公开(公告)号：US09890470B2

公开(公告)日：2018-02-13

申请号：US14375783

申请日：2013-01-30

Applicant: KYOCERA Corporation

Inventor： Katsuaki Masaki ,  Yutaka Kuba ,  Chiaki Domoto ,  Daisuke Ueyama ,  Yuichiro Hayashi

IPC: C30B15/32 ,  C30B9/06 ,  C30B29/36

CPC classification number: C30B9/06 ,  C30B15/32 ,  C30B29/36 ,  Y10T117/1024 ,  Y10T117/1092

Abstract: A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.

公开(公告)号：US20150020730A1

公开(公告)日：2015-01-22

申请号：US14375783

申请日：2013-01-30

Applicant: KYOCERA Corporation

Inventor： Katsuaki Masaki ,  Yutaka Kuba ,  Chiaki Domoto ,  Daisuke Ueyama ,  Yuichiro Hayashi

IPC: C30B9/06 ,  C30B29/36

CPC classification number: C30B9/06 ,  C30B15/32 ,  C30B29/36 ,  Y10T117/1024 ,  Y10T117/1092

Abstract: A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.

Abstract translation: 根据本发明的用于通过溶液法生长晶体的晶种保持器，其包括由碳化硅制成的晶种; 在晶种上方的保持构件; 配置用于固定所述晶种和所述保持构件的粘合剂; 以及在厚度方向插入粘合剂中的碳制成的片状部件，其平面图中具有比晶种的外周小的外周。

公开(公告)号：US09777396B2

公开(公告)日：2017-10-03

申请号：US14354410

申请日：2012-10-29

Applicant: KYOCERA Corporation

Inventor： Chiaki Domoto ,  Katsuaki Masaki ,  Yutaka Kuba ,  Daisuke Ueyama ,  Kouji Miyamoto ,  Yuuichiro Hayashi

IPC: C30B15/30 ,  C30B19/04 ,  C30B29/36 ,  C30B15/10

CPC classification number: C30B15/30 ,  C30B15/10 ,  C30B19/04 ,  C30B29/36

Abstract: A method for producing a crystal, according to the present invention, where the lower surface of a seed crystal which is rotatably arranged and made of silicon carbide is brought into contact with a solution of silicon solvent containing carbon in a crucible which is rotatably arranged and the seed crystal is pulled up and a crystal of silicon carbide is grown from the solution on the lower surface of the seed crystal, comprising the steps of bringing the lower surface of the seed crystal into contact with the solution in a contact step, rotating the seed crystal in a seed crystal rotation step, rotating the crucible in a crucible rotation step, and stopping rotation of the crucible, while the seed crystal is rotated in the state in which the lower surface of the seed crystal is in contact with the solution, in a deceleration step.

公开(公告)号：US20140299046A1

公开(公告)日：2014-10-09

申请号：US14354410

申请日：2012-10-29

Applicant: KYOCERA Corporation

Inventor： Chiaki Domoto ,  Katsuaki Masaki ,  Yutaka Kuba ,  Daisuke Ueyama ,  Kouji Miyamoto ,  Yuuichiro Hayashi

IPC: C30B15/30 ,  C30B15/10

CPC classification number: C30B15/30 ,  C30B15/10 ,  C30B19/04 ,  C30B29/36

Abstract: A method for producing a crystal, according to the present invention, where the lower surface of a seed crystal which is rotatably arranged and made of silicon carbide is brought into contact with a solution of silicon solvent containing carbon in a crucible which is rotatably arranged and the seed crystal is pulled up and a crystal of silicon carbide is grown from the solution on the lower surface of the seed crystal, comprising the steps of bringing the lower surface of the seed crystal into contact with the solution in a contact step, rotating the seed crystal in a seed crystal rotation step, rotating the crucible in a crucible rotation step, and stopping rotation of the crucible, while the seed crystal is rotated in the state in which the lower surface of the seed crystal is in contact with the solution, in a deceleration step.

Abstract translation: 根据本发明的制造晶体的方法，其中可旋转地布置并由碳化硅制成的晶种的下表面与可旋转地布置的坩埚中的含有碳的硅溶剂的溶液接触， 晶种被拉起，并且晶种的下表面上的溶液生长碳化硅晶体，包括以下步骤：使晶种的下表面在接触步骤中与溶液接触，将晶圆旋转 晶种在晶种旋转步骤中，在坩埚旋转步骤中旋转坩埚，并且在晶种的下表面与溶液接触的状态下晶种旋转，停止坩埚的旋转， 在减速步骤。

公开(公告)号：US20150068444A1

公开(公告)日：2015-03-12

申请号：US14397179

申请日：2013-04-26

Applicant: KYOCERA CORPORATION

Inventor： Katsuaki Masaki ,  Yutaka Kuba ,  Chiaki Domoto

IPC: C30B15/32 ,  C30B29/36

CPC classification number: C30B15/32 ,  C30B9/00 ,  C30B19/068 ,  C30B29/36 ,  C30B35/00 ,  Y10T117/106

Abstract: A holder according to one embodiment is a holder which is used in a solution growth method of growing a crystal on a lower surface of a seed crystal by contacting the lower surface of the seed crystal with a solution of silicon including carbon in a crucible having an opening on an upper end thereof. The holder includes: a holding member which holds the seed crystal on a lower surface; the seed crystal which is held on the lower surface of the holding member, has an upper surface larger than the lower surface, and is made of silicon carbide; and a suppressing member which is fixed to a side surface of the holding member, continues from the side surface to outside further outward than an outer circumference of the seed crystal in plan view, and suppresses upward movement of vapor from the solution.

