公开(公告)号：US09111833B2

公开(公告)日：2015-08-18

申请号：US13867241

申请日：2013-04-22

Applicant: Kabushiki Kaisha Toshiba

Inventor： Yosuke Kitamura ,  Hisashi Aikawa ,  Kazunori Kakehi

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14623 ,  H01L27/14645 ,  H01L27/14689

Abstract: According to one embodiment, a method of manufacturing a solid-state imaging device includes a trench forming process, a concave portion forming process, a coating process, and a burying process. In the trench forming process, a trench is formed at the position to isolate a plurality of photoelectric conversion elements. In the concave portion forming process, a concave portion is formed at the position to form a light shielding film of shielding at least part of subject light incident on an adjustment photoelectric conversion element used for an image quality adjustment of an imaged image. In the coating process, inner circumferential surfaces of the trench and the concave portion are coated with an insulating film. In the burying process, a light shielding member is buried inside the trench and the concave portion whose inner circumferential surface are coated with the insulating film.

Abstract translation: 根据一个实施例，制造固态成像装置的方法包括沟槽成形工艺，凹部形成工艺，涂覆工艺和掩埋工艺。 在沟槽形成工艺中，在隔离多个光电转换元件的位置处形成沟槽。 在凹部形成处理中，在该位置形成凹部，以形成屏蔽入射到用于成像图像的图像质量调整的调整光电转换元件的被摄体光的至少一部分的遮光膜。 在涂布过程中，沟槽和凹部的内圆周表面涂有绝缘膜。 在掩埋处理中，遮光部件埋设在沟槽内部，内侧表面涂覆有绝缘膜的凹部。

公开(公告)号：US20140183606A1

公开(公告)日：2014-07-03

申请号：US13904448

申请日：2013-05-29

Applicant: Kabushiki Kaisha Toshiba

Inventor： Kazunori KAKEHI ,  Hisashi Aikawa ,  Yosuke Kitamura

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464

Abstract: According to an embodiment of the invention, there is provided a method of manufacturing a semiconductor device. The method of manufacturing the semiconductor device includes forming a trench downward from an upper face of a semiconductor layer at a position where an element isolation area is formed in the semiconductor layer, and melting the upper face of the trench-formed semiconductor layer to close an open end of the trench.

Abstract translation: 根据本发明的实施例，提供了一种制造半导体器件的方法。 制造半导体器件的方法包括在半导体层中形成元件隔离区域的位置处从半导体层的上表面向下形成沟槽，并且熔化沟槽形成的半导体层的上表面以封闭 开口的沟槽。

公开(公告)号：US20150255665A1

公开(公告)日：2015-09-10

申请号：US14631002

申请日：2015-02-25

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hiroyuki FUKUMIZU ,  Yoshio Kasai ,  Takaaki Minami ,  Kenichi Yoshino ,  Yosuke Kitamura ,  Yusaku Konno ,  Koichi Kawamura ,  Satoshi Kato ,  Naoaki Sakurai

IPC: H01L31/18 ,  H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14685

Abstract: According to one embodiment, a laser heating treatment method includes forming a film having a higher melting point than a structural body provided on a substrate so as to cover the structural body, and heating the structural body by irradiating the film and the structural body with laser.

Abstract translation: 根据一个实施例，激光加热处理方法包括形成具有比设置在基板上的结构体更高的熔点以覆盖结构体的膜，并且通过用激光照射膜和结构体来加热结构体 。