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1.发明申请Method for Reducing Wafer Shape and Thickness Measurement Errors Resulted From Cavity Shape Changes 有权降低由形状变化导致的晶圆形状和厚度测量误差的方法公开(公告)号：US20130182262A1
公开(公告)日：2013-07-18
申请号：US13742113
申请日：2013-01-15
Applicant: KLA-Tencor Corporation
Inventor： Shouhong Tang , Andrew An Zeng , Yi Zhang , Jie-Fei Zheng
IPC: G01B9/02
CPC classification number: G01B9/02076 , G01B9/02027
Abstract: Methods and systems for reducing wafer shape and thickness measurement errors resulted from cavity shape changes are disclosed. Cavity calibration process is performed immediately before the wafer measurement. Calibrating the cavity characteristics every time the method is executed reduces wafer shape and thickness measurement errors resulted from cavity shape changes. Additionally or alternatively, a polynomial fitting process utilizing a polynomial of at least a second order is utilized for cavity tilt estimation. High order cavity shape information generated using high order polynomials takes into consideration cavity shape changes due to temperature variations, stress or the like, effectively increases accuracy of the wafer shape and thickness information computed.
Abstract translation: 公开了用于减小由腔形变化导致的晶片形状和厚度测量误差的方法和系统。 在晶片测量之前立即进行腔校准处理。 每次执行该方法时校准腔体特性可降低由腔体形状变化导致的晶片形状和厚度测量误差。 附加地或替代地，利用至少二阶多项式的多项式拟合过程用于腔倾斜估计。 使用高阶多项式生成的高阶腔形状信息考虑到由于温度变化，应力等引起的空腔形状变化，有效地提高了计算出的晶片形状和厚度信息的精度。
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Patent Agency Ranking
公开(公告)号：US09903708B2
公开(公告)日：2018-02-27
申请号：US15063057
申请日：2016-03-07
Applicant: KLA-Tencor Corporation
Inventor： Chunhai Wang , Chunsheng Huang , Andrew An Zeng , Frederick Arnold Goodman , Shouhong Tang , Yi Zhang
CPC classification number: G01B11/06 , G01B9/02021 , G01B9/0203 , G01B11/24 , G01B11/2441 , G01B2290/70 , G02B17/008 , G02B27/283 , H04N5/225
Abstract: A semiconductor measuring tool has a folding mirror configuration that directs a light beam to pass the same space multiple times to reduce the size and footprint. Furthermore, the folding mirrors may reflect the light beam at less than forty-five degrees; thereby allowing for smaller folding mirrors as compared to the prior art.
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3.发明申请Method and Apparatus to Fold Optics in Tools for Measuring Shape and/or Thickness of a Large and Thin Substrate 有权用于测量大薄薄基板的形状和/或厚度的工具中折叠光学的方法和装置公开(公告)号：US20160265904A1
公开(公告)日：2016-09-15
申请号：US15063057
申请日：2016-03-07
Applicant: KLA-Tencor Corporation
Inventor： Chunhai Wang , Chunsheng Huang , Andrew An Zeng , Frederick Arnold Goodman , Shouhong Tang , Yi Zhang
CPC classification number: G01B11/06 , G01B9/02021 , G01B9/0203 , G01B11/24 , G01B11/2441 , G01B2290/70 , G02B17/008 , G02B27/283 , H04N5/225
Abstract: A semiconductor measuring tool has a folding mirror configuration that directs a light beam to pass the same space multiple times to reduce the size and footprint. Furthermore, the folding mirrors may reflect the light beam at less than forty-five degrees; thereby allowing for smaller folding mirrors as compared to the prior art.
Abstract translation: 半导体测量工具具有折射镜配置，其引导光束多次通过相同的空间以减小尺寸和占地面积。 此外，折叠镜可以以小于四十五度反射光束; 从而允许与现有技术相比较小的折叠镜。
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4.发明授权公开(公告)号：US09163928B2
公开(公告)日：2015-10-20
申请号：US13864701
申请日：2013-04-17
Applicant: KLA-Tencor Corporation
Inventor： Shouhong Tang , Chunhai Wang , Andrew An Zeng
CPC classification number: G01B9/02072 , G01B9/02021 , G01B9/02027 , G01B11/06 , G01B11/2441
Abstract: A calibration wafer and a method for calibrating an interferometer system are disclosed. The calibration method includes: determining locations of the holes defined in the calibration wafer based on two opposite intensity frame; comparing the locations of the holes against the locations measured utilizing an external measurement device; adjusting a first optical magnification or a second optical magnification at least partially based on the comparison result; defining a distortion map for each of the first and second intensity frames based on the comparison of the locations of the holes; generating an extended distortion map for each of the first and second intensity frames by map fitting the distortion map; and utilizing the extended distortion map for each of the first and second intensity frames to reduce at least one of: a registration error or an optical distortion in a subsequent measurement process.
