A solid-state imaging device includes a semiconductor layer, a reflector, and a plurality of element separating regions. In the semiconductor layer, a plurality of photoelectric conversion elements is arranged in a two-dimensional array. The reflector covers a surface of the semiconductor layer on a side opposite to a surface of the semiconductor layer on which alight is incident, and reflects the light. The element separating regions are formed in the semiconductor layer to physically and electrically separate the plurality of photoelectric conversion elements. Each of the element separating regions extend from the surface of the semiconductor layer on which the light is incident to the reflector and has a reflection surface for reflecting light.