,  H01L31/043

CPC分类号： H01L31/0725 ,  H01L31/043 ,  H01L31/0682 ,  Y02E10/547

摘要： A multi-junction solar cell of an embodiment includes a first solar cell including a first photoelectric conversion device, a second solar cell including a plurality of second photoelectric conversion devices connected in series and having a back contact, and an insulating layer between the first solar cell and the second solar cell. A device isolation region is provided between the second photoelectric conversion devices connected in series.

公开(公告)号：US20170077326A1

公开(公告)日：2017-03-16

申请号：US15256901

申请日：2016-09-06

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Soichiro Shibasaki ,  Hiroki Hiraga ,  Naoyuki Nakagawa ,  Miyuki Shiokawa ,  Hitomi Saito ,  Mutsuki Yamazaki ,  Kazushige Yamamoto

IPC分类号： H01L31/032 ,  H01L31/0445 ,  H01L31/047

CPC分类号： H01L31/0322 ,  H01L31/0475 ,  Y02E10/541

摘要： A photoelectric conversion element of an embodiment includes a first electrode, a second electrode, and a light-absorbing layer containing a chalcopyrite-type compound containing a group Ib element, a group IIIb element, and a group VIb element between the first electrode and the second electrode. A region in which concentration of the group Ib element in the light-absorbing layer is from 0.1 to 10 atom %, both inclusive, is included in a region up to a depth of 10 nm in a direction from a principal plane of the light-absorbing layer on a side of the second electrode to a side of the first electrode.

摘要翻译： 实施例的光电转换元件包括第一电极，第二电极和含有在第一电极和第二电极之间含有Ib族元素，IIIb族元素和VIb族元素的黄铜矿型化合物的光吸收层 第二电极。 光吸收层中的Ib族元素的浓度为0.1〜10原子％的区域包含在距发光层的主面的方向为10nm以下的区域中， 在第二电极的一侧的吸收层到第一电极的一侧。