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1.
公开(公告)号:US20230155042A1
公开(公告)日:2023-05-18
申请号:US18153919
申请日:2023-01-12
Inventor: Jongcheol PARK , Gapseop SIM , Tae Hyun KIM , Jong-Kwon LEE , Il-Suk KANG
IPC: H01L31/028 , B82Y40/00 , H01L31/02 , H01L31/0216 , H01L31/105 , H01L31/18
CPC classification number: H01L31/028 , B82Y40/00 , H01L31/105 , H01L31/186 , H01L31/1804 , H01L31/02005 , H01L31/02161
Abstract: A silicon photodiode according to an embodiment of the present invention comprises: a silicon substrate having a first conductive area and a second conductive area horizontally spaced apart from the first conductive area; a plurality of randomly arranged metal nanoparticles formed on the silicon substrate; an antireflective layer covering the metal nanoparticles; a first contact passing through the antireflective layer and connected to the first conductive layer; and a second contact passing through the antireflective layer and connected to the second conductive layer.
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公开(公告)号:US20180212612A1
公开(公告)日:2018-07-26
申请号:US15747734
申请日:2016-07-29
Inventor: Jong Cheol PARK , Hee Yeoun KIM , Chung Mo YANG , Tae Hyun KIM
CPC classification number: H03L7/26 , B81B7/0038 , B81C2203/0118 , B81C2203/031 , G04F5/14 , H01L21/02532 , H03L1/04
Abstract: According to the present invention, since a silicon body itself supporting first and second glass substrates also has a role of an electric heating device, the temperature of the inside of a through-part can be maintained to be constant. In addition, since it is unnecessary to comprise a separate electric heating device such as a heater or to form an additional heating pattern in order to control the temperature of the inside of the through-part, a process for manufacturing a vapor cell can be simplified. According to the present invention, only a reactive material in a gas state and a buffer gas can be injected into a sealed container without the intervention of other materials, and the size of the sealed container can be reduced since it is unnecessary to prepare e separate space for mounting a pill of the reaction material in a vapor cell region itself.
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