公开(公告)号：US20230155042A1

公开(公告)日：2023-05-18

申请号：US18153919

申请日：2023-01-12

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jongcheol PARK ,  Gapseop SIM ,  Tae Hyun KIM ,  Jong-Kwon LEE ,  Il-Suk KANG

IPC: H01L31/028 ,  B82Y40/00 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/105 ,  H01L31/18

CPC classification number: H01L31/028 ,  B82Y40/00 ,  H01L31/105 ,  H01L31/186 ,  H01L31/1804 ,  H01L31/02005 ,  H01L31/02161

Abstract: A silicon photodiode according to an embodiment of the present invention comprises: a silicon substrate having a first conductive area and a second conductive area horizontally spaced apart from the first conductive area; a plurality of randomly arranged metal nanoparticles formed on the silicon substrate; an antireflective layer covering the metal nanoparticles; a first contact passing through the antireflective layer and connected to the first conductive layer; and a second contact passing through the antireflective layer and connected to the second conductive layer.