公开(公告)号：US20090096045A1

公开(公告)日：2009-04-16

申请号：US12335271

申请日：2008-12-15

申请人： Jun HAYAKAWA ,  Hideo Ohno ,  Shoji Ikeda

发明人： Jun HAYAKAWA ,  Hideo Ohno ,  Shoji Ikeda

IPC分类号： H01L29/82 ,  G11C11/22 ,  G11C11/16

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01L43/10

摘要： A fast and very low-power-consuming nonvolatile memory. A nonvolatile magnetic memory includes a high-output tunnel magnetoresistive device, in which spin-transfer torque is used for writing. A tunnel magnetoresistive device has a structure such that a ferromagnetic film of a body-centered cubic structure containing Co, Fe, and B, a MgO insulator film of a rock-salt structure oriented in (100), and a ferromagnetic film are stacked.

摘要翻译： 快速且功耗非常低的非易失性存储器。 非易失性磁存储器包括高输出隧道磁阻器件，其中使用自旋转移转矩来进行写入。 隧道磁阻器件具有这样的结构，使得包含Co，Fe和B的体心立方结构的铁磁膜，（100）中取向的岩盐结构的MgO绝缘膜和铁磁膜被堆叠。

公开(公告)号：US20080105938A1

公开(公告)日：2008-05-08

申请号：US11905789

申请日：2007-10-04

申请人： Hideo Ohno ,  Shoji Ikeda ,  Jun Hayakawa

发明人： Hideo Ohno ,  Shoji Ikeda ,  Jun Hayakawa

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/16 ,  H01L27/228

摘要： A magnetic memory cell and a magnetic random access memory that are highly reliable and low-power consuming. An upper electrode having a connecting area smaller than the area of a ferromagnetic free layer of a magnetic memory cell is connected to the ferromagnetic free layer. A current is applied to produce an uneven magnetic field over the magnetic memory cell, whereby spin-transfer torque magnetization reversal can be realized with low current and at small write error rate.

摘要翻译： 磁存储单元和磁性随机存取存储器是高可靠性和低功耗的。 具有小于磁存储单元的铁磁性自由层的面积的连接面积的上部电极连接到铁磁性自由层。 施加电流以在磁存储单元上产生不均匀的磁场，由此可以以低电流和小的写错误率实现自旋转移转矩磁化反转。

公开(公告)号：US07759750B2

公开(公告)日：2010-07-20

申请号：US11790211

申请日：2007-04-24

申请人： Jun Hayakawa ,  Hideo Ohno ,  Shoji Ikeda

发明人： Jun Hayakawa ,  Hideo Ohno ,  Shoji Ikeda

IPC分类号： H01L29/82 ,  G11C11/02

CPC分类号： H01F10/3254 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3268 ,  H01F10/329 ,  Y10T428/1121

摘要： To provide a highly-reliable, low-power-consumption nonvolatile memory. A magnetization reversal of a ferromagnetic free layer is accomplished with a spin transfer torque in a state where an appropriate magnetic field is applied in a direction orthogonal to the direction of the magnetic easy axis of the ferromagnetic free layer of the tunnel magnetoresistance device that the magnetic memory cell includes. Preferably, the magnetic field is applied in a direction forming an angle of 45° with the direction perpendicular to the film plane.

摘要翻译： 提供高可靠性，低功耗的非易失性存储器。 铁磁自由层的磁化反转在自旋转移转矩下完成，其中在与隧道磁阻器件的铁磁性自由层的易磁化轴的方向正交的方向上施加适当的磁场， 存储单元包括。 优选地，在垂直于膜平面的方向上，沿形成45°角的方向施加磁场。

公开(公告)号：US20070254188A1

公开(公告)日：2007-11-01

申请号：US11790211

申请日：2007-04-24

申请人： Jun Hayakawa ,  Hideo Ohno ,  Shoji Ikeda

发明人： Jun Hayakawa ,  Hideo Ohno ,  Shoji Ikeda

IPC分类号： G11B5/39

CPC分类号： H01F10/3254 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3268 ,  H01F10/329 ,  Y10T428/1121

摘要： To provide a highly-reliable, low-power-consumption nonvolatile memory. A magnetization reversal of a ferromagnetic free layer is accomplished with a spin transfer torque in a state where an appropriate magnetic field is applied in a direction orthogonal to the direction of the magnetic easy axis of the ferromagnetic free layer of the tunnel magnetoresistance device that the magnetic memory cell includes. Preferably, the magnetic field is applied in a direction forming an angle of 45° with the direction perpendicular to the film plane.

