Abstract:
A computer-implemented method for determining an optimized purge gas flow in a semi-conductor inspection metrology or lithography apparatus, comprising receiving a permissible contaminant mole fraction, a contaminant outgassing flow rate associated with a contaminant, a contaminant mass diffusivity, an outgassing surface length, a pressure, a temperature, a channel height, and a molecular weight of a purge gas, calculating a flow factor based on the permissible contaminant mole fraction, the contaminant outgassing flow rate, the channel height, and the outgassing surface length, comparing the flow factor to a predefined maximum flow factor value, calculating a minimum purge gas velocity and a purge gas mass flow rate from the flow factor, the contaminant mass diffusivity, the pressure, the temperature, and the molecular weight of the purge gas, and introducing the purge gas into the semi-conductor inspection metrology or lithography apparatus with the minimum purge gas velocity and the purge gas flow rate.
Abstract:
An apparatus for shielding a controlled pressure environment, including a shield assembly with: a gate disc arranged for location in a chamber and including a first continuous surface facing an opening in the chamber and including an outer circumference extending past the opening in a radial direction orthogonal to a longitudinal axis passing through the chamber and the opening; and an at least one actuator arranged to displace the gate disc in an axial direction parallel to the longitudinal axis. The opening is arranged for connection to an inlet of a vacuum pump. In an example embodiment, the thermal system attains and maintains thermal equilibrium in the chamber and/or to shields the chamber from unwanted thermal affects by heating or cooling the gate disc to offset cooling or heat generated by the vacuum pump. For example, the gate disc is cooled to offset heat generated by a turbo-molecular pump.
Abstract:
Substrate support apparatus and methods are disclosed. Motion of a substrate chuck relative to a stage mirror may be dynamically compensated by sensing a displacement of the substrate chuck relative to the stage mirror and coupling a signal proportional to the displacement in one or more feedback loops with Z stage actuators and/or XY stage actuators coupled to the stage mirror. Alternatively, a substrate support apparatus may include a Z stage plate a stage mirror, one or more actuators attached to the Z stage plate, and a substrate chuck mounted to the stage mirror with constraints on six degrees of freedom of movement of the substrate chuck. The actuators impart movement to the Z stage in a Z direction as the Z stage plate is scanned in a plane perpendicular to the Z direction. The actuators may include force flexures having a base portion attached to the Z stage plate and a cantilever portion extending in a lateral direction from the base portion. The cantilever portion may include a parallelogram flexure coupled between the base portion and a free end of the cantilever portion.
Abstract:
A computer-implemented method for determining an optimized purge gas flow in a semi-conductor inspection metrology or lithography apparatus, comprising receiving a permissible contaminant mole fraction, a contaminant outgassing flow rate associated with a contaminant, a contaminant mass diffusivity, an outgassing surface length, a pressure, a temperature, a channel height, and a molecular weight of a purge gas, calculating a flow factor based on the permissible contaminant mole fraction, the contaminant outgassing flow rate, the channel height, and the outgassing surface length, comparing the flow factor to a predefined maximum flow factor value, calculating a minimum purge gas velocity and a purge gas mass flow rate from the flow factor, the contaminant mass diffusivity, the pressure, the temperature, and the molecular weight of the purge gas, and introducing the purge gas into the semi-conductor inspection metrology or lithography apparatus with the minimum purge gas velocity and the purge gas flow rate.
Abstract:
The present invention provides a local clean microenvironment near optical surfaces of an extreme ultraviolet (EUV) optical assembly maintained in a vacuum process chamber and configured for EUV lithography, metrology, or inspection. The system includes one or more EUV optical assemblies including at least one optical element with an optical surface, a supply of cleaning gas stored remotely from the one or more optical assemblies and a gas delivery unit comprising: a plenum chamber, one or more gas delivery lines connecting the supply of gas to the plenum chamber, one or more delivery nozzles configured to direct cleaning gas from the plenum chamber to a portion of the EUV assembly, and one or more collection nozzles for removing gas from the EUV optical assembly and the vacuum process chamber.
Abstract:
The present invention provides a local clean microenvironment near optical surfaces of an extreme ultraviolet (EUV) optical assembly maintained in a vacuum process chamber and configured for EUV lithography, metrology, or inspection. The system includes one or more EUV optical assemblies including at least one optical element with an optical surface, a supply of cleaning gas stored remotely from the one or more optical assemblies and a gas delivery unit comprising: a plenum chamber, one or more gas delivery lines connecting the supply of gas to the plenum chamber, one or more delivery nozzles configured to direct cleaning gas from the plenum chamber to a portion of the EUV assembly, and one or more collection nozzles for removing gas from the EUV optical assembly and the vacuum process chamber.
Abstract:
An apparatus for shielding a controlled pressure environment, including a shield assembly with: a gate disc arranged for location in a chamber and including a first continuous surface facing an opening in the chamber and including an outer circumference extending past the opening in a radial direction orthogonal to a longitudinal axis passing through the chamber and the opening; and an at least one actuator arranged to displace the gate disc in an axial direction parallel to the longitudinal axis. The opening is arranged for connection to an inlet of a vacuum pump. In an example embodiment, the thermal system attains and maintains thermal equilibrium in the chamber and/or to shields the chamber from unwanted thermal affects by heating or cooling the gate disc to offset cooling or heat generated by the vacuum pump. For example, the gate disc is cooled to offset heat generated by a turbo-molecular pump.