Abstract translation: 根据一个实施方案的保持器是一种保持器，其用于通过使晶种的下表面与包含碳的硅溶液接触的坩埚中将晶体生长在晶种的下表面上的溶液生长方法中，所述坩埚具有 在其上端开口。 保持器包括：保持构件，其将籽晶保持在下表面上; 保持在保持构件的下表面上的晶种具有比下表面大的上表面，并且由碳化硅制成; 并且在平面图中固定到保持构件的侧表面的抑制构件从晶种的外周向侧面向外延伸，并且抑制蒸气从溶液向上移动。

公开(公告)号：US10443149B2

公开(公告)日：2019-10-15

申请号：US15114751

申请日：2015-01-29

Applicant: KYOCERA Corporation

Inventor： Chiaki Domoto ,  Yutaka Kuba ,  Katsuaki Masaki ,  Yuuichiro Hayashi

IPC: C30B9/06 ,  C30B19/10 ,  C30B15/14 ,  C30B29/36 ,  C30B19/04 ,  C30B19/06 ,  C30B19/08 ,  C30B19/12

Abstract: A method of producing a crystal includes a step of preparing a solution containing carbon and a silicon solvent, and a seed crystal of silicon carbide; a step of contacting a lower face of the seed crystal with the solution; a step of raising a temperature of the solution to a first temperature zone; a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to a second temperature zone; a step of raising a temperature of the solution from the second temperature zone to the first temperature zone; and a step of relatively elevating the seed crystal with respect to the solution in a state where a temperature of the solution is being lowered from the first temperature zone to the second temperature zone.

公开(公告)号：US10151045B2

公开(公告)日：2018-12-11

申请号：US15649396

申请日：2017-07-13

Applicant: KYOCERA Corporation

Inventor： Chiaki Domoto ,  Katsuaki Masaki ,  Yutaka Kuba ,  Daisuke Ueyama ,  Kouji Miyamoto ,  Yuuichiro Hayashi

IPC: C30B15/30 ,  C30B19/04 ,  C30B29/36 ,  C30B15/10

Abstract: A method for producing a crystal, according to the present invention, where the lower surface 4B of a seed crystal 4 which is rotatably arranged and made of silicon carbide is brought into contact with a solution 5 of silicon solvent containing carbon in a crucible 6 which is rotatably arranged and the seed crystal 4 is pulled up and a crystal of silicon carbide is grown from the solution 5 on the lower surface 4B of the seed crystal 4, comprising the steps of bringing the lower surface 4B of the seed crystal 4 into contact with the solution 5 in a contact step, rotating the seed crystal 4 in a seed crystal rotation step, rotating the crucible 6 in a crucible rotation step, and stopping rotation of the crucible 6, while the seed crystal 4 is rotated in the state in which the lower surface 4B of the seed crystal 4 is in contact with the solution 5, in a deceleration step.

公开(公告)号：US20150211147A1

公开(公告)日：2015-07-30

申请号：US14417529

申请日：2013-07-26

Applicant: KYOCERA Corporation

Inventor： Katsuaki Masaki ,  Yutaka Kuba ,  Chiaki Domoto

IPC: C30B15/10 ,  C30B29/36

CPC classification number: C30B15/10 ,  C30B29/36 ,  Y10T117/1052

Abstract: A crucible 1 according to an embodiment of the present invention is a crucible 1 which is used in a solution growth method for growing a crystal of silicon carbide on a lower surface 3B of a seed crystal 3 from a solution 2, by accommodating the solution 2 of silicon containing carbon in the crucible 1, by allowing the lower surface 3B of the seed crystal 3 to contact with the solution 2 from above, and by pulling the seed crystal 3 upward. The crucible is made of carbon and includes a solution adjustment member 4 which is fixed to an inner wall surface 1A so as to be positioned between a bottom surface 1B and a liquid surface of the solution 2 when the crucible 1 is used and which includes a through hole 4a overlapped with an inner side of the seed crystal 3 disposed above.

Abstract translation: 根据本发明实施例的坩埚1是一种坩埚1，其用于溶液生长方法，用于通过容纳溶液2来从溶液2生长晶种3的下表面3B上的碳化硅晶体 通过使晶种3的下表面3B从上方与溶液2接触，并且通过向上拉籽晶3，在坩埚1中含硅的碳。 坩埚由碳制成，并且包括溶液调节构件4，该溶液调节构件4在使用坩埚1时固定到内壁表面1A以便定位在底表面1B和溶液2的液体表面之间，并且包括 通孔4a与设置在上方的晶种3的内侧重叠。