公开(公告)号：US20160027682A1

公开(公告)日：2016-01-28

申请号：US14636000

申请日：2015-03-02

Applicant: Kabushiki Kaisha Toshiba

Inventor： Shintaro Okujo ,  Kenichi Yoshino ,  Hiroyuki Fukumizu ,  Satoshi Kato

IPC: H01L21/762 ,  H01L27/146

CPC classification number: H01L21/76227 ,  H01L21/763 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14683

Abstract: According to the embodiments, a manufacturing method for a semiconductor device includes forming recessed parts on a surface of a semiconductor layer. The manufacturing method for the semiconductor device includes a process for forming a buffer layer, which has a melting point lower than that of the semiconductor layer, on a surface of the recessed part on the surface of the semiconductor layer. The manufacturing method for the semiconductor device includes a process for forming a high-melting point film, which has the melting point higher than that of the semiconductor layer, on the buffer layer and fills the recessed part with the high-melting point film. The manufacturing method for the semiconductor device includes a process for heating the semiconductor layer having the buffer layer and the high-melting point film formed thereon at a temperature equal to or higher than the melting point of the buffer layer.

Abstract translation: 根据实施例，半导体器件的制造方法包括在半导体层的表面上形成凹部。 半导体器件的制造方法包括在半导体层的表面上的凹部的表面上形成熔点低于半导体层的缓冲层的工序。 半导体器件的制造方法包括在缓冲层上形成熔点高于半导体层的熔点的高熔点膜的方法，并用高熔点膜填充凹部。 半导体器件的制造方法包括在等于或高于缓冲层的熔点的温度下加热具有缓冲层的半导体层和形成在其上的高熔点膜的工艺。

公开(公告)号：US20140217515A1

公开(公告)日：2014-08-07

申请号：US14175797

申请日：2014-02-07

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Takayuki Ito ,  Kenichi Yoshino ,  Tomoya Sanuki ,  Hiroshi Ohno

IPC: H01L21/02 ,  H01L27/088

CPC classification number: H01L21/268 ,  H01L21/02694 ,  H01L21/2251 ,  H01L21/2254 ,  H01L21/28123 ,  H01L21/823412 ,  H01L27/0207 ,  H01L27/088

Abstract: According to embodiments, there is provided a semiconductor device, including: a first area including plural transistors formed therein; and a second area including plural dummy transistors formed therein, the second area surrounding the first area, wherein a pitch of the dummy transistors is equal to or less than a central wavelength of a light used to form the transistors.

Abstract translation: 根据实施例，提供了一种半导体器件，包括：形成在其中的多个晶体管的第一区域; 以及包括形成在其中的多个虚设晶体管的第二区域，围绕第一区域的第二区域，其中虚设晶体管的间距等于或小于用于形成晶体管的光的中心波长。

公开(公告)号：US20150311079A1

公开(公告)日：2015-10-29

申请号：US14792395

申请日：2015-07-06

Applicant: Kabushiki Kaisha Toshiba

Inventor： Takayuki Ito ,  Kenichi Yoshino ,  Tomoya Sanuki ,  Hiroshi Ohno

IPC: H01L21/268 ,  H01L21/8234 ,  H01L21/225

CPC classification number: H01L21/268 ,  H01L21/02694 ,  H01L21/2251 ,  H01L21/2254 ,  H01L21/28123 ,  H01L21/823412 ,  H01L27/0207 ,  H01L27/088

Abstract: According to embodiments, there is provided a semiconductor device, including: a first area including plural transistors formed therein; and a second area including plural dummy transistors formed therein, the second area surrounding the first area, wherein a pitch of the dummy transistors is equal to or less than a central wavelength of a light used to form the transistors.

Abstract translation: 根据实施例，提供了一种半导体器件，包括：形成在其中的多个晶体管的第一区域; 以及包括形成在其中的多个虚设晶体管的第二区域，围绕第一区域的第二区域，其中虚设晶体管的间距等于或小于用于形成晶体管的光的中心波长。

公开(公告)号：US20150255665A1

公开(公告)日：2015-09-10

申请号：US14631002

申请日：2015-02-25

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hiroyuki FUKUMIZU ,  Yoshio Kasai ,  Takaaki Minami ,  Kenichi Yoshino ,  Yosuke Kitamura ,  Yusaku Konno ,  Koichi Kawamura ,  Satoshi Kato ,  Naoaki Sakurai

IPC: H01L31/18 ,  H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14685

Abstract: According to one embodiment, a laser heating treatment method includes forming a film having a higher melting point than a structural body provided on a substrate so as to cover the structural body, and heating the structural body by irradiating the film and the structural body with laser.

Abstract translation: 根据一个实施例，激光加热处理方法包括形成具有比设置在基板上的结构体更高的熔点以覆盖结构体的膜，并且通过用激光照射膜和结构体来加热结构体 。