Abstract translation: 公开了一种用于校准干涉仪系统的校准晶片和方法。 校准方法包括：基于两个相对强度的帧确定校准晶片中限定的孔的位置; 比较孔的位置与使用外部测量装置测量的位置; 至少部分地基于比较结果调整第一光学倍率或第二光学倍率; 基于孔的位置的比较来定义第一和第二强度帧中的每一个的失真图; 通过映射拟合失真图来生成第一和第二强度帧中的每一个的扩展失真图; 以及利用所述第一和第二强度帧中的每一个的所述扩展失真图来减少随后测量过程中的注册误差或光学失真中的至少一个。
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5.发明授权Method for reducing wafer shape and thickness measurement errors resulted from cavity shape changes 有权降低晶体形状和厚度测量误差的方法是由腔形变化引起的公开(公告)号：US09121684B2
公开(公告)日：2015-09-01
申请号：US13742113
申请日：2013-01-15
Applicant: KLA-Tencor Corporation
Inventor： Shouhong Tang , Andrew An Zeng , Yi Zhang , Jie-Fei Zheng
CPC classification number: G01B9/02076 , G01B9/02027
Abstract: Methods and systems for reducing wafer shape and thickness measurement errors resulted from cavity shape changes are disclosed. Cavity calibration process is performed immediately before the wafer measurement. Calibrating the cavity characteristics every time the method is executed reduces wafer shape and thickness measurement errors resulted from cavity shape changes. Additionally or alternatively, a polynomial fitting process utilizing a polynomial of at least a second order is utilized for cavity tilt estimation. High order cavity shape information generated using high order polynomials takes into consideration cavity shape changes due to temperature variations, stress or the like, effectively increases accuracy of the wafer shape and thickness information computed.
Abstract translation: 公开了用于减小由腔形变化导致的晶片形状和厚度测量误差的方法和系统。 在晶片测量之前立即进行腔校准处理。 每次执行该方法时校准腔体特性可降低由腔体形状变化导致的晶片形状和厚度测量误差。 附加地或替代地，利用至少二阶多项式的多项式拟合过程用于腔倾斜估计。 使用高阶多项式生成的高阶腔形状信息考虑到由于温度变化，应力等引起的空腔形状变化，有效地提高了计算出的晶片形状和厚度信息的精度。
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6.发明申请公开(公告)号：US20140313516A1
公开(公告)日：2014-10-23
申请号：US13864701
申请日：2013-04-17
Applicant: KLA-Tencor Corporation
Inventor： Shouhong Tang , Chunhai Wang , Andrew An Zeng
IPC: G01B9/02
CPC classification number: G01B9/02072 , G01B9/02021 , G01B9/02027 , G01B11/06 , G01B11/2441
Abstract: A calibration wafer and a method for calibrating an interferometer system are disclosed. The calibration method includes: determining locations of the holes defined in the calibration wafer based on two opposite intensity frame; comparing the locations of the holes against the locations measured utilizing an external measurement device; adjusting a first optical magnification or a second optical magnification at least partially based on the comparison result; defining a distortion map for each of the first and second intensity frames based on the comparison of the locations of the holes; generating an extended distortion map for each of the first and second intensity frames by map fitting the distortion map; and utilizing the extended distortion map for each of the first and second intensity frames to reduce at least one of: a registration error or an optical distortion in a subsequent measurement process.
Abstract translation: 公开了一种用于校准干涉仪系统的校准晶片和方法。 校准方法包括：基于两个相对强度的帧确定校准晶片中限定的孔的位置; 比较孔的位置与使用外部测量装置测量的位置; 至少部分地基于比较结果调整第一光学倍率或第二光学倍率; 基于孔的位置的比较来定义第一和第二强度帧中的每一个的失真图; 通过映射拟合失真图来生成第一和第二强度帧中的每一个的扩展失真图; 以及利用所述第一和第二强度帧中的每一个的所述扩展失真图来减少随后测量过程中的注册误差或光学失真中的至少一个。
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