摘要翻译： 提供高可靠性，低功耗的非易失性存储器。 铁磁自由层的磁化反转在自旋转移转矩下完成，其中在与隧道磁阻器件的铁磁性自由层的易磁化轴的方向正交的方向上施加适当的磁场， 存储单元包括。 优选地，在垂直于膜平面的方向上，沿形成45°角的方向施加磁场。

公开(公告)号：US08217477B2

公开(公告)日：2012-07-10

申请号：US12318243

申请日：2008-12-23

申请人： Hideo Ohno ,  Shoji Ikeda ,  Jun Hayakawa

发明人： Hideo Ohno ,  Shoji Ikeda ,  Jun Hayakawa

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228

摘要： Provided is a reliable nonvolatile memory with a lower power consumption. A ferromagnetic interconnection which is magnetized antiparallel or parallel to a magnetization direction of a ferromagnetic pinned layer in a giant magnetoresistive device or a tunnel magnetoresistive device constituting the magnetic memory cell, is connected to a ferromagnetic free layer with a non-magnetic layer being interposed in between, the ferromagnetic free layer serving as a recording layer. Thereby, the magnetization of the recording layer is switched by use of a spin transfer torque.

摘要翻译： 提供了具有较低功耗的可靠的非易失性存储器。 在构成磁存储单元的巨磁电阻器件或隧道磁阻器件中被磁化反并联或平行于铁磁性钉扎层的磁化方向的铁磁互连连接到铁磁自由层，其中非磁性层插入 作为记录层的铁磁自由层之间。 由此，通过使用自旋转移转矩来切换记录层的磁化。

公开(公告)号：US20070025029A1

公开(公告)日：2007-02-01

申请号：US11493892

申请日：2006-07-27

申请人： Jun Hayakawa ,  Hideo Ohno ,  Shoji Ikeda

发明人： Jun Hayakawa ,  Hideo Ohno ,  Shoji Ikeda

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01L43/10

摘要： A fast and very low-power-consuming nonvolatile memory. A nonvolatile magnetic memory includes a high-output tunnel magnetoresistive device, in which spin-transfer torque is used for writing. A tunnel magnetoresistive device has a structure such that a ferromagnetic film of a body-centered cubic structure containing Co, Fe, and B, a MgO insulator film of a rock-salt structure oriented in (100), and a ferromagnetic film are stacked.

摘要翻译： 快速且功耗非常低的非易失性存储器。 非易失性磁存储器包括高输出隧道磁阻器件，其中使用自旋转移转矩来进行写入。 隧道磁阻器件具有这样的结构，使得包含Co，Fe和B的体心立方结构的铁磁膜，（100）中取向的岩盐结构的MgO绝缘膜和铁磁膜被堆叠。

公开(公告)号：US20100034014A1

公开(公告)日：2010-02-11

申请号：US12185983

申请日：2008-08-05

申请人： Hideo Ohno ,  Shoji Ikeda ,  Young Min Lee ,  Jun Hayakawa

发明人： Hideo Ohno ,  Shoji Ikeda ,  Young Min Lee ,  Jun Hayakawa

IPC分类号： G11C11/00 ,  H01L29/82

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228

摘要： Provided is a high-speed and ultra-low-power-consumption nonvolatile memory having a high temperature stability at a zero magnetic field. In a tunnel magnetoresistive film constituting a nonvolatile magnetic memory that employs a writing method using a spin-transfer torque, an insulating layer and a nonmagnetic conductive layer are stacked above a ferromagnetic free layer.

