公开(公告)号：US09343495B2

公开(公告)日：2016-05-17

申请号：US14194422

申请日：2014-02-28

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Takaaki Minami ,  Shoichi Hirooka

IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L27/146

CPC分类号： H01L27/14629 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689

摘要： A solid-state imaging device includes a semiconductor layer, a reflector, and a plurality of element separating regions. In the semiconductor layer, a plurality of photoelectric conversion elements is arranged in a two-dimensional array. The reflector covers a surface of the semiconductor layer on a side opposite to a surface of the semiconductor layer on which alight is incident, and reflects the light. The element separating regions are formed in the semiconductor layer to physically and electrically separate the plurality of photoelectric conversion elements. Each of the element separating regions extend from the surface of the semiconductor layer on which the light is incident to the reflector and has a reflection surface for reflecting light.

摘要翻译： 固态成像装置包括半导体层，反射器和多个元件分离区域。 在半导体层中，以二维阵列布置多个光电转换元件。 反射器覆盖半导体层的与入射到其上的半导体层的表面相对的一侧的表面，并且反射光。 元件分离区形成在半导体层中以物理和电分离多个光电转换元件。 每个元件分离区域从其中入射到反射器的半导体层的表面延伸并且具有用于反射光的反射表面。

公开(公告)号：US09219175B2

公开(公告)日：2015-12-22

申请号：US14201985

申请日：2014-03-10

申请人： Kabushiki Kaisha Toshiba

发明人： Hiroyuki Fukumizu ,  Takaaki Minami ,  Kentaro Eda ,  Takeshi Yosho

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L31/0232 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/18

摘要： According to one embodiment, an imaging device includes a semiconductor layer, an electrode, first and second insulating films, and a light blocking film. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface, and includes pixels configured to detect light. The electrode is provided on the first surface and is configured to control an output of the pixels. The first insulating film is provided on the second surface. The second insulating film is provided on the first insulating film and has a smaller refractive index in a visible light range than the first insulating film. One end of the light blocking film is located in the second insulating film or at a same level as a surface of the second insulating film. Another end of the light blocking film is located in the semiconductor layer.

摘要翻译： 根据一个实施例，成像装置包括半导体层，电极，第一和第二绝缘膜以及遮光膜。 半导体层具有与第一表面相对的第一表面和第二表面，并且包括被配置为检测光的像素。 电极设置在第一表面上并且被配置为控制像素的输出。 第一绝缘膜设置在第二表面上。 第二绝缘膜设置在第一绝缘膜上，并且在可见光范围内具有比第一绝缘膜更小的折射率。 遮光膜的一端位于第二绝缘膜中或与第二绝缘膜的表面相同的水平。 遮光膜的另一端位于半导体层中。

公开(公告)号：US20150255665A1

公开(公告)日：2015-09-10

申请号：US14631002

申请日：2015-02-25

申请人： Kabushiki Kaisha Toshiba

发明人： Hiroyuki FUKUMIZU ,  Yoshio Kasai ,  Takaaki Minami ,  Kenichi Yoshino ,  Yosuke Kitamura ,  Yusaku Konno ,  Koichi Kawamura ,  Satoshi Kato ,  Naoaki Sakurai

IPC分类号： H01L31/18 ,  H01L27/146

CPC分类号： H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14685

摘要： According to one embodiment, a laser heating treatment method includes forming a film having a higher melting point than a structural body provided on a substrate so as to cover the structural body, and heating the structural body by irradiating the film and the structural body with laser.

摘要翻译： 根据一个实施例，激光加热处理方法包括形成具有比设置在基板上的结构体更高的熔点以覆盖结构体的膜，并且通过用激光照射膜和结构体来加热结构体 。

公开(公告)号：US20150001660A1

公开(公告)日：2015-01-01

申请号：US14201985

申请日：2014-03-10

申请人： Kabushiki Kaisha Toshiba

发明人： Hiroyuki Fukumizu ,  Takaaki Minami ,  Kentaro Eda ,  Takeshi Yosho

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L31/0232 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/18

摘要： According to one embodiment, an imaging device includes a semiconductor layer, an electrode, first and second insulating films, and a light blocking film. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface, and includes pixels configured to detect light. The electrode is provided on the first surface and is configured to control an output of the pixels. The first insulating film is provided on the second surface. The second insulating film is provided on the first insulating film and has a smaller refractive index in a visible light range than the first insulating film. One end of the light blocking film is located in the second insulating film or at a same level as a surface of the second insulating film. Another end of the light blocking film is located in the semiconductor layer.

摘要翻译： 根据一个实施例，成像装置包括半导体层，电极，第一和第二绝缘膜以及遮光膜。 半导体层具有与第一表面相对的第一表面和第二表面，并且包括被配置为检测光的像素。 电极设置在第一表面上并且被配置为控制像素的输出。 第一绝缘膜设置在第二表面上。 第二绝缘膜设置在第一绝缘膜上，并且在可见光范围内具有比第一绝缘膜更小的折射率。 遮光膜的一端位于第二绝缘膜中或与第二绝缘膜的表面相同的水平。 遮光膜的另一端位于半导体层中。