公开(公告)号：US20210278282A1

公开(公告)日：2021-09-09

申请号：US17328773

申请日：2021-05-24

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jong-Kwon LEE ,  Jae-Sub OH ,  Jongcheol PARK

IPC: G01J5/58 ,  G01J5/08 ,  G01J5/02 ,  B81B7/02

Abstract: A MEMS device according to an example embodiment of the present disclosure includes: a lower substrate; an infrared sensor formed on the lower substrate; and a lower bonding pad disposed to cover the infrared sensor. The infrared sensor includes: a metal pad formed on an upper surface of the lower substrate and electrically connected to a detection circuit; a reflective layer formed on the upper surface of the lower substrate and reflecting an infrared band; an absorption plate disposed to be spaced apart from an upper portion of the reflective layer and absorbing infrared rays to change resistance; and an anchor formed on the metal pad to support the absorption plate and to electrically connect the metal pad and the absorption plate to each other. The reflective layer has a curved or stepped shape such that a distance between the reflective layer and the absorption plate varies depending on a position of the reflective layer.

公开(公告)号：US20230155042A1

公开(公告)日：2023-05-18

申请号：US18153919

申请日：2023-01-12

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jongcheol PARK ,  Gapseop SIM ,  Tae Hyun KIM ,  Jong-Kwon LEE ,  Il-Suk KANG

IPC: H01L31/028 ,  B82Y40/00 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/105 ,  H01L31/18

CPC classification number: H01L31/028 ,  B82Y40/00 ,  H01L31/105 ,  H01L31/186 ,  H01L31/1804 ,  H01L31/02005 ,  H01L31/02161

Abstract: A silicon photodiode according to an embodiment of the present invention comprises: a silicon substrate having a first conductive area and a second conductive area horizontally spaced apart from the first conductive area; a plurality of randomly arranged metal nanoparticles formed on the silicon substrate; an antireflective layer covering the metal nanoparticles; a first contact passing through the antireflective layer and connected to the first conductive layer; and a second contact passing through the antireflective layer and connected to the second conductive layer.