摘要翻译： 提供了一种在零磁场下具有高温度稳定性的高速和超低功耗的非易失性存储器。 在构成使用了自旋转移转矩的写入方式的非易失性磁存储器的隧道磁阻膜中，绝缘层和非磁性导电层堆积在铁磁性自由层的上方。

公开(公告)号：US20090166773A1

公开(公告)日：2009-07-02

申请号：US12318243

申请日：2008-12-23

申请人： Hideo Ohno ,  Shoji Ikeda ,  Jun Hayakawa

发明人： Hideo Ohno ,  Shoji Ikeda ,  Jun Hayakawa

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228

摘要： Provided is a reliable nonvolatile memory with a lower power consumption. A ferromagnetic interconnection which is magnetized antiparallel or parallel to a magnetization direction of a ferromagnetic pinned layer in a giant magnetoresistive device or a tunnel magnetoresistive device constituting the magnetic memory cell, is connected to a ferromagnetic free layer with a non-magnetic layer being interposed in between, the ferromagnetic free layer serving as a recording layer. Thereby, the magnetization of the recording layer is switched by use of a spin transfer torque.

摘要翻译： 提供了具有较低功耗的可靠的非易失性存储器。 在构成磁存储单元的巨磁电阻器件或隧道磁阻器件中被磁化反并联或平行于铁磁性钉扎层的磁化方向的铁磁互连连接到铁磁自由层，其中非磁性层插入 作为记录层的铁磁自由层之间。 由此，通过使用自旋转移转矩来切换记录层的磁化。

公开(公告)号：US07468542B2

公开(公告)日：2008-12-23

申请号：US11493892

申请日：2006-07-27

申请人： Jun Hayakawa ,  Hideo Ohno ,  Shoji Ikeda

发明人： Jun Hayakawa ,  Hideo Ohno ,  Shoji Ikeda

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01L43/10

摘要： A fast and very low-power-consuming nonvolatile memory. A nonvolatile magnetic memory includes a high-output tunnel magnetoresistive device, in which spin-transfer torque is used for writing. A tunnel magnetoresistive device has a structure such that a ferromagnetic film of a body-centered cubic structure containing Co, Fe, and B, a MgO insulator film of a rock-salt structure oriented in (100), and a ferromagnetic film are stacked.

摘要翻译： 快速且功耗非常低的非易失性存储器。 非易失性磁存储器包括高输出隧道磁阻器件，其中使用自旋转移转矩来进行写入。 隧道磁阻器件具有这样的结构，使得包含Co，Fe和B的体心立方结构的铁磁膜，（100）中取向的岩盐结构的MgO绝缘膜和铁磁膜被堆叠。

公开(公告)号：US20070253118A1

公开(公告)日：2007-11-01

申请号：US11739956

申请日：2007-04-25

申请人： Jun Hayakawa ,  Hideo Ohno ,  Shoji Ikeda ,  Young Lee

发明人： Jun Hayakawa ,  Hideo Ohno ,  Shoji Ikeda ,  Young Lee

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： H01F10/3254 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3272 ,  H01L27/228 ,  H01L43/08

摘要： Provided is a high-speed, super-low-power-consumption nonvolatile memory with a high thermal stability. A nonvolatile magnetic memory is equipped with high-output tunnel magnetic resistance devices to each of which a free layer with a high thermal stability is applied, while a writing method by spin transfer torque is applied to the memory. The tunnel magnetic resistance device has a free layer including a first ferromagnetic film and the second ferromagnetic film each of which has a body center cubic structure and each of which contains Co, Fe and B. The free layer, additionally, includes a first non-magnetic layer. The tunnel magnetic resistance device has a layered structure formed of the free layer and a pinned layer with a MgO insulating film with a (100) orientation rock-salt structure interposed in between.

摘要翻译： 提供了具有高热稳定性的高速，超低功耗的非易失性存储器。 非易失性磁存储器配备有高输出隧道磁阻装置，其中每个具有高热稳定性的自由层被施加，而通过自旋转矩扭矩的写入方法被施加到存储器。 隧道磁阻装置具有包含第一铁磁膜和第二铁磁膜的自由层，每个具有体中心立方结构，并且每一个都包含Co，Fe和B.另外，自由层包括第一非磁性膜， 磁性层。 隧道磁阻装置具有由自由层和具有介于其间的具有（100）取向岩盐结构的MgO绝缘膜的钉扎层形成的层状结构。