Invention Grant
US09121684B2 Method for reducing wafer shape and thickness measurement errors resulted from cavity shape changes
有权
降低晶体形状和厚度测量误差的方法是由腔形变化引起的
- Patent Title: Method for reducing wafer shape and thickness measurement errors resulted from cavity shape changes
- Patent Title (中): 降低晶体形状和厚度测量误差的方法是由腔形变化引起的
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Application No.: US13742113Application Date: 2013-01-15
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Publication No.: US09121684B2Publication Date: 2015-09-01
- Inventor: Shouhong Tang , Andrew An Zeng , Yi Zhang , Jie-Fei Zheng
- Applicant: KLA-Tencor Corporation
- Applicant Address: US CA Milpitas
- Assignee: KLA-Tencor Corporation
- Current Assignee: KLA-Tencor Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Suiter Swantz pc llo
- Main IPC: G01B11/02
- IPC: G01B11/02 ; G01B9/02

Abstract:
Methods and systems for reducing wafer shape and thickness measurement errors resulted from cavity shape changes are disclosed. Cavity calibration process is performed immediately before the wafer measurement. Calibrating the cavity characteristics every time the method is executed reduces wafer shape and thickness measurement errors resulted from cavity shape changes. Additionally or alternatively, a polynomial fitting process utilizing a polynomial of at least a second order is utilized for cavity tilt estimation. High order cavity shape information generated using high order polynomials takes into consideration cavity shape changes due to temperature variations, stress or the like, effectively increases accuracy of the wafer shape and thickness information computed.
Public/Granted literature
- US20130182262A1 Method for Reducing Wafer Shape and Thickness Measurement Errors Resulted From Cavity Shape Changes Public/Granted day:2013-07